BAS70_07S_3.pdf

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Schottky barrier double diode
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
MBD128
BAS70-07S
Schottky barrier double diode
Product specification
Supersedes data of 1998 Feb 06
1998 Jul 10
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Philips Semiconductors
Product specification
Schottky barrier double diode
BAS70-07S
FEATURES
PINNING
·
Low forward voltage
PIN
DESCRIPTION
·
Guard ring protected
1
anode (a 1 )
·
Small SMD package.
2,5
not connected
3
cathode (k 2 )
APPLICATIONS
4
anode (a 2 )
·
Ultra high-speed switching
6
cathode (k 1 )
·
Voltage clamping
·
Protection circuits
·
Blocking diodes.
654
handbook, 2 columns
14
DESCRIPTION
Planar Schottky barrier double diode
with an integrated guard ring for
stress protection.
Two separate dies are encapsulated
in a SOT363 small SMD plastic
package.
63
MBK149
123
Top view
MSA370
Marking code: 77.
Fig.1 Simplified outline (SOT363) and symbol.
1998 Jul 10
2
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Philips Semiconductors
Product specification
Schottky barrier double diode
BAS70-07S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V R
continuous reverse voltage
-
70
V
I F
continuous forward current
-
70
mA
I FRM
repetitive peak forward current
t p £
1s;
d£
0.5
-
70
mA
I FSM
non-repetitive peak forward current
t p <
10 ms
-
100
mA
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
- 65
+150
°
C
ELECTRICAL CHARACTERISTICS
T amb =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.2
I F =1mA
410
mV
I F =10mA
750
mV
I F =15mA
1
V
I R
reverse current
V R = 50 V; note 1; see Fig.3
100
nA
V R = 70 V; note 1; see Fig.3
10
m A
t
charge carrier life time (Krakauer
method)
I F =5mA
100
ps
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.5
2
pF
Note
1. Pulsed test: t p = 300 m s; d = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
416
K/W
Note
1. Refer to SOT363 standard mounting conditions.
1998 Jul 10
3
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Philips Semiconductors
Product specification
Schottky barrier double diode
BAS70-07S
GRAPHICAL DATA
MRA803
MRA805
10 2
10
2
I R
I F
(mA)
(1)
m
A)
10
10
1
(2)
1
10
1
(3)
10 1
10 2
(1)
(2) (3)
(4)
10
2
10
3
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
V (V)
F
V (V)
R
(1) T amb = 125
°
C.
(3) T amb =25 ° C.
(4) T amb =
(1) T amb = 150
°
C.
(3) T amb =25
°
C.
(2) T amb =85
°
C.
-
40
°
C.
(2) T amb =85
°
C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
10 3
MRA802
2
MRA804
r diff
C d
(pF)
1.5
10 2
1
10
0.5
1
0
10 - 1
1
10
10 2
0
20
40
60
80
I F (mA)
V (V)
R
f = 10 kHz.
f = 1 MHz.
Fig.4 Differential forward resistance as a function
of forward current; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jul 10
4
(
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Philips Semiconductors
Product specification
Schottky barrier double diode
BAS70-07S
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H E
v M A
6
5
4
Q
pin 1
index
A
A 1
1
2
3
c
1
p
w M
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max
b p
c
D
E
e
e 1
H E
L p
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
97-02-28
1998 Jul 10
5
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