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April 2009
FDS4435BZ
P-Channel PowerTrench
®
MOSFET
-30V, -8.8A, 20m
Features
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Max r
DS(on)
= 20m
at V
GS
= -10V, I
D
= -8.8A
Max r
DS(on)
= 35m
at V
GS
= -4.5V, I
D
= -6.7A
Extended V
GSS
range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
D
D
D
D
5
4
G
D
D
6
3
S
7
2
S
D
G
S
D
8
1
S
S
S
Pin 1
SO-8
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DS
Drain to Source Voltage
-30
V
V
GS
Gate to Source Voltage
±25
V
Drain Current -Continuous T
A
= 25°C (Note 1a)
-8.8
I
D
A
-Pulsed
-50
Power Dissipation T
A
= 25°C (Note 1a)
2.5
P
D
W
Power Dissipation T
A
= 25°C (Note 1b)
1.0
E
AS
Single Pulse Avalanche Energy (Note 4)
24
mJ
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
Thermal Resistance, Junction to Case
25
JC
°C/W
R
Thermal Resistance, Junction to Ambient (Note 1a)
50
JA
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS4435BZ
FDS4435BZ
SO-8
13’’
12mm
2500units
1
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
www.fairchildsemi.com
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= -250
A, V
GS
= 0V
-30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A, referenced to 25°C
-21
mV/
°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24V, V
GS
= 0V
1
A
I
GSS
Gate to Source Leakage Current
V
GS
= ±25V, V
DS
= 0V
±10
A
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250
A
-1
-2.1
-3
V
V
GS(th
)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= -250
A, referenced to 25°C
6
mV/°C
V
GS
= -10V, I
D
= -8.8A
16
20
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -4.5V, I
D
= -6.7A
26
35
m
V
GS
= -10V, I
D
= -8.8A, T
J
= 125°C
22
28
g
FS
Forward Transconductance
V
DS
= -5V, I
D
= -8.8A
24
S
Dynamic Characteristics
C
iss
Input Capacitance
1385
1845
pF
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
C
oss
Output Capacitance
275
365
pF
C
rss
Reverse Transfer Capacitance
230
345
pF
R
g
Gate Resistance
f = 1MHz
4.5
Switching Characteristics
t
d(on)
Turn-On Delay Time
10
20
ns
V
DD
= -15V, I
D
= -8.8A,
V
GS
= -10V, R
GEN
= 6
t
r
Rise Time
6
12
ns
t
d(off)
Turn-Off Delay Time
30
48
ns
t
f
Fall Time
12
22
ns
Q
g
Total Gate Charge
V
GS
= 0V to -10V
28
40
nC
V
DD
= -15V,
I
D
= -8.8A
Q
g
Total Gate Charge
V
GS
= 0V to -5V
16
23
nC
Q
gs
Gate to Source Charge
5.2
nC
Q
gd
Gate to Drain “Miller” Charge
7.4
nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= -8.8A (Note 2)
-0.9
-1.2
V
t
rr
Reverse Recovery Time
29
44
ns
I
F
= -8.8A, di/dt = 100A/
s
Q
rr
Reverse Recovery Charge
23
35
nC
NOTES:
1. R
JA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA
is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30
s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T
J
= 25°C, L = 1mH, I
AS
= -7A, V
DD
= -30V, V
GS
= -10V
0
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
4.0
50
V
GS
= -10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
GS
= -3.5V
V
GS
= -5V
3.5
40
V
GS
= -4.5V
3.0
V
GS
= -4.5V
30
2.5
V
GS
= -4V
V
GS
= -5V
V
GS
= -4V
2.0
20
1.5
V
GS
= -3.5V
V
GS
= -10V
10
1.0
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
0.5
0
0
10
20
30
40
50
0
1
2
3
4
-I
D
, DRAIN CURRENT(A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 1.
Figure 2.
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
1.6
60
I
D
= -8.8A
V
GS
= -10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
I
D
= -8.8A
1.4
50
1.2
40
T
J
= 125
o
C
1.0
30
0.8
20
T
J
= 25
o
C
0.6
10
-75
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
o
C
(
)
T
J
, JUNCTION TEMPERATURE
-V
GS
, GATE TO SOURCE VOLTAGE (V)
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
Figure 4.
O n - R e s i s t a n c e v s G a t e t o
Source Voltage
vs Junction Temperature
50
100
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
10
40
1
V
DS
= -5V
30
0.1
T
J
= 25
o
C
T
J
= 150
o
C
20
T
J
= 150
o
C
0.01
T
J
= -55
o
C
10
0.001
T
J
= 25
o
C
T
J
=-55
o
C
0
0.0001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
S o u r c e t o D r a i n D i o d e
Forward Voltage vs Source Current
Figure 6.
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
4000
I
D
= -8.8A
C
iss
8
V
DD
= -10V
1000
6
V
DD
= -15V
V
DD
= -20V
C
oss
4
2
C
rss
f = 1MHz
V
GS
= 0V
0
100
0
5
10
15
20
25
30
0.1
1
10
30
Q
g
, GATE CHARGE(nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Gate Charge Characteristics
Figure 8.
C a p a c i t a n c e v s D r a i n
to Source Voltage
10
-4
20
V
DS
= 0V
10
-5
10
T
J
= 125
o
C
10
-6
T
J
= 25
o
C
T
J
= 125
o
C
10
-7
T
J
= 25
o
C
10
-8
1
10
-9
0.01
0.1
1
10
30
0
5
10
15
20
25
30
-V
GS
,
GATE TO SOURCE VOLTAGE(V)
t
AV
, TIME IN AVALANCHE(ms)
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
Gate Leakage Current vs Gate to
Source Voltage
100
10
8
100us
10
V
GS
= -10V
1ms
6
1
10ms
100ms
V
GS
= -4.5V
THIS AREA IS
LIMITED BY r
DS(on)
4
SINGLE PULSE
T
J
= MAX RATED
R
1s
0.1
10s
2
JA
= 125
o
C/W
T
A
=25
o
C
DC
R
JA
= 50
o
C/W
0.01
0
0.1
1
10
80
25
50
75
100
125
150
o
C
T
A
, AMBIENT TEMPERATURE
(
)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
F o r w a r d B i a s S a f e
Operating Area
F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n
Current vs Ambient Temperature
Figure 12.
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
1000
SINGLE PULSE
R
V
GS
= -10 V
JA
= 125
o
C/W
T
A
= 25
o
C
100
10
1
0.5
10
-4
10
-3
10
-2
10
-1
100
1000
1
10
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
0.01
t
1
t
2
SINGLE PULSE
R
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
JA
= 125
o
C/W
0.001
10
-4
10
-3
10
-2
10
-1
100
1000
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1
5
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