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HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
[
BU808DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON
n
STMicroelectronics PREFERRED
SALESTYPE
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
n
HIGH VOLTAGE CAPABILITY ( > 1400 V )
n
HIGH DC CURRENT GAIN ( TYP. 150 )
n
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
n
3
n
LOW BASE-DRIVE REQUIREMENTS
2
DEDICATED APPLICATION NOTE AN1184
n
1
APPLICATIONS
n
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
ISOWATT218
DESCRIPTION
The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1400
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
700
V
V
EBO
Emitter-Base Voltage (I
C
=0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
<5ms)
10
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
<5ms)
6
A
P
tot
Total Dissipation at T
c
=25
o
C
52
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
June 2000
1/7
BU808DFI
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
2.4
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
=25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
=0)
V
CE
= 1400 V
400
m
A
I
EBO
Emitter Cut-off Current
(I
C
=0)
V
EB
=5V
100
mA
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
=5A
I
B
=0.5A
1.6
V
V
BE(s at)
*
Base-Emitter
Saturation Voltage
I
C
=5A
I
B
=0.5A
2.1
V
h
FE
*
DC Current Gain
I
C
=5A V
CE
=5V
I
C
=5A V
CE
=5V T
j
=100
o
C
60
20
230
INDUCTIVE LOAD
Storage Time
Fall Time
V
CC
=150V
I
C
=5A
t
s
t
f
I
B1
=0.5A
V
BEoff
=-5V
3
0.8
m
s
m
s
INDUCTIVE LOAD
Storage Time
Fall Time
V
CC
=150V
I
C
=5A
t
s
t
f
I
B1
=0.5A
V
BEoff
=-5V
2
0.8
m
s
m
T
j
=100
o
C
s
V
F
Diode Forward Voltage I
F
=5A
3
V
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
2/7
BU808DFI
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
3/7
BU808DFI
Switching Time Inductive Load at 16KHZ
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes power losses, fall time t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at both 16 KHz scanning
frequencies for choosing the optimum negative
drive. The test circuit is illustrated in figure 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
2
=
1
2
C
(
V
CEfly
)
2
w=
2
p
f
=
1
````
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
4/7
L
(
I
C
)
BU808DFI
Figure 1:
Inductive Load Switching Test Circuits.
Figure 2:
Switching Waveforms in a Deflection Circuit
5/7
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