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High-speed diode

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BAS16

High-speed diode

Product speciﬁcation

Supersedes data of 1996 Sep 10

1999 May 26

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Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS16

FEATURES

DESCRIPTION

PINNING

·

Small plastic SMD package

The BAS16 is a high-speed switching

diode fabricated in planar technology,

and encapsulated in a small SOT23

plastic SMD package.

PIN

DESCRIPTION

·

High switching speed: max. 4 ns

1

anode

·

Continuous reverse voltage:

max. 75 V

2

not connected

3

cathode

·

Repetitive peak reverse voltage:

max. 85 V

·

Repetitive peak forward current:

max. 500 mA.

handbook, halfpage

2

1

APPLICATIONS

·

2

n.c.

1

High-speed switching in hybrid

thick and thin-film circuits.

3

3

MAM185

Marking code: A6p = made in Hong Kong; A6t = made in Malaysia .

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RRM

repetitive peak reverse voltage

-

85

V

V R

continuous reverse voltage

-

75

V

I F

continuous forward current

see Fig.2; note 1

-

215

mA

I FRM

repetitive peak forward current

-

500

mA

I FSM

non-repetitive peak forward current square wave; T j =25

°

C prior to

surge; see Fig.4

t=1 m s

-

4

A

t=1ms

-

1

A

t=1s

-

0.5

A

P tot

total power dissipation

T amb =25

°

C; note 1

-

250

mW

T stg

storage temperature

- 65

+150

° C

T j

junction temperature

-

150

C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 26

2

°

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Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS16

ELECTRICAL CHARACTERISTICS

T j =25 ° C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V F

forward voltage

see Fig.3

I F = 1 mA

715

mV

I F = 10 mA

855

mV

I F =50mA

1

V

I F = 150 mA

1.25

V

I R

reverse current

see Fig.5

V R =25V

30

nA

V R =75V

1

m

A

V R =25V; T j = 150

°

C

30

m

A

V R =75V; T j = 150 ° C

50

m A

C d

diode capacitance

f = 1 MHz; V R = 0; see Fig.6

1.5

pF

t rr

reverse recovery time

when switched from I F = 10 mA to

I R = 10 mA; R L = 100

4

ns

W

; measured at

I R = 1 mA; see Fig.7

V fr

forward recovery voltage

when switched from I F = 10 mA; t r = 20 ns;

see Fig.8

1.75

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point

330

K/W

R th j-a

thermal resistance from junction to ambient note 1

500

K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 May 26

3

22885033.029.png

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS16

GRAPHICAL DATA

MSA562 -1

MBG382

250

300

handbook, halfpage

I F

(mA)

I F

(mA)

200

(1)

(2)

(3)

200

150

100

100

50

0

0

0

50

100

150

200

0

1

V F (V)

2

T amb ( o C)

C; typical values.

(2) T j =25 ° C; typical values.

(3) T j =25 ° C; maximum values.

°

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward

current as a function of ambient temperature.

Fig.3 Forward current as a function of

forward voltage.

10 2

MBG704

handbook, full pagewidth

I FSM

(A)

10

1

10 - 1

1

10

10 2

10 3

t p ( m s)

10 4

Based on square wave currents.

T j =25

C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 May 26

4

(1) T j = 150

°

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Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS16

MGA884

MBG446

10 5

0.8

handbook, halfpage

I R

(nA)

C d

(pF)

V = 75 V

R

10 4

0.6

10 3

max

75 V

0.4

10 2

25 V

0.2

typ

typ

10

0

0

100

o

200

0

4

8

12

16

T ( C)

j

V R (V)

f = 1 MHz; T j =25 ° C.

Fig.5 Reverse current as a function of

junction temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 26

5

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