BAS16W_4.pdf

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High-speed diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAS16W
High-speed diode
Product specification
Supersedes data of 1996 Sep 10
1999 May 06
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Philips Semiconductors
Product specification
High-speed diode
BAS16W
FEATURES
DESCRIPTION
PINNING
·
Very small plastic SMD package
The BAS16W is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
very small plastic SMD SOT323
package.
PIN
DESCRIPTION
·
High switching speed: max. 4 ns
1
anode
·
Continuous reverse voltage:
max. 75 V
2
not connected
3
cathode
·
Repetitive peak reverse voltage:
max. 85 V
·
Repetitive peak forward current:
max. 500 mA.
2
1
APPLICATIONS
·
2
n.c.
1
High-speed switching in e.g.
surface mounted circuits.
3
3
Top view
MAM095
Marking code: A6.
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
-
85
V
V R
continuous reverse voltage
-
75
V
I F
continuous forward current
see Fig.2; note 1
-
175
mA
I FRM
repetitive peak forward current
-
500
mA
I FSM
non-repetitive peak forward
current
square wave; T j =25
°
C prior to
surge; see Fig.4
t=1 m s
-
4
A
t=1ms
-
1
A
t=1s
-
0.5
A
P tot
total power dissipation
T amb =25
°
C; note 1
-
200
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 06
2
°
22885041.013.png
Philips Semiconductors
Product specification
High-speed diode
BAS16W
ELECTRICAL CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V F
forward voltage
see Fig.3
I F = 1 mA
715
mV
I F = 10 mA
855
mV
I F =50mA
1
V
I F = 150 mA
1.25
V
I R
reverse current
see Fig.5
V R =25V
30
nA
V R =75V
1
mA
V R =25V; T j = 150
°
C
30
mA
V R =75V; T j = 150 ° C;
50
mA
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.6
1.5
pF
t rr
reverse recovery time
when switched from I F = 10 mA to
I R = 10 mA; R L = 100
4
ns
;
measured at I R = 1 mA; see Fig.7
W
V fr
forward recovery voltage
when switched from I F = 10 mA;
t r = 20 ns; see Fig.8
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point
300
K/W
R th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 06
3
22885041.014.png
Philips Semiconductors
Product specification
High-speed diode
BAS16W
GRAPHICAL DATA
200
MGA887
MBG382
300
handbook, halfpage
I F
(mA)
I F
(mA)
(1)
(2)
(3)
200
100
100
0
0
0
100
200
0
1
2
T ( C)
amb
o
V F (V)
Device mounted on an FR4 printed-circuit board.
C; typical values.
(2) T j =25 ° C; typical values.
(3) T j =25 ° C; maximum values.
°
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
10 2
MBG704
handbook, full pagewidth
I FSM
(A)
10
1
10 - 1
1
10
10 2
10 3
t p ( m s)
10 4
Based on square wave currents.
T j =25 ° C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 06
4
(1) T j = 150
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Philips Semiconductors
Product specification
High-speed diode
BAS16W
MGA884
MBG446
10 5
0.8
handbook, halfpage
I R
(nA)
C d
(pF)
V = 75 V
R
10 4
0.6
10 3
max
75 V
0.4
10 2
25 V
0.2
typ
typ
10
0
0
100
o
200
0
4
8
12
16
T ( C)
j
V R (V)
f = 1 MHz; T j =25 ° C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 06
5
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