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Low-voltage stabistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS17
Low-voltage stabistor
Product specification
Supersedes data of 1996 Mar 20
1999 May 31
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Philips Semiconductors
Product specification
Low-voltage stabistor
BAS17
FEATURES
PINNING
·
Low-voltage stabilization
PIN
DESCRIPTION
·
Forward voltage range:
580 to 960 mV
1
anode
2
not connected
·
Total power dissipation:
max. 250 mW.
3
cathode
APPLICATIONS
·
Low-voltage stabilization e.g.
– Bias stabilizer in class-B output
stages
– Clipping
– Clamping
– Meter protection.
handbook, halfpage
2
1
2
n.c.
1
3
3
MAM185
DESCRIPTION
Marking code: A91.
Low-voltage stabilization diode in a
small SOT23 plastic package.
Fig.1 Simplified outline (SOT23), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V R
continuous reverse voltage
-
5
V
I F
continuous forward current
-
200
mA
P tot
total power dissipation
T amb =25 ° C
-
250
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
ELECTRICAL CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
forward voltage
see Fig.2
I F = 0.1 mA
580
-
660
mV
I F = 1 mA
665
-
745
mV
I F = 5 mA
725
-
805
mV
I F = 10 mA
750
-
830
mV
I F = 100 mA
870
-
960
mV
I R
reverse current
V R =4V
-
-
5
m
A
r dif
differential resistance
I F = 0.5 mA
-
120
-
W
I F =2mA
-
80
-
W
S F
temperature coefficient
I F =1mA
-
-
1.8
-
mV/K
C d
diode capacitance
V R =0V; f=1MHz
-
-
140
pF
1999 May 31
2
°
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Philips Semiconductors
Product specification
Low-voltage stabistor
BAS17
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
330
K/W
R th j-a
thermal resistance from junction to ambient
note 1
500
K/W
Note
1. Device mounted on a FR4 printed-circuit board.
GRAPHICAL DATA
MBG517
10 2
handbook, halfpage
I F
(mA)
(1)
(2)
10
1
10 - 1
0.5
0.75
V F (V)
1.0
C.
(1) Minimum values.
(2) Maximum values.
°
Fig.2 Forward current as a function of forward
voltage.
1999 May 31
3
T j =25
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Philips Semiconductors
Product specification
Low-voltage stabistor
BAS17
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1999 May 31
4
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Philips Semiconductors
Product specification
Low-voltage stabistor
BAS17
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 31
5
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