VN770K.pdf

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VN770K
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
®
TYPE
R DS(on)
I OUT
V CC
VN770K
220m
W
(*)
9A (**)
36V
(*) Total resistance of one side in bridge configuration
(**) Typical current limitation value
n SUITED AS LOW VOLTAGE BRIDGE
n LINEAR CURRENT LIMITATION
n VERY LOW STAND-BY POWER DISSIPATION
n SHORT CIRCUIT PROTECTED
n STATUS FLAG DIAGNOSTIC (OPEN DRAIN)
n INTEGRATED CLAMPING CIRCUITS
n UNDERVOLTAGE PROTECTION
n ESD PROTECTION
SO-28
DESCRIPTION
The VN770K is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using | STMicroelectronics
VIPower ™ M0-3 Technology. This device is
suitable to drive a DC motor in a bridge
configuration as well as to be used as a quad
switch for any low voltage application. The dual
high side switches have built-in thermal shutdown
to protect the chips from overtemperature and
current limiter blocks to protect the device from
short circuit. Status output is provided to indicate
open load in off and on state and overtemperature.
The low side switches are two OMNIFET II types
(fully autoprotected Power MOSFET in VIPower™
technology). They have built-in thermal shutdown,
linear current limitation and overvoltage clamping.
Fault feedback for thermal intervention can be
detected by monitoring the voltage at the input pin.
PIN FUNCTION
No
NAME
FUNCTION
1, 3, 25, 28
DRAIN 3
Drain of Switch 3 (low-side switch)
2
INPUT 3
Input of Switch 3 (low-side switch)
4, 11
N.C.
Not Connected
5, 10, 19, 24
V CC
Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage
6
GND
Ground of Switches 1 and 2 (high-side switches)
7
INPUT 1
Input of Switch 1 (high-side switches)
8
DIAGNOSTIC
Diagnostic of Switches 1 and 2 (high-side switches)
9
INPUT 2
Input of Switch 2 (high-side switch)
12, 14, 15, 18
DRAIN 4
Drain of switch 4 (low-side switch)
13
INPUT 4
Input of Switch 4 (low-side switch)
16, 17
SOURCE 4
Source of Switch 4 (low-side switch)
20, 21
SOURCE 2
Source of Switch 2 (high-side switch)
22, 23
SOURCE 1
Source of Switch 1 (high-side switch)
26, 27
SOURCE 3
Source of Switch 3 (low-side switch)
December 2002
1/20
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VN770K
BLOCK DIAGRAM
V cc
V cc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND
CLAMP 1
SOURCE1
INPUT1
DRIVER 1
CLAMP 2
DIAG
CURRENT LIMITER 1
DRIVER 2
LOGIC
SOURCE2
OVERTEMP. 1
OPENLOAD ON 1
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 1
OPENLOAD ON 2
OPENLOAD OFF 2
OVERTEMP. 2
Overvoltage
DRAIN3
Clamp
Gate
INPUT3
Control
SOURCE3
Linear
Current
Limiter
Over
Temperature
Overvoltage
DRAIN4
Clamp
Gate
INPUT4
Control
SOURCE4
Linear
Current
Limiter
Over
Temperature
2/20
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VN770K
CONNECTION DIAGRAM
THERMAL DATA
Symbol
Parameter
Value
Unit
R thj-case
Thermal Resistance Junction-case (High-side switch)
MAX
20
°C/W
R thj-case
Thermal Resistance Junction-case (Low-side switch)
MAX
20
°C/W
R thj-amb
Thermal Resistance Junction-ambient
MAX
60
°C/W
ABSOLUTE MAXIMUM RATING
DUAL HIGH SIDE SWITCH
Symbol
Parameter
Value
Unit
V CC
DC Supply Voltage
41
V
- V CC
Reverse DC Supply Voltage
- 0.3
V
- I GND
DC Reverse Ground Pin Current
- 200
mA
I OUT
DC Output Current
Internally Limited
A
- I OUT
Reverse DC Output Current
- 6
A
I IN
DC Input Current
+/- 10
mA
I stat
DC Status Current
+/- 10
mA
Electrostatic Discharge (Human Body Model: R=1.5K W;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V CC
4000
4000
5000
5000
V
V
V
V
V ESD
P tot
Power Dissipation (T C =25°C)
6
W
T j
Junction Operating Temperature
Internally Limited
°C
T c
Case Operating Temperature
- 40 to 150
°C
T stg
Storage Temperature
- 55 to 150
°C
3/20
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VN770K
ABSOLUTE MAXIMUM RATING (continued)
LOW SIDE SWITCH
Symbol
Parameter
Value
Unit
V DS
Drain-source Voltage (V IN =0V)
Internally Clamped
V
V IN
Input Voltage
Internally Clamped
V
I IN
Input Current
+/-20
mA
R IN MIN
Minimum Input Series Impedance
150
W
I D
Drain Current
Internally Limited
A
I R
Reverse DC Output Current
-10.5
A
V ESD1
Electrostatic Discharge (R=1.5K
W
, C=100pF)
4000
V
Electrostatic Discharge on output pin only
(R=330
V ESD2
16500
V
W
, C=150pF)
P tot
Power Dissipation (T C =25°C)
6
W
T j
Operating Junction Temperature
Internally limited
°C
T c
Case Operating Temperature
Internally limited
°C
T stg
Storage Temperature
-55 to 150
°C
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8V < V CC < 36V; -40°C < T j < 150°C, unless otherwise specified)
POWER OUTPUTS (Per each channel)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V CC (**)
Operating Supply Voltage
5.5
13
36
V
V USD (**)
Undervoltage Shut-down
3
4
5.5
V
V OV (**)
Overvoltage Shut-down
36
V
I OUT =1A; T j =25°C
I OUT =1A; V CC >8V
160
320
m W
m
R ON
On State Resistance
W
12
40
A
m
Off State; V CC =13V; V IN =V OUT =0V
Off State; V CC =13V; V IN =V OUT =0V;
T j =25 °C
On State; V CC =13V; V IN =5V; I OUT =0A
I S (**)
Supply Current
12
5
25
7
A
mA
m
I L(off1)
Off State Output Current
V IN =V OUT =0V
0
50
m A
I L(off2)
Off State Output Current
V IN =0V; V OUT =3.5V
-75
0
m A
I L(off3)
Off State Output Current
V IN =V OUT =0V; Vcc=13V; T j =125°C
5
m A
I L(off4)
Off State Output Current
V IN =V OUT =0V; Vcc=13V; T j =25°C
3
m A
(**) Per device
SWITCHING (V CC =13V)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
R L =13
from V IN rising edge to
V OUT =1.3V
W
t d(on)
Turn-on Delay Time
30
m
s
R L =13
from V IN falling edge to
V OUT =11.7V
W
t d(off)
Turn-off Delay Time
30
m
s
See
relative
diagram
dV OUT /
dt (on)
R L =13
from V OUT =1.3V to
V OUT =10.4V
W
Turn-on Voltage Slope
V/
m
s
See
relative
diagram
dV OUT /
dt (off)
R L =13 W from V OUT =11.7V to
V OUT =1.3V
Turn-off Voltage Slope
V/ m s
4/20
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VN770K
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
LOGIC INPUT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V IL
Input Low Level
1.25
V
I IL
Low Level Input Current
V IN = 1.25V
1
m
A
V IH
Input High Level
3.25
V
I IH
High Level Input Current
V IN = 3.25V
10
m
A
V hyst
Input Hysteresis Voltage
0.5
V
I IN = 1mA
I IN = -1mA
6
6.8
-0.7
8
V
V
V ICL
Input Clamp Voltage
STATUS PIN
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V STAT
Status Low Output Voltage
I STAT = 1.6 mA
0.5
V
I LSTAT
Status Leakage Current
Normal Operation; V STAT = 5V
10
m
A
Status Pin Input
Capacitance
C STAT
Normal Operation; V STAT = 5V
100
pF
I STAT = 1mA
I STAT = - 1mA
6
6.8
-0.7
8
V
V
V SCL
Status Clamp Voltage
PROTECTIONS
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T TSD
Shut-down Temperature
150
175
200
°C
T R
Reset Temperature
135
°C
T hyst
Thermal Hysteresis
7
15
°C
Status Delay in Overload
Conditions
T j >T TSD
t sdl
20
m
s
7
8
10
13
13
13
A
A
A
T j =125 ° C
5.5V<V CC <36V
I lim
Current limitation
Turn-off Output Clamp
Voltage
V demag
I OUT =1A; L=6mH
V CC -41
V CC -48
V CC -55
V
OPENLOAD DETECTION
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Openload ON State
Detection Threshold
I OL
V IN =5V
20
40
80
mA
Openload ON State
Detection Delay
t DOL(on)
I OUT =0A
200
m
s
Openload OFF State
Voltage Detection
Threshold
V OL
V IN =0V
1.5
2.5
3.5
V
Openload Detection Delay
at Turn Off
t DOL(off)
1000
m
s
5/20
1
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