2n6040-d.pdf

ON Semiconductor

Plastic Medium-Power

Complementary Silicon

Transistors

. . . designed for general–purpose amplifier and low–speed

switching applications.

•

2N6040

thru

2N6042

2N6043

thru

2N6045

NPN

High DC Current Gain —

h FE = 2500 (Typ) @ I C = 4.0 Adc

•

Collector–Emitter Sustaining Voltage — @ 100 mAdc —

V CEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043

= 80 Vdc (Min) — 2N6041, 2N6044

= 100 Vdc (Min) — 2N6042, 2N6045

•

Low Collector–Emitter Saturation Voltage —

V CE(sat) = 2.0 Vdc (Max) @ I C = 4.0 Adc — 2N6040,41, 2N6043,44

= 2.0 Vdc (Max) @ I C = 3.0 Adc — 2N6042, 2N6045

*ON Semiconductor Preferred Device

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80–100 VOLTS

75 WATTS

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

Symbol

2N6040

2N6043

2N6041

2N6044

2N6042

2N6045

Unit

Collector–Emitter Voltage ÎÎÎ

V CEO ÎÎÎÎ

60 ÎÎÎ

80 ÎÎÎÎ

100 ÎÎÎ

Vdc

Collector–Base Voltage ÎÎÎ

V CB ÎÎÎÎ

60 ÎÎÎ

80 ÎÎÎÎ

100 ÎÎÎ

Vdc

Emitter–Base Voltage

V EB ÎÎÎÎÎÎÎÎÎ

5.0

Vdc

Collector Current — Continuous

Peak

I C

8.0

Adc

Base Current

I B ÎÎÎÎÎÎÎÎÎ

120 ÎÎÎ

mAdc

Total Power Dissipation @ T C = 25

P D ÎÎÎÎÎÎÎÎÎ

0.60

Watts

Derate above 25

Operating and Storage Junction,

Temperature Range

T J , T stg ÎÎÎÎÎÎÎÎÎ

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol ÎÎÎÎÎÎ

Max

Unit

CASE 221A–09

TO–220AB

Thermal Resistance, Junction to Case

q JC

1.67

C/W

Thermal Resistance, Junction to Ambient ÎÎÎÎÎ

q JA

C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 3

Publication Order Number:

2N6040/D

PNP

2N6040 thru 2N6042 2N6043 thru 2N6045

T A

T C

4.0

3.0

2.0

T C

1.0

T A

0 0

100

120

140

160

T, TEMPERATURE ( ° C)

Figure 1. Power Derating

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2N6040 thru 2N6042 2N6043 thru 2N6045

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I C = 100 mAdc, I B = 0)

V CEO(sus) ÎÎÎ

Vdc

2N6040, 2N6043

2N6041, 2N6044

2N6042, 2N6045

100

—

Collector Cutoff Current

(V CE = 60 Vdc, I B = 0)

I CEO

m A

2N6040, 2N6043

—

(V CE = 80 Vdc, I B = 0)

2N6041, 2N6044

(V CE = 100 Vdc, I B = 0)

2N6042, 2N6045

Collector Cutoff Current

(V CE = 60 Vdc, V BE(off) = 1.5 Vdc)

I CEX

2N6040, 2N6043

—

200

(V CE = 80 Vdc, V BE(off) = 1.5 Vdc)

2N6041, 2N6044

(V CE = 100 Vdc, V BE(off) = 1.5 Vdc)

2N6042, 2N6045

(V CE = 60 Vdc, V BE(off) = 1.5 Vdc, T C = 150

2N6040, 2N6043

(V CE = 80 Vdc, V BE(off) = 1.5 Vdc, T C = 150

2N6041, 2N6044

(V CE = 100 Vdc, V BE(off) = 1.5 Vdc, T C = 150

2N6042, 2N6045

Collector Cutoff Current

(V CB = 60 Vdc, I E = 0)

I CBO

m A

2N6040, 2N6043

—

(V CB = 80 Vdc, I E = 0)

2N6041, 2N6044

(V CB = 100 Vdc, I E = 0)

2N6042, 2N6045

Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)

I EBO

—

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain

(I C = 4.0 Adc, V CE = 4.0 Vdc)

h FE

—

2N6040, 41, 2N6043,

1000

100

20.000

20,000

—

(I C = 3.0 Adc, V CE = 4.0 Vdc)

2N6042, 2N6045

(I C = 8.0 Adc, V CE = 4.0 Vdc)

All Types

Collector–Emitter Saturation Voltage

(I C = 4.0 Adc, I B = 16 mAdc)

V CE(sat) ÎÎÎ

Vdc

2N6040, 41, 2N6043,

—

2.0

4.0

(I C = 3.0 Adc, I B = 12 mAdc)

2N6042, 2N6045

(I C = 8.0 Adc, I B = 80 Adc)

All Types

Base–Emitter Saturation Voltage (I C = 8.0 Adc, I B = 80 mAdc)

V BE(sat) ÎÎÎ

— ÎÎÎÎ

4.5 ÎÎÎ

Vdc

Base–Emitter On Voltage (I C = 4.0 Adc, V CE = 4.0 Vdc)

V BE(on) ÎÎÎ

— ÎÎÎÎ

2.8 ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Small Signal Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz) ÎÎÎÎÎ

|h fe | ÎÎÎ

4.0 ÎÎÎÎ

— ÎÎÎ

Output Capacitance

2N6040/2N6042

C ob ÎÎÎ

—

300

200

(V CB = 10 Vdc, I E = 0, f = 0.1 MHz)

2N6043/2N6045

Small–Signal Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc, f = 1.0 kHz)

h fe

300

—

*Indicates JEDEC Registered Data.

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2N6040 thru 2N6042 2N6043 thru 2N6045

5.0

3.0

t s

V CC

-30 V

R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS

D 1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE I B 9 100 mA

MSD6100 USED BELOW I B 9 100 mA

2.0

R C

1.0

t f

SCOPE

TUT

0.7

V 2

approx

+8.0 V

R B

0.5

0.3

t r

D 1

V CC = 30 V

I C /I B = 250

I B1 = I B2

T J = 25 ° C

9 8.0 k 9 120

0.2

V 1

approx

-12 V

+4.0 V

0.1

0.07

25 m s

for t d and t r , D 1 is disconnected

and V 2 = 0

For NPN test circuit reverse all polarities and D1.

PNP

NPN

t d @ V BE(off) = 0 V

0.05

t r , t f 3 10 ns

DUTY CYCLE = 1.0%

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0

I C , COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Equivalent Circuit

Figure 3. Switching Times

1.0

0.7

D = 0.5

0.5

0.3

0.2

P (pk)

0.1

q JC (t) = r(t) q JC

q JC = 1.67 ° C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) q JC (t)

0.1

0.05

0.02

0.07

0.05

t 1

t 2

DUTY CYCLE, D = t 1 /t 2

0.03

SINGLE PULSE

0.01

0.02

0.01

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

100

200

300

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

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2N6040 thru 2N6042 2N6043 thru 2N6045

100 m s

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 150

5.0

500 m s

1.0ms

2.0

T J = 150 ° C

5.0ms

1.0

BONDING WIRE LIMITED

THERMALLY LIMITED @ T C = 25 ° C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

0.5

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk)

< 150

0.2

0.1

CURVES APPLY BELOW RATED V CEO

C. T J(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

2N6040, 2N6043

2N6041, 2N6044

2N6045

0.05

0.02

1.0

2.0 3.0

5.0

7.0

100

Figure 5. Active–Region Safe Operating Area

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

10,000

300

5000

3000

2000

1000

500

300

200

100

T J = 25 ° C

200

T C = 25 ° C

V CE = 4.0 Vdc

I C = 3.0 Adc

C ob

100

C ib

PNP

NPN

PNP

NPN

1.0

2.0

5.0

100

200

500

1000

0.1

0.2

0.5

1.0

2.0

5.0

100

f, FREQUENCY (kHz)

V R , REVERSE VOLTAGE (VOLTS)

Figure 6. Small–Signal Current Gain

Figure 7. Capacitance

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