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FEATURES
BV
DSS
= 800 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 25 mA (Max.) @ V
DS
= 800V
n Low R
DS(ON)
: 1.824 W (Typ.)
R
DS(on)
= 2.2 W
I
D
= 3 A
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V
DSS
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
800
3
1.9
20
336
3
4.5
2.0
45
0.36
V
)
Continuous Drain Current (T
C
=100
O
I
D
A
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
O
1
_
A
V
mJ
A
mJ
V/ns
W
O
O
2
O
O
1
Total Power Dissipation (T
C
=25
)
P
D
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8Ã from case for 5-seconds
W/
O
T
J
, T
STG
- 55 to +150
O
T
L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
--
--
2.78
62.5
/W
1.Gate 2. Drain 3. Source
O
Electrical Characteristics
(T
C
=25
O
unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV
DSS
DBV/DT
J
V
GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
800
--
2.0
--
--
--
--
--
0.97
--
--
--
--
--
--
--
3.5
100
-100
25
250
V
V/
O
V
GS
=0V,I
D
=250mA
I
D
=250mA See Fig 7
V
DS
=5V,I
D
=250mA
V
GS
=30V
V
GS
=-30V
V
DS
=700V
V
DS
=560V,T
C
=125
V
I
GSS
nA
I
DSS
Drain-to-Source Leakage Current
mA
O
R
DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(ÃMillerÄ) Charge
--
--
2.2
W
V
GS
=10V,I
D
=2A
*
4
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
--
--
--
--
--
--
--
--
--
--
--
2.92
1100
--
1430
130
55
50
90
190
75
68
--
--
V
DS
=50V,I
D
=2A
4
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
110
46
21
40
91
32
52
8.9
24.7
pF
ns
V
DD
=350V,I
D
=6A,
R
G
=11.5
See Fig 13
4
5
nC
V
DS
=560V,V
GS
=10V,
I
D
=6A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O
1
4
--
--
--
--
--
--
--
--
470
4.96
3
20
1.4
--
--
A
Integral reverse pn-diode
in the MOSFET
T
J
=25
V
ns
mC
,I
S
=A,V
GS
=0V
,I
F
=A
di
F
/dt=100A/ms
O
4
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS
=3A, V
DD
=50V, R
G
=27
W
, Starting T
J
=25
O
I
SD
5A, di/dt 130A/ms, V
DD
BV
DSS
, Starting T
J
=25
_
_
O
Pulse Test : Pulse Width = 250
m
s, Duty Cycle 2%
Essentially Independent of Operating Temperature
_
O
T
J
=25
_
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bott om : 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
!"#
$
%
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
m
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
#$%&'%&
()*+,
m
m
!"
Fig 11. Thermal Response
-
q
./
012&3
"+4&5%6
0
!
7-
q
./
$"
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Plik z chomika:
maciejek62
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