BZA109TS_N_1.pdf

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D370
BZA109TS
9-fold ESD Transient Suppressor
Preliminary specification
File under Discrete Semiconductors, SC01
1997 Sep 08
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Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
FEATURES
DESCRIPTION
·
ESD rating > 8 kV, according to IEC1000-4-2
Monolithic silicon zener diode in a SOT339-1 package
(SO20) for 9 bit wide undershoot/overshoot clamping,
combined with fast ESD transient suppression.
·
SOT339 surface mount package
·
Common anode configuration
·
Non-clamping range 0 - 6.8 V,
negative clamping range <0.5 V,
positive clamping range >6.8 V.
APPLICATIONS
·
Computer and peripherals
·
Audio and video equipment
·
Communication systems
·
Medical equipment.
PINNING SOT339-1
book, halfpage
20
11
1
10
Top view
MBK198
Fig.1 Symbol and pinning.
Fig.2 Simplified outline.
1997 Sep 08
2
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Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
LIMITING VALUES (per diode)
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I Z
reverse current
DC; T amb =25
°
C
-
20
mA
I F
forward current
DC; T amb =25 ° C
-
100
mA
I FT
feed-through current
DC; T amb =25
°
C; note 1
-
100
mA
I FSM
peak forward current
t p = 1 ms; square wave
-
4.5
A
I ZSM
peak reverse current
t p = 1 ms; square wave
2.5
A
P tot
total power dissipation
T amb =25 ° C; note 2
-
0.95
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient; note 2
135
K/W
Note to the Limiting values and Thermal characteristics
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
ELECTRICAL CHARACTERISTICS (per diode)
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V Z
reverse voltage
I Z = 250
m
A
6.4
6.8
7.2 V
V F
forward voltage
I F = 100 mA
-
-
1.1 V
V ZSM
reverse surge voltage
t p = 1 ms; I ZSM = 2.5 A
-
-
10 V
I H
input high current
V IN = 5.25 V
-
-
0.5
m A
R Z
zener impedance
I Z = 250
m
A
-
-
100
W
S Z
temperature coefficient of V Z
-
3
-
mV/K
C D
input diode capacitance
f = 1 MHz; V R =0
-
-
200 pF
f = 1 MHz; V R = 5.25 V
-
-
100 pF
1997 Sep 08
3
°
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Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
10
2
I ZSM
(A)
P tot
(W)
1.5
1
0.5
1
0
0.1
1
10
0
50
100
150
200
t p (ms)
T S (
C)
All diodes loaded.
Fig.3 Maximum non-repetitive peak reverse
current as a function of the pulse time.
Fig.4 Power derating curve.
100
150
P ZSM
(W)
C D
(pF)
100
10
50
1
0
0.1
1
10
0
1
2
3
4
5
6
t p (ms)
V Z (V)
P ZSM =V ZSM xI ZSM ;
V ZSM is the non-repetitive peak reverse voltage at I ZSM .
T j =25
°
C; f = 1 MHz.
Fig.5 Maximum non-repetitive peak reverse
power dissipation as a function of the
pulse duration (square pulse).
Fig.6 Diode capacitance as a function of the
working voltage; typical values.
1997 Sep 08
4
°
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Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
GRAPHICAL DATA
IEC 1000-4-2 network
C Z = 150 pF; R Z =330 W
Note 1: attenuator is only used for open
socket high voltage measurements
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
Vertical Scale = 10 V/Div
Horizontal Scale = 50 n s/Div
output
GND
GND
in pu t
GND
Unclamped +1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Clamped +1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
GND
Vertical Scale = 10 V/Div
Horizontal Scale = 50 n s/Div
GND
in pu t
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
GND
output
Unclamped -1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Clamped -1 kV ESD Voltage Waveform
(IEC1000-4-2 network)
Fig.7 ESD clamping test set-up and waveforms.
1997 Sep 08
5
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