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Schottky barrier (double) diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAT54 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Mar 19
1999 May 06
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
FEATURES
PINNING
·
Low forward voltage
BAT54
PIN
·
Guard ring protected
ACS
3
·
Small plastic SMD package.
1
a
k
1
a
1
a
1
1
2
APPLICATIONS
2
n.c.
k
2
a
2
k
2
MLC360
3
k
a
1
,a
2
k
1
,k
2
k
1
,a
2
·
Ultra high-speed switching
·
Voltage clamping
Fig.3 BAT54A diode
configuration (symbol).
·
Protection circuits
·
Blocking diodes.
handbook, 2 columns
3
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
3
1
2
1
2
MLC359
Top view
MGC421
MARKING
Fig.1 Simplified outline
(SOT23) and pin
configuration.
TYPE NUMBER
MARKING
CODE
(1)
Fig.4 BAT54C diode
configuration (symbol).
BAT54
L4
*
BAT54A
L42
BAT54C
L43
3
3
BAT54S
L44
Note
1.
1
2
n.c.
MLC357
1
2
= p : Made in Hong Kong.
*
= t : Made in Malaysia.
MLC358
Fig.2 BAT54 single diode
configuration (symbol).
Fig.5 BAT54S diode
configuration (symbol).
1999 May 06
2
*
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
Per diode
V
R
continuous reverse voltage
-
30
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
£
1s;
d£
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t
p
<10ms
-
600
mA
P
tot
total power dissipation (per package)
T
amb
£
25
°
C
-
230
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
125
°
C
ELECTRICAL CHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.6
I
F
= 0.1 mA
240
mV
I
F
=1mA
320
mV
I
F
=10mA
400
mV
I
F
=30mA
500
mV
I
F
= 100 mA
800
mV
I
R
reverse current
V
R
= 25 V; see Fig.7
2
m
A
t
rr
reverse recovery time
when switched from I
F
=10mA
to I
R
= 10 mA; R
L
= 100
5
ns
W
;
measured at I
R
= 1 mA;
see Fig.9
C
d
diode capacitance
f = 1 MHz; V
R
= 1 V; see Fig.8 10
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
500
K/W
Note
1. Refer to SOT23 standard mounting conditions.
1999 May 06
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
GRAPHICAL DATA
MSA892
MSA893
10
3
I
R
3
10
handbook, halfpage
I
F
(1)
(2)
(3)
(1)
(mA)
(
m
A)
10
2
10
2
(2)
10
10
(1)
(2)
(3)
1
1
(3)
10
1
10
1
0
0.4
0.8
1.2
0
10
20
30
V
F
(V)
V (V)
R
(1) T
amb
= 125
°
C.
(2) T
amb
=85
C.
(1) T
amb
= 125
°
C.
(2) T
amb
=85
C.
(3) T
amb
=25
C.
(3) T
amb
=25
C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
15
MSA891
C
d
(pF)
handbook, halfpage
10
dI
dt
F
5
10%
t
Q
r
90%
0
I
R
0
10
20
30
t
f
V (V)
R
MRC129 - 1
f = 1 MHz; T
amb
=25
°
C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Reverse recovery definitions.
1999 May 06
4
°
°
°
°
I
F
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
E
v
M
A
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
1
max.
b
p
c
D
E
e
e
1
H
E
L
p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1999 May 06
5
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