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MAC97A8; MAC97A6 Logic level triac
MAC97A8; MAC97A6
Logic level triac
Rev. 01 — 29 March 2001
Product specification
M3D186
1. Description
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
Product availability:
MAC97A8 in SOT54 (TO-92)
MAC97A6 in SOT54 (TO-92) available on request - contact your sales
representative.
2. Features
n
Blocking voltage to 600 V (MAC97A8)
n
RMS on-state current to 0.6 A
n
Sensitive gate in all four quadrants
n
Low cost package.
3. Applications
c
c
n
General purpose bidirectional switching
n
Phase control applications
n
Solid state relays.
4. Pinning information
Table 1: Pinning - SOT54 (TO-92), simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
main terminal 2
1
1
2
gate
2
3
3
main terminal 1
2
3
MBL305
MSB03
SOT54 (TO-92)
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
T
j
=25to125
°
C
-
600
V
T
j
=25to125
°
C
-
400
V
I
T(RMS)
on-state current (RMS value)
full sine wave; T
lead
£
50
C;
Figure 5
-
0.6
A
I
TSM
non-repetitive peak on-state current
-
8.0
A
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
T
j
=25to125
°
C
-
600
V
T
j
=25to125
°
C
-
400
V
I
T(RMS)
on-state current (RMS value)
full sine wave; T
lead
£
50
°
C;
Figure 5
-
0.6
A
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
=25
°
C prior to surge
t=20ms
-
8.0
A
t = 16.7 ms
-
8.8
A
I
2
t
I
2
t for fusing
t
=
10 ms
-
0.32
A
2
s
dI
T
/dt
repetitive rate of rise of on-state
current after triggering
I
TM
= 1.0 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/
m
s
T2+ G+
-
50
A/
m
s
T2+ G
-
-
50
A/
m
s
T2
-
G
-
-
50
A/
m
s
T2
-
G+
-
10
A/
m
s
I
GM
gate current (peak value)
t = 2
m
s max
-
1
A
V
GM
gate voltage (peak value)
t = 2
m
s max
5
V
P
GM
gate power (peak value)
t = 2
m
s max
-
5
W
P
G(AV)
average gate power
T
case
=80
°
C; t = 2
m
s max
-
0.1
W
T
stg
storage temperature
-
40
+150
°
C
T
j
operating junction temperature
-
40
+125
°
C
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
2 of 12
°
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-lead)
thermal resistance from junction to lead
full cycle
60
K/W
half cycle
80
K/W
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board;
lead length = 4 mm;
Figure 1
150
K/W
7.1 Transient thermal impedance
10
3
003aaa029
Z
th(j-a)
(K/W)
10
2
10
P
t
p
t
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
t
p
(s)
.
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse
duration.
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
3 of 12
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A;
Figure 8
T2+ G+
-
1
5
mA
T2+ G
-
-
2
5
mA
T2
-
G
-
-
2
5
mA
T2
-
G+
-
4
7
mA
I
L
latching current
V
D
= 12 V; I
GT
= 0.1 A;
Figure 9
T2+ G+
-
1
10
mA
T2+ G
-
-
5
10
mA
T2
-
G
-
-
1
10
mA
T2
-
G+
-
2
10
mA
I
H
holding current
V
D
= 12 V; I
GT
= 0.1 A;
Figure 10
-
1
10
mA
V
T
on-state voltage
I
T
= 0.85 A;
Figure 11
-
1.4
1.9
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A;
Figure 7
-
0.9
2
V
V
D
=V
DRM
; I
T
= 0.1 A; T
j
= 110
°
C
0.1
0.7
-
V
I
D
off-state leakage current
V
D
=V
DRM (max)
; T
j
= 110
°
C
-
3
100
m
A
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
D
= 67% of V
DM(max)
;
T
case
= 110
30
45
-
V/
m
s
C; exponential
waveform; gate open circuit;
Figure 12
°
dV
com
/dt critical rate of rise of
commutation voltage
V
D
= rated V
DRM
;T
case
=50
°
C;
-
5
-
V/
m
s
I
TM
= 0.84 A;
commutating dI/dt = 0.3 A/ms
t
gt
gate controlled turn-on
time
I
TM
= 1.0 A; V
D
=V
DRM(max)
;
I
G
= 25 mA; dI
G
/dt=5A/
m
s
-
2
-
m
s
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
4 of 12
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
003aaa036
1.2
003aaa040
10
3
I
TSM
P
tot
(W)
I
T
1
I
TSM
(A)
a
= 180
1
time
T
0.8
10
2
120
T
j
initial = 25
o
C max
90
0.6
60
0.4
30
10
0.2
0
0
0.2
0.4
0.6
0.8
1
10
-5
10
-4
10
-3
10
-2
10
-1
I
T(RMS)
(A)
t
p
(s)
a
= conduction angle
t
p
£
20 ms
Fig 2. Maximum on-state dissipation as a function of
RMS on-state current; typical values.
Fig 3. Maximum permissible non-repetitive peak
on-state current as a function of pulse width for
sinusoidal currents; typical values.
10
003aaa038
1
003aaa037
T
I
TSM
I
T(RMS)
(A)
I
TSM
(A)
8
0.8
time
T
6
T
j
initial = 25
o
C max
0.6
4
0.4
2
0.2
0
0
0
20
40
60
80
100 120 140
T
lead
(
o
C)
1
10
10
2
10
3
n
n = number of cycles at f = 50 Hz
Fig 4. Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
Fig 5. Maximum permissible RMS current as a
function of lead temperature; typical values.
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
5 of 12
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