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High-speed diodes

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4448

High-speed diodes

Product speciﬁcation

Supersedes data of 1996 Sep 03

1999 May 25

22884341.054.png

Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4148; 1N4448

FEATURES

DESCRIPTION

·

Hermetically sealed leaded glass

SOD27 (DO-35) package

The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass SOD27

(DO-35) packages.

·

High switching speed: max. 4 ns

·

General application

·

Continuous reverse voltage:

max. 75 V

·

Repetitive peak reverse voltage:

max. 75 V

handbook, halfpage

k

a

·

Repetitive peak forward current:

max. 450 mA.

MAM246

The diodes are type branded.

APPLICATIONS

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

·

High-speed switching.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V RRM

repetitive peak reverse voltage

-

75

V

V R

continuous reverse voltage

-

75

V

I F

continuous forward current

see Fig.2; note 1

-

200

mA

I FRM

repetitive peak forward current

-

450

mA

I FSM

non-repetitive peak forward current square wave; T j =25 ° C prior to

surge; see Fig.4

t=1

m

-

4

A

t=1ms

-

1

A

t=1s

-

0.5

A

P tot

total power dissipation

T amb =25

°

C; note 1

-

500

mW

T stg

storage temperature

-

65

+200

C

T j

junction temperature

-

200

C

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1999 May 25

2

s

°

°

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Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4148; 1N4448

ELECTRICAL CHARACTERISTICS

T j =25 ° C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V F

forward voltage

see Fig.3

1N4148

I F =10mA

-

1

V

1N4448

I F = 5 mA

0.62

0.72

V

I F = 100 mA

-

1

V

I R

reverse current

V R = 20 V; see Fig.5

25

nA

V R = 20 V; T j = 150 ° C; see Fig.5

-

50

m A

I R

reverse current; 1N4448

V R = 20 V; T j = 100

°

C; see Fig.5

-

3

m

A

C d

diode capacitance

f = 1 MHz; V R = 0; see Fig.6

4

pF

t rr

reverse recovery time

when switched from I F = 10 mA to

I R = 60 mA; R L = 100 W ;

measured at I R = 1 mA; see Fig.7

4

ns

V fr

forward recovery voltage

when switched from I F =50mA;

t r =

-

2.5

V

20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-tp

thermal resistance from junction to tie-point lead length 10 mm

240

K/W

R th j-a

thermal resistance from junction to ambient lead length 10 mm; note 1

350

K/W

Note

1. Device mounted on a printed circuit-board without metallization pad.

1999 May 25

3

22884341.018.png

Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4148; 1N4448

GRAPHICAL DATA

MBG451

MBG464

300

600

handbook, halfpage

handbook, halfpage

I F

(mA)

I F

(mA)

200

400

(1)

(2)

(3)

100

200

0

0

0

100

T amb ( o C)

200

0

1

V F (V)

2

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

C; typical values.

(3) T j =25 ° C; maximum values.

°

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

Fig.3 Forward current as a function of forward

voltage.

10 2

MBG704

handbook, full pagewidth

I FSM

(A)

10

1

10 - 1

1

10

10 2

10 3

t p ( m s)

10 4

Based on square wave currents.

T j =25

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 May 25

4

(1) T j = 175 ° C; typical values.

(2) T j =25

°

C prior to surge.

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Philips Semiconductors

Product speciﬁcation

High-speed diodes

1N4148; 1N4448

10 3

MGD290

MGD004

1.2

handbook, halfpage

I R

handbook, halfpage

m

A)

C d

(pF)

10 2

1.0

10

(1)

(2)

0.8

1

10 - 1

0.6

10 - 2

0.4

0

100

200

T j ( o C)

0

10

20

V R (V)

(1) V R = 75 V; typical values.

(2) V R = 20 V; typical values.

f = 1 MHz; T j =25 ° C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 May 25

5

(

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