bav70.pdf

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Genesys
BAV 70
Silicon Switching Diode Array
For high-speed switching applications
3
Common cathode
2
1
VPS05161
3
1
2
EHA07004
Type
Marking
Pin Configuration
Package
BAV 70
A4s
1 = A1
2 = A2
3 = C1/2
SOT-23
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Diode reverse voltage
V R
70
Peak reverse voltage
V RM
I F
70
Forward current
200
mA
Surge forward current, t = 1
µ
s
I FS
4.5
A
Total power dissipation, T S = 35 °C
P tot
250
mW
Junction temperature
T j
150
°C
Storage temperature
T stg
-65 ... 150
Thermal Resistance
Junction - ambient 1)
R thJA
R thJS
600
K/W
Junction - soldering point
460
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
1
Oct-07-1999
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BAV 70
Electrical Characteristics at T A = 25°C, unless o therwise specified.
Parameter
Symbol
Values
Unit
min.
typ. max.
DC characteristics
Breakdown voltage
I (BR) = 100 µA
V (BR)
70
-
-
V
Forward voltage
I F = 1 mA
I F = 10 mA
I F = 50 mA
I F = 150 mA
V F
715
855
1000
1250
mV
-
-
-
-
-
-
-
-
Reverse current
V R = 70 V
I R
-
-
2.5
µA
Reverse current
V R = 25 V, T A = 150 °C
V R = 75 V
I R
30
50
-
-
-
-
AC characteristics
Diode capacitance
V R = 0 V, f = 1 MHz
C D
-
-
1.5
pF
Reverse recovery time
I F = 10 mA, I R = 10 mA, R L = 100
t rr
-
-
6
ns
,
measured at I R = 1mA
Test circuit for reverse recovery time
D.U.T.
Ι F
Oscillograph
EHN00019
Pulse generator: t p = 100ns, D = 0.05,
t r = 0.6ns, R i = 50
Oscillograph: R = 50
, t r = 0.35ns,
C
1pF
2
Oct-07-1999
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BAV 70
Forward current I F = f ( T A *; T S )
* Package mounted on epoxy
Reverse current I R = f ( T A )
300
BAV 70
EHB00064
5
BAV 70
EHB00065
10
nA
Ι F
Ι R
mA
V
= 70 V
10
4
R
200
5
max.
10
3
70V
25V
T A
T
5
100
typ.
10
2
5
0
10
1
0
50
100
˚C 150
0
50
100
˚C
150
T ; T S
T A
Forward current I F = f ( V F )
T A = 25°C
Peak forward current I FM = f ( t p )
T A = 25°C
150
BAV 70
EHB00066
10
2
BAV 70
EHB00067
Ι
Ι FM
D
= 0.005
A
F
mA
0.01
0.02
0.05
10
1
0.1
0.2
100
typ
max
10
0
50
10 -1
t
p
D
=
t
p
T
T
10 -2
0
0
0.5
1.0
V 1.5
10 -6
10
-5
10
-4
10
-3
10
-2
10
-1
s
10
0
V
F
t
3
Oct-07-1999
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BAV 70
Forward voltage V F = f ( T A )
1.0
BAV 70
EHB00068
V F
V
Ι F = 100 mA
10 mA
0.5
1 mA
0.1 mA
0
0
50
100
˚C
150
T A
4
Oct-07-1999
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