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High-speed diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N4148; 1N4448
High-speed diodes
Product specification
Supersedes data of 1996 Sep 03
1999 May 25
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
FEATURES
DESCRIPTION
·
Hermetically sealed leaded glass
SOD27 (DO-35) package
The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
·
High switching speed: max. 4 ns
·
General application
·
Continuous reverse voltage:
max. 75 V
·
Repetitive peak reverse voltage:
max. 75 V
handbook, halfpage
k
a
·
Repetitive peak forward current:
max. 450 mA.
MAM246
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
·
High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
75
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
200
mA
I
FRM
repetitive peak forward current
-
450
mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25
°
C prior to
surge; see Fig.4
t=1
m
-
4
A
t=1ms
-
1
A
t=1s
-
0.5
A
P
tot
total power dissipation
T
amb
=25
°
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25
2
s
°
°
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
ELECTRICAL CHARACTERISTICS
T
j
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
1N4148
I
F
=10mA
-
1
V
1N4448
I
F
= 5 mA
0.62
0.72
V
I
F
= 100 mA
-
1
V
I
R
reverse current
V
R
= 20 V; see Fig.5
25
nA
V
R
= 20 V; T
j
= 150
°
C; see Fig.5
-
50
m
A
I
R
reverse current; 1N4448
V
R
= 20 V; T
j
= 100
°
C; see Fig.5
-
3
m
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
4
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
W
;
measured at I
R
= 1 mA; see Fig.7
4
ns
V
fr
forward recovery voltage
when switched from I
F
=50mA;
t
r
=
-
2.5
V
20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient lead length 10 mm; note 1
350
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
3
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
GRAPHICAL DATA
MBG451
MBG464
300
600
handbook, halfpage
handbook, halfpage
I
F
(mA)
I
F
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
100
T
amb
(
o
C)
200
0
1
V
F
(V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
C; typical values.
(3) T
j
=25
°
C; maximum values.
°
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
10
2
MBG704
handbook, full pagewidth
I
FSM
(A)
10
1
10
-
1
1
10
10
2
10
3
t
p
(
m
s)
10
4
Based on square wave currents.
T
j
=25
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
4
(1) T
j
= 175
°
C; typical values.
(2) T
j
=25
°
C prior to surge.
Philips Semiconductors
Product specification
High-speed diodes
1N4148; 1N4448
10
3
MGD290
MGD004
1.2
handbook, halfpage
I
R
handbook, halfpage
m
A)
C
d
(pF)
10
2
1.0
10
(1)
(2)
0.8
1
10
-
1
0.6
10
-
2
0.4
0
100
200
T
j
(
o
C)
0
10
20
V
R
(V)
(1) V
R
= 75 V; typical values.
(2) V
R
= 20 V; typical values.
f = 1 MHz; T
j
=25
°
C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 25
5
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