baw56.pdf

(62 KB) Pobierz

High-speed double diode

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BAW56

High-speed double diode

Product speciﬁcation

Supersedes data of 1996 Sep 17

1999 May 11

199613458.051.png

199613458.062.png

199613458.073.png

199613458.084.png

199613458.001.png

199613458.002.png

199613458.003.png

199613458.004.png

199613458.005.png

199613458.006.png

199613458.007.png

199613458.008.png

199613458.009.png

199613458.010.png

199613458.011.png

199613458.012.png

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAW56

FEATURES

DESCRIPTION

PINNING

·

Small plastic SMD package

The BAW56 consists of two

high-speed switching diodes with

common anodes, fabricated in planar

technology, and encapsulated in the

small SOT23 plastic SMD package.

PIN

DESCRIPTION

·

High switching speed: max. 4 ns

1

cathode (k1)

·

Continuous reverse voltage:

max. 75 V

2

cathode (k2)

3

common anode

·

Repetitive peak reverse voltage:

max. 85 V

·

Repetitive peak forward current:

max. 450 mA.

handbook, 4 columns

2

1

APPLICATIONS

·

2

1

High-speed switching in thick and

thin-film circuits.

3

3

Top view

MAM206

Marking code: A1p = made in Hong Kong; A1t = made in Malaysia.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

V RRM

repetitive peak reverse voltage

-

85

V

V R

continuous reverse voltage

-

75

V

I F

continuous forward current

single diode loaded; note 1;

see Fig.2

-

215

mA

double diode loaded; note 1;

see Fig.2

-

125

mA

I FRM

repetitive peak forward current

-

450

mA

I FSM

non-repetitive peak forward

current

square wave; T j =25

°

C prior to

surge; see Fig.4

t=1 m s

-

4

A

t=1ms

-

1

A

t=1s

-

0.5

A

P tot

total power dissipation

T amb =25

°

C; note 1

-

250

mW

T stg

storage temperature

- 65

+150

° C

T j

junction temperature

-

150

C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 11

2

°

199613458.013.png

199613458.014.png

199613458.015.png

199613458.016.png

199613458.017.png

199613458.018.png

199613458.019.png

199613458.020.png

199613458.021.png

199613458.022.png

199613458.023.png

199613458.024.png

199613458.025.png

199613458.026.png

199613458.027.png

199613458.028.png

199613458.029.png

199613458.030.png

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAW56

ELECTRICAL CHARACTERISTICS

T j =25 ° C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

V F

forward voltage

see Fig.3

I F = 1 mA

715

mV

I F = 10 mA

855

mV

I F =50mA

1

V

I F = 150 mA

1.25

V

I R

reverse current

see Fig.5

V R =25V

30

nA

V R =75V

1

m A

V R =25V; T j = 150

°

C

30

m

A

V R =75V; T j = 150

°

C

50

m

A

C d

diode capacitance

f = 1 MHz; V R = 0; see Fig.6

2

pF

t rr

reverse recovery time

when switched from I F = 10 mA to

I R = 10 mA; R L = 100 W ;

measured at I R = 1 mA; see Fig.7

4

ns

V fr

forward recovery voltage

when switched from I F = 10 mA;

t r = 20 ns; see Fig.8

1.75

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point

360

K/W

R th j-a

thermal resistance from junction to ambient

note 1

500

K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 11

3

199613458.031.png

199613458.032.png

199613458.033.png

199613458.034.png

199613458.035.png

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAW56

GRAPHICAL DATA

MBD033

MBG382

300

300

handbook, halfpage

I F

(mA)

I F

(mA)

(1)

(2)

(3)

200

200

single diode loaded

double diode loaded

100

100

0

0

0

1

2

0

100

T ( C)

o

200

V F (V)

amb

Device mounted on an FR4 printed-circuit board.

(1) T j = 150 ° C; typical values.

(2) T j =25 ° C; typical values.

(3) T j =25

°

C; maximum values.

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

10 2

MBG704

handbook, full pagewidth

I FSM

(A)

10

1

10 - 1

1

10

10 2

10 3

t p ( m s)

10 4

Based on square wave currents.

T j =25 ° C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 May 11

4

199613458.036.png

199613458.037.png

199613458.038.png

199613458.039.png

199613458.040.png

199613458.041.png

199613458.042.png

199613458.043.png

199613458.044.png

199613458.045.png

199613458.046.png

199613458.047.png

199613458.048.png

199613458.049.png

199613458.050.png

199613458.052.png

199613458.053.png

199613458.054.png

199613458.055.png

199613458.056.png

199613458.057.png

199613458.058.png

199613458.059.png

199613458.060.png

199613458.061.png

199613458.063.png

199613458.064.png

199613458.065.png

199613458.066.png

199613458.067.png

199613458.068.png

199613458.069.png

Philips Semiconductors

Product speciﬁcation

High-speed double diode

BAW56

MGA884

MBH191

10 5

2.5

handbook, halfpage

C d

(pF)

I R

(nA)

10 4

V = 75 V

R

2.0

1.5

10 3

max

75 V

1.0

10 2

25 V

0.5

typ

typ

10

0

0

5

10

15

20

25

0

100

o

200

T ( C)

j

V R (V)

f = 1 MHz; T j =25 ° C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 11

5

199613458.070.png

199613458.071.png

199613458.072.png

199613458.074.png

199613458.075.png

199613458.076.png

199613458.077.png

199613458.078.png

199613458.079.png

199613458.080.png

199613458.081.png

199613458.082.png

199613458.083.png

199613458.085.png

199613458.086.png

199613458.087.png

Plik z chomika:

Inne pliki z tego folderu:

bav70.pdf (86 KB)
bzv55xx.pdf (63 KB)
1N4001G.PDF (50 KB)
BA157.pdf (24 KB)
BA282.PDF (42 KB)

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin