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27C64
64K (8K x 8) CMOS EPROM
FEATURES
PACKAGE TYPES
• High speed performance
- 120 ns access time available
• CMOS Technology for low power consumption
- 20 mA Active current
- 100
DIP/SOIC
V
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
V
• 1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
PGM
NC
A8
A9
A1 1
OE
A1 0
CE
O7
O6
O5
O4
O3
PP
CC
A Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• Separate chip enable and output enable controls
• High speed “express” programming algorithm
• Organized 8K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package
- 28-pin SOIC package
- Tape and reel
• Available for the following temperature ranges
- Commercial:
m
SS
PLCC
0˚C to +70˚C
- Industrial:
-40˚C to +85˚C
A6
A5
A4
A3
A2
A1
A0
NC
O0
A8
A9
A11
NC
OE
A1 0
CE
O7
O6
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
DESCRIPTION
The Microchip Technology Inc. 27C64 is a CMOS 64K
bit (electrically) Programmable Read Only Memory.
The device is organized as 8K words by 8 bits (8K
bytes). Accessing individual bytes from an address
transition or from power-up (chip enable pin going low)
is accomplished in less than 120 ns. CMOS design and
processing enables this part to be used in systems
where reduced power consumption and high reliability
are requirements.
A complete family of packages is offered to provide the
most exibility in applications. For surface mount appli-
cations, PLCC or SOIC packaging is available. Tape
and reel packaging is also available for PLCC or SOIC
packages.
Ó
1996 Microchip Technology Inc.
DS11107L-page 1
This document was created with FrameMaker404
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27C64
1.0
ELECTRICAL CHARACTERISTICS
TABLE 1-1:
PIN FUNCTION TABLE
1.1
Maximum Ratings*
Name
Function
V
and input voltages w.r.t. V
....... -0.6V to + 7.25V
CC
SS
A0-A12
Address Inputs
V
during
programming .......................................... -0.6V to +14V
Voltage on A9 w.r.t. V
voltage w.r.t. V
PP
SS
CE
Chip Enable
OE
Output Enable
...................... -0.6V to +13.5V
SS
PGM
Program Enable
Output voltage w.r.t. V
+1.0V
Storage temperature .......................... -65˚C to +150˚C
Ambient temp. with power applied ..... -65˚C to +125˚C
............... -0.6V to V
SS
CC
V
Programming Voltage
PP
O0 - O7
Data Output
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specication is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device reliability.
V
+5V Power Supply
CC
V
Ground
SS
NC
No Connection; No Internal Connec-
tions
NU
Not Used; No External Connection Is
Allowed
TABLE 1-2:
READ OPERATION DC CHARACTERISTICS
V
= +5V (
±
10%)
CC
Commercial:
Tamb = 0˚C to +70˚C
Industrial:
Tamb = -40˚C to +85˚C
Parameter
Part*
Status
Symbol
Min
Max
Units
Conditions
Input Voltages
all
Logic "1"
Logic "0"
V
2.0
-0.5
V
+1
0.8
V
V
IH
CC
V
IL
Input Leakage
all
I
-10
10
m
AV
= 0 to V
LI
IN
CC
Output Voltages
all
Logic "1"
Logic "0"
V
2.4
V
V
I
= -400
m
A
OH
OH
V
0.45
I
= 2.1 mA
OL
OL
Output Leakage
all
I
-10
10
m
AV
= 0V to V
LO
OUT
CC
Input Capacitance
all
C
6
pF
V
= 0V; Tamb = 25
°
C;
IN
IN
f = 1 MHz
Output Capacitance
all
C
—12
pF
V
= 0V; Tamb = 25
°
C;
OUT
OUT
f = 1 MHz
Power Supply Current,
Active
C
I
TTL input
TTL input
I
20
25
mA
mA
V
;
f = 1 MHz; OE = CE = V
= 5.5V ; V
= V
CC 1
CC
PP
CC
I
;
CC 2
IL
I
= 0 mA; V
= -0.1 to 0.8V;
OUT
IL
V
= 2.0 to V
; Note 1
IH
CC
Power Supply Current,
Standby
C
I
all
TTL input
TTL input
CMOS input
I
(
)
2
3
100
mA
mA
CC
S
m
ACE = V
±
0.2V
CC
I
Read Current
all
all
Read Mode
Read Mode
I
100
V
m
A
V
V
= 5.5V
PP
PP
PP
V
Read Voltage
V
V
-0.7
PP
PP
CC
CC
* Parts: C=Commercial Temperature Range; I =Industrial Temperature Range.
Note 1:
Typical active current increases .5 mA per MHz up to operating frequency for all temperature ranges.
DS11107L-page 2
Ó
1996 Microchip Technology Inc.
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27C64
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
AC Testing Waveform:
V
= 2.4V and V
= 0.45V; V
= 2.0V V
= 0.8V
IH
IL
OH
OL
Output Load:
1 TTL Load + 100 pF
Input Rise and Fall Times:
10 ns
Ambient Temperature:
Commercial:
Tamb = 0˚C to +70˚C
Industrial:
Tamb = -40˚C to +85˚C
27C64-12
27C64-15
27C64-17
27C64-20
27C64-25
Parameter
Sym
Units
Conditions
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Address to Output Delay
t
120
150
170
200
250
ns
CE = OE = V
ACC
IL
CE to Output Delay
t
120
150
170
200
250
ns
OE = V
CE
IL
OE to Output Delay
t
— 5— 0— 0— 5— 0 s
E = V
OE
IL
CE or OE to O/P High
Impedance
t
0 00 00 00 50 0 s
OFF
Output H old fro m
Address CE or OE,
whichever occurs rst
t
0—0—0—0—0— s
OH
FIGURE 1-1:
READ WAVEFORMS
V IH
Address Valid
Address
V IL
V IH
CE
V IL
t CE(2)
V IH
OE
V IL
t OFF(1,3)
t OE(2)
t OH
V OH
Outputs
O0 - O7
High Z
High Z
Valid Output
V OL
t ACC
Note 1:
tOF F is specied for OE or CE, whichever occurs rst.
2:
OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.
3:
This parameter is sampled and is not 100% tested.
Ó
1996 Microchip Technology Inc.
DS11107L-page 3
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27C64
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25
°
C
±
5
°
C
V
= 6.5V
±
0.25V, V
= V
= 13.0V
±
0.25V
CC
PP
H
Parameter
Status
Symbol
Min
Max.
Units
Conditions
Input Voltages
Logic”1”
Logic”0”
V
2.0
-0.1
V
+1
0.8
V
V
IH
CC
V
IL
Input Leakage
I
-10
10
m
AV
= 0V to V
LI
IN
CC
Output Voltages
Logic”1”
Logic”0”
V
2.4
0.45
V
V
I
= -400
m
A
OH
OH
V
I
= 2.1 mA
OL
OL
V
Current, program & verify
I
20
mA
Note 1
CC
CC 2
V
Current, program
I
25
mA
Note 1
PP
PP 2
A9 Product Identication
V
11.5
12.5
V
H
Note 1:
V
must be applied simultaneously or before V
and removed simultaneously or after V
.
CC
PP
PP
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
for Program, Program Verify
AC Testing Waveform:
V
=2.4V and V
=0.45V; V
=2.0V; V
=0.8V
IH
IL
OH
OL
and Program Inhibit Modes
Ambient Temperature:
± 5 ° C
V CC = 6.5V ± 0.25V, V PP = V H = 13.0V ± 0.25V
Tamb=25
°
C
Parameter
Symbol
Min
Max
Units
Remarks
Address Set-Up Time
t AS
2
m s
Data Set-Up Time
t DS
2
m s
Data Hold Time
t DH
2
m s
Address Hold Time
t AH
0
m s
Float Delay (2)
t DF
0
130
ns
V CC Set-Up Time
t VCS
2
m s
Program Pulse Width (1)
t PW
95
105
m s
100 m s typical
CE Set-Up Time
t CES
2
m s
OE Set-Up Time
t OES
2
m s
PP Set-Up Time
t VPS
2
m s
Data Valid from OE
t OE
100
ns
Note 1:
For express algorithm, initial programming width tolerance is 100 m s ± 5%.
2:
This parameter is only sampled and not 100% tested. Output oat is dened as the point where data is no
longer driven (see timing diagram).
DS11107L-page 4
Ó
1996 Microchip Technology Inc.
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27C64
FIGURE 1-2:
PROGRAMMING WAVEFORMS (1)
Program
Verify
V IH
Address
Address Stable
V IL
t AS
t AH
V IH
High Z
Data
Data In Stable
Data Out Valid
V IL
t DF
(2)
t DH
t DS
13.0 V (3)
V PP
t VPS
5.0 V
6.5 V (3)
V CC
t VCS
5.0 V
V IH
CE
V IL
t CES
V IH
PGM
V IL
t OES
t PW
t OE
(2)
V IH
OE
t OPW
V IL
Notes:
(1)
(2)
(3)
The input timing reference is 0.8 V for V IL and 2.0 V for V IH .
t DF and t OE are characteristics of the device but must be accommodated by the programmer.
Vcc = 6.5 V
±
0.25 V, V PP = V H = 13.0 V
±
0.25 V for Express algorithm.
TABLE 1-6:
MODES
Operation Mode
CE
OE
PGM
V PP
A9
O0 - O7
Read
V IL
V IL
V IH
V CC
X
D OUT
Program
V IL
V IH
V IL
V H
X
D IN
Program Verify
V IL
V IL
V IH
V H
X
D OUT
Program Inhibit
V IH
X
X
V H
X
High Z
Standby
V IH
X
X
V CC
X
High Z
Output Disable
V IL
V IH
V IH
V CC
X
High Z
Identity
V IL
V IL
V IH
V CC
V H
Identity Code
X = Don’t Care
1.2
Read Mode
For Read operations, if the addresses are stable, the
add ress access time (t ACC ) is equal to the delay from
CE to output (t CE ). Data is transfer red to the output
after a delay from the falling edge of OE (t OE ).
(See Timing Diagrams and AC Characteristics)
Read Mode is accessed when
a)
the CE pin is low to power up (enable) the chip
b)
the OE pin is low to gate the data to the output
pins
Ó 1996 Microchip Technology Inc.
DS11107L-page 5
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