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High-speed double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAV70T
High-speed double diode
Product specification
File under Discrete Semiconductors, SC01
1997 Dec 19
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
FEATURES
DESCRIPTION
PINNING
·
Very small plastic SMD package
Two high-speed switching diodes in a
common cathode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
PIN
DESCRIPTION
·
High switching speed: max. 4 ns
1
anode 1
·
Continuous reverse voltage:
max. 75 V
2
anode 2
3
common cathode
·
Repetitive peak reverse voltage:
max. 85 V
·
Repetitive peak forward current:
max. 500 mA.
handbook, halfpage
3
3
APPLICATIONS
·
1
2
High-speed switching in e.g.
surface mounted circuits.
1
2
MAM368
Marking code:
A4.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
(unless otherwise specified)
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
T
s
=90
°
C; see Fig.2
single diode loaded
-
150
mA
both diodes loaded
-
75
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25
°
C prior to
surge; see Fig.4
t=1
m
s
-
4
A
t=1ms
-
1
A
t=1s
-
0.5
A
P
tot
total power dissipation
T
s
=90
°
C; one diode loaded
-
170
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
+150
C
1997 Dec 19
2
°
°
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
ELECTRICAL CHARACTERISTICS
T
j
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
0.715
V
I
F
= 10 mA
0.855
V
I
F
=50mA
1
V
I
F
= 150 mA
1.25
V
I
R
reverse current
see Fig.5
V
R
= 25 V
30
nA
V
R
=75V
2
m
A
V
R
= 25 V; T
j
= 150
°
C
60
m
A
V
R
= 75 V; T
j
= 150
°
C
100
m
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.6
1.5
pF
t
rr
reverse recovery time
switching from I
F
= 10 mA to I
R
=10mA;
R
L
= 100
4
ns
W
; measured at I
R
= 1 mA; see Fig.7
V
fr
forward recovery voltage
switched to I
F
= 10 mA; t
r
= 20 ns; see Fig.8 1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point one diode loaded
350
K/W
1997 Dec 19
3
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
GRAPHICAL DATA
MBK249
MBG382
300
300
handbook, halfpage
handbook, halfpage
I
F
(mA)
(1)
I
F
(mA)
(1)
(2)
(3)
200
200
(2)
100
100
0
0
0
100
T
s
(
°
C)
200
0
1
V
F
(V)
2
(1) One diode loaded.
(2) Both diodes loaded.
C; typical values.
(3) T
j
=25
°
C; maximum values.
°
Fig.2 Maximum permissible continuous forward
current per diode as a function of
soldering point temperature.
Fig.3 Forward current as a function of
forward voltage.
10
2
MBG704
handbook, full pagewidth
I
FSM
(A)
10
1
10
-
1
1
10
10
2
10
3
t
p
(
m
s)
10
4
Based on square wave currents.
T
j
=25
°
C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1997 Dec 19
4
(1) T
j
= 150
°
C; typical values.
(2) T
j
=25
Philips Semiconductors
Product specification
High-speed double diode
BAV70T
10
2
MGA885
MBG446
0.8
handbook, halfpage
I
R
( A)
C
d
(pF)
V = 75 V
R
10
0.6
max
1
75 V
0.4
1
25 V
10
0.2
typ
10
2
typ
0
0
100
o
200
0
4
8
12
16
T ( C)
j
V
R
(V)
f = 1 MHz; T
j
=25
°
C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1997 Dec 19
5
m
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