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Si4804DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
30
0.022 @ V
GS
= 10 V
7.5
0.030 @ V
GS
= 4.5 V
6.5
D
1
D
1
D
2
D
2
SO-8
S
1
1
8
D
1
G
1
2
3
7
D
1
S
2
6
D
2
G
1
G
2
G
2
4
5
D
2
Top View
Ordering Information: Si4804DY
Si4804DY-T1 (with Tape and Reel)
S
1
S
2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
T
A
= 25
C
7.5
5.7
Continuous Drain Current
(T
J
= 150
C)
a
I
D
T
A
= 70
C
6.0
4.6
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
A
T
A
= 25
C
2.0
1.1
Maximum Power Dissipation
a
P
D
W
T
A
= 70
C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
−55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
52
62.5
Maximum Junction-to-Ambient
a
J i tAbi
a
R
thJA
Steady State
93
110
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
35
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
1
30
V
C)
a
Continuous Drain Current
(T
J
= 150
I
D
Maximum Power Dissipation
a
P
D
W
Mi
R
Si4804DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55
C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
20
A
V
GS
= 10
V, I
D
= 7.5 A
0.018
0.022
Drain-Source On-State Resistance
a
r
DS(on)
0.030
V
GS
= 4.5 V, I
D
= 6.5 A
0.024
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 7.5 A
22
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13
20
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 7.5 A
2
nC
Gate-Drain Charge
Q
gd
2.7
Gate Resistance
R
G
0.5
1.9
4
Turn-On Delay Time
t
d(on)
8
16
Rise Time
t
r
V
DD
= 15 V, R
L
= 15
10
20
Turn-Off Delay Time
t
d(off)
I
D
1 A, V
GEN
= 10 V, R
G
= 6
21
40
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/
s
40
80
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25
C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
V
GS
= 10 thru 4 V
3 V
16
16
12
12
8
8
T
C
= 125
C
4
2 V
4
25
C
−55
C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
Zero Gate Voltage Drain Current
I
DSS
A
Drain-Source On-State Resistance
a
r
DS(on)
V
DD
= 15 V, R
L
= 15
Notes
a. Pulse test; pulse width
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25
C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.040
1000
0.032
800
C
iss
0.024
V
GS
= 4.5 V
600
V
GS
= 10 V
0.016
400
C
oss
0.008
200
C
rss
0.000
0
0
4
8
12
16
20
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
1.6
V
DS
= 15 V
I
D
= 7.5 A
V
GS
= 10 V
I
D
= 7.5 A
8
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
3
6
9
12
15
−50 −25
0
25
50
75
100 125 150
Q
g
− Total Gate Charge (nC)
T
J
− Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.04
T
J
= 150
C
I
D
= 7.5 A
10
0.03
0.02
T
J
= 25
C
0.01
1
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
www.vishay.com
3
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25
C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
50
0.2
40
I
D
= 250
A
−0.0
30
−0.2
20
−0.4
−0.6
10
−0.8
0
−50 −25
0
25
50
75
100 125 150
10
−3
10
−2
10
−1
1
10
100
600
T
J
− Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
t
1
t
2
t
1
t
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93
C/W
3. T
JM
− T
A
= P
DM
Z
thJA
(t)
Single Pulse
4. Surface Mounted
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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