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bzx84c2v7-bzx84c51-dioz9pV
BZX84C2V7–BZX84C51
Vishay Telefunken
350 mW Surface Mount Zener Diodes
Features
Planar die construction
350 mW Power dissipation
Zener voltages from 2.7V – 51V
94 8550
Absolute Maximum Ratings
T j = 25 C
Parameter
Test Conditions
Symbol
Value
Unit
Power dissipation
on ceramic substrate
10mm x 8mm x 0.7mm
P d
350
mW
Zener current (see figures 1–3 below)
Junction and storage
temperature range
T j =T stg –55...+150 C
Maximum Thermal Resistance
T j = 25 C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on ceramic substrate 10mm x 8mm x 0.7mm
R thJA
420
K/W
Electrical Characteristics
T j = 25 C
Parameter
Test Conditions
Type
Symbol Min Typ Max Unit
Forward Voltage
I F =10 mA
V F
0.9
V
Document Number 85606
www.vishay.de FaxBack +1-408-970-5600
Rev. 1, 01-Apr-99
1 (5)
Ideally suited for automated assembly processes
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BZX84C2V7–BZX84C51
Vishay Telefunken
Type
Marking
V Z
Z ZT
@ I ZT
Z ZK
@ I ZK
T C
I R
@ V R
BZX84C...
V
mA mA
%/ C
A
V
@ I ZT
2V7
KZC
2.5 to 2.9
100
5.0
600
1.0
–0.065
20
1.0
3V0
KZD
2.8 to 3.2
100
5.0
600
1.0
–0.060
10
1.0
3V3
KZE
3.1 to 3.5
95
5.0
600
1.0
–0.055
5.0
1.0
3V6
KZF
3.4 to 3.8
95
5.0
600
1.0
–0.055
5.0
1.0
3V9
KZG
3.7 to 4.1
90
5.0
600
1.0
–0.050
3.0
1.0
4V3
KZH
4.0 to 4.6
90
5.0
600
1.0
–0.035
3.0
1.0
4V7
KZ1
4.4 to 5.0
80
5.0
500
1.0
–0.015
4.0
2.0
5V1
KZ2
4.8 to 5.4
60
5.0
480
1.0
+0.005
2.0
2.0
5V6
KZ3
5.2 to 6.0
40
5.0
400
1.0
+0.020
1.0
2.0
6V2
KZ4
5.8 to 6.6
10
5.0
150
1.0
+0.030
3.0
4.0
6V8
KZ5
6.4 to 7.2
15
5.0
80
1.0
+0.045
2.0
4.0
7V5
KZ6
7.0 to 7.9
15
5.0
80
1.0
+0.050
1.0
5.0
8V2
KZ7
7.7 to 8.7
15
5.0
80
1.0
+0.055
0.7
5.0
9V1
KZ8
8.5 to 9.6
15
5.0
100
1.0
+0.065
0.5
6.0
10
KZ9
9.4 to 10.6
20
5.0
150
1.0
+0.065
0.2
7.0
11
KY1
10.4 to 11.6
20
5.0
150
1.0
+0.070
0.1
8.0
12
KY2
11.4 to 12.7
25
5.0
150
1.0
+0.075
0.1
8.0
13
KY3
12.4 to 14.1
30
5.0
170
1.0
+0.080
0.1
8.0
15
KY4
13.8 to 15.6
30
5.0
200
1.0
+0.080
0.05
0.7V Znom
16
KY5
15.3 to 17.1
40
5.0
200
1.0
+0.090
0.05
0.7V Znom
18
KY6
16.8 to 19.1
45
5.0
225
1.0
+0.090
0.05
0.7V Znom
20
KY7
18.8 to 21.2
55
5.0
225
1.0
+0.090
0.05
0.7V Znom
22
KY8
20.8 to 23.3
55
5.0
250
1.0
+0.090
0.05
0.7V Znom
24
KY9
22.8 to 25.6
70
5.0
250
1.0
+0.090
0.05
0.7V Znom
27
KYA
25.1 to 28.9
80
2.0
300
0.5
+0.090
0.05
0.7V Znom
30
KYB
28 to 32
80
2.0
300
0.5
+0.090
0.05
0.7V Znom
33
KYC
31 to 35
80
2.0
325
0.5
+0.090
0.05
0.7V Znom
36
KYD
34 to 38
90
2.0
350
0.5
+0.090
0.05
0.7V Znom
39
KYE
37 to 41
130
2.0
350
0.5
+0.110
0.05
0.7V Znom
43
KYF
40 to 46
150
2.0
375
0.5
+0.110
0.05
0.7V Znom
47
KYG
44 to 50
170
2.0
375
0.5
+0.110
0.05
0.7V Znom
51
KYH
48 to 54
180
2.0
400
0.5
+0.110
0.05
0.7V Znom
1) Device mounted on ceramic substrate 8mmx10mmx0.7mm
2) V Z measured at I ZT using a pulse test. I Z pulse width = 5 ms. Standard voltage tolerance is 5%.
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
2 (5)
Rev. 1, 01-Apr-99
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BZX84C2V7–BZX84C51
Vishay Telefunken
Characteristics (T j = 25 C unless otherwise specified)
50
500
T j =25
°
C
C2V7
C3V9 C5V6
C3V3
C4V7
C6V8
See Note 1
40
400
C8V2
30
300
20
200
10
Test Current I z
5.0mA
100
0
0
0 1234567 890
0
100
200
15251
V Z – Z-Voltage ( V )
15254
T amb – Ambient Temperature (
C )
Figure 1. Z–Current vs. Z–Voltage
Figure 4. Total Power Dissipation vs.
Ambient Temperature
30
T j =25
°
C
C10
1000
T j =25 ° C
C12
V R = 1V
20
C15
V R = 2V
C18
100
Test Current I z
2.0mA
V R = 1V
C22
10
C27
Test Current I z
5.0mA
C33
V R = 2V
C36
0
10
10
1
100
0
10
20
30
40
V Z – Z-Voltage ( V )
15255
15252
V Z – Z-Voltage ( V )
Figure 2. Z–Current vs. Z–Voltage
Figure 5. Diode Capacitance vs. Z–Voltage
10
T j =25
°
C
C39
C47
C51
C43
8
6
4
Test Current I z
2
0
0
10 20 30 40 50 60 70 80 90 100
15253
V Z – Z-Voltage ( V )
Figure 3. Z–Current vs. Z–Voltage
Document Number 85606
www.vishay.de FaxBack +1-408-970-5600
Rev. 1, 01-Apr-99
3 (5)
°
2.0mA
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BZX84C2V7–BZX84C51
Vishay Telefunken
Dimensions in mm
top view
14370
Case: SOT23, molded plastic
Mounting position: any
Approx. weight: 0.008 grams
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85606
4 (5)
Rev. 1, 01-Apr-99
199622393.015.png 199622393.016.png
 
BZX84C2V7–BZX84C51
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85606
www.vishay.de FaxBack +1-408-970-5600
Rev. 1, 01-Apr-99
5 (5)
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