SSS3N90A.PDF

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FEATURES
BV DSS = 900 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 25 mA (Max.) @ V DS = 900V
n Low R DS(ON) : 4.679 W (Typ.)
R DS(on) = 6.2 W
I D = 2 A
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V DSS
Drain-to-Source Voltage
Continuous Drain Current (T C =25
900
2
1.3
12
V
)
Continuous Drain Current (T C =100
O
I D
A
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T C =25
O
I DM
V GS
E AS
I AR
E AR
dv/dt
O 1
A
V
mJ
A
mJ
V/ns
W
W/
_
O 2
286
2
3.5
1.5
35
0.28
O 1
O 1
O 3
O
)
P D
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8Ã from case for 5-seconds
O
T J , T STG
- 55 to +150
O
T L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max. Units
R q JC
R q JA
Junction-to-Case
Junction-to-Ambient
--
--
3.57
62.5
O
/W
665303512.011.png 665303512.012.png 665303512.013.png 665303512.014.png 665303512.001.png
Electrical Characteristics (T C =25
O
unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV DSS
DBV/DT J
V GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
900
--
2.0
--
--
--
--
--
1.13
--
--
--
--
--
--
--
3.5
100
-100
25
250
V
V/
O
V GS =0V,I D =250mA
I D =250mA See Fig 7
V DS =5V,I D =250mA
V GS =30V
V GS =-30V
V DS =900V
V DS =720V,T C =125
V
I GSS
nA
I DSS
Drain-to-Source Leakage Current
mA
O
R DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( ÃMillerÄ ) Charge
--
--
6.2
W
V GS =10V,I D =1A *
4
4
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
--
--
--
--
--
--
--
--
--
--
--
1.78
590
--
770
65
28
40
60
105
60
37
--
--
V DS =50V,I D =1A
V GS =0V,V DS =25V,f =1MHz
See Fig 5
55
22
16
26
47
24
28
5.5
11.9
pF
ns
V DD =450V,I D =3A,
R G =16W
See Fig 13
4
5
nC
V DS =720V,V GS =10V,
I D =3A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O 1
--
--
--
--
--
--
--
--
380
1.9
2
12
1.4
--
--
A
Integral reverse pn-diode
in the MOSFET
T J =25
V
ns
mC
O
,I S =2A,V GS =0V
,I F =3A
di F /dt=100A/ms
O
4
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=135mH, I AS =2A, V DD =50V, R G =27W, Starting T J =25
O
I SD 3A, di/dt90A/ms, V DD BV DSS , Starting T J =25
_
_
_
O
Pulse Test : Pulse Width = 250ms, Duty Cycle 2%
Essentially Independent of Operating Temperature
_
T J =25
665303512.002.png
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bott om : 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
$
!"#
% &
665303512.003.png
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
m
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
"#$%&$%
'()*+
m
m
!
Fig 11. Thermal Response
, q -. /01%2
!*3%4$5 /
6, q -.
#!
665303512.004.png 665303512.005.png
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
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