SI4804.pdf

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Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (
)
I D (A)
30
0.022 @ V GS = 10 V
7.5
0.030 @ V GS = 4.5 V
6.5
D 1 D 1
D 2 D 2
SO-8
S 1
1
8
D 1
G 1
2
3
7
D 1
S 2
6
D 2
G 1
G 2
G 2
4
5
D 2
Top View
Ordering Information: Si4804DY
Si4804DY-T1 (with Tape and Reel)
S 1
S 2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
20
T A = 25
C
7.5
5.7
Continuous Drain Current (T J = 150
C) a
I D
T A = 70
C
6.0
4.6
A
Pulsed Drain Current
I DM
20
Continuous Source Current (Diode Conduction) a
I S
1.7
0.9
A
T A = 25
C
2.0
1.1
Maximum Power Dissipation a
P D
W
T A = 70
C
1.3
0.7
Operating Junction and Storage Temperature Range
T J , T stg
−55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
52
62.5
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady State
93
110
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
35
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
1
30
V
C) a
Continuous Drain Current (T J = 150
I D
Maximum Power Dissipation a
P D
W
Mi
R
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Si4804DY
Vishay Siliconix
SPECIFICATIONS (T J = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
0.8
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
A
V DS = 30 V, V GS = 0 V, T J = 55
C
5
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
20
A
V GS = 10 V, I D = 7.5 A
0.018
0.022
Drain-Source On-State Resistance a
r DS(on)
0.030
V GS = 4.5 V, I D = 6.5 A
0.024
Forward Transconductance a
g fs
V DS = 15 V, I D = 7.5 A
22
S
Diode Forward Voltage a
V SD
I S = 1.7 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
13
20
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 10 V, I D = 7.5 A
2
nC
Gate-Drain Charge
Q gd
2.7
Gate Resistance
R G
0.5
1.9
4
Turn-On Delay Time
t d(on)
8
16
Rise Time
t r
V DD = 15 V, R L = 15
10
20
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
21
40
ns
Fall Time
t f
10
20
Source-Drain Reverse Recovery Time
t rr
I F = 1.7 A, di/dt = 100 A/
s
40
80
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
V GS = 10 thru 4 V
3 V
16
16
12
12
8
8
T C = 125
C
4
2 V
4
25
C
−55
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V DS − Drain-to-Source Voltage (V)
V GS − Gate-to-Source Voltage (V)
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2
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
Zero Gate Voltage Drain Current
I DSS
A
Drain-Source On-State Resistance a
r DS(on)
V DD = 15 V, R L = 15
Notes
a. Pulse test; pulse width
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Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.040
1000
0.032
800
C iss
0.024
V GS = 4.5 V
600
V GS = 10 V
0.016
400
C oss
0.008
200
C rss
0.000
0
0
4
8
12
16
20
0
6
12
18
24
30
I D − Drain Current (A)
V DS − Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V DS = 15 V
I D = 7.5 A
V GS = 10 V
I D = 7.5 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
3
6
9
12
15
−50 −25
0
25
50
75
100 125 150
Q g − Total Gate Charge (nC)
T J − Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.04
T J = 150
C
I D = 7.5 A
10
0.03
0.02
T J = 25
C
0.01
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD − Source-to-Drain Voltage (V)
V GS − Gate-to-Source Voltage (V)
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
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Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
0.2
40
I D = 250
A
−0.0
30
−0.2
20
−0.4
−0.6
10
−0.8
0
−50 −25
0
25
50
75
100 125 150
10 −3
10 −2
10 −1
1
10
100
600
T J − Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 93
C/W
3. T JM − T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 −4
10 −3
10 −2
10 −1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 −4
10 −3
10 −2
10 −1
1
10
Square Wave Pulse Duration (sec)
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Document Number: 71088
S-31989—Rev. D, 13-Oct-03
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