2SK2348.PDF

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Ordering number : EN5415A
N-Channel Silicon MOSFET
2SK2348
High-Voltage, High-Speed
Switching Applications
Features
• Low ON resistance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2348]
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
SANYO: TO-3JML
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
V DSS
1200
V
Gate-to-Source Voltage
V GSS
±30
V
Drain Current (DC)
I D
14
A
Drain Current (pulse)
I DP
PW ² 10µs, duty cycle ² 1%
28
A
Allowable Power Dissipation
P D
4.6
W
Tc=25°C
160
W
Channel Temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
D-S Breakdown Voltage
V (BR)DSS I D =1mA, V GS =0
1200
V
Zero-Gate Voltage Drain Current I DSS
V DS =1200V, V GS =0
1.0
mA
Gate-to Source Leak Current
I GSS
V GS =±30V, V DS =0
±100
nA
Cutoff Voltage
V GS(off)
V DS =10V, I D =1mA
1.5
3.5
V
Forward Transfer Admittance
|y fs |
V DS =20V, I D =7A
3.0
6.0
S
Static Drain-to-Source
R DS(on)
I D =7A, V GS =10V
1.0
1.5
½
ON-State Resistance
Input Capacitance
Ciss
V DS =20V, f=1MHz
3000
pF
Output Capacitance
Coss
V DS =20V, f=1MHz
500
pF
Reverse Transfer Capacitance
Crss
V DS =20V, f=1MHz
250 pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5415-1/4
11064415.051.png
2SK2348
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Turn-ON Delay Time
t d(on)
45
ns
Rise Time
t r
I D =7A, V GS =10V,
180
ns
Turn-OFF Delay Time
t d(off)
V DD =200V, R GS =50
½
850
ns
Fall Time
t f
230
ns
Diode Forward Voltage
V SD
I S =14A, V GS =0
1.5
V
Reverse Recovery Time
t rr
I S =14A, di/dt=100A/µs
0.75
1.5
µs
Switching Time Test Circuit
10
I D - V DS
20
I D - V DS
8
4.5V
16
6
12
5V
4V
4
8
4V
3.5V
2
4
3V
3V
0
0
4
8
12
16
20
0
0
10
20
30
40
50
Drain-to-Source Voltage, V DS – V
Drain-to-Source Voltage, V DS – V
I D - V GS
I D - Tc
25
25
V DS = 20V
V GS = 10V
Tc =-25
°
C
20
20
25
°
C
15
15
10
10
5
5
0
2
4
6
8
10
12
14
-80
-40
0
40
80
120
160
Gate-to-Source Voltage, V GS – V
Case Temperature, Tc – °C
No.5415-2/4
0
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2SK2348
4.0
V GS (off) - Tc
3
SW Time - I D
V DS = 10V
I D = 1mA
V DD = 200V
V GS = 10V
P.W. = 1
3.6
2
s
D.C.² 0.5%
m
3.2
1000
2.8
7
2.4
5
3
2.0
2
1.6
1.2
100
7
0.8
5
t d(on)
0.4
3
0
2
-80
-40
0
40
80
120
160
7
0.1
2
3
5
7
1.0
2 3
5 7
10
2 3
Case Temperature, Tc – °C
Drain Current, I D – A
2.0
R DS (on) - V GS
2.8
R DS (on) - Tc
I D =7A
Tc = 25
I D =7A
°
C
1.8
2.4
1.6
2.0
1.4
1.6
1.2
1.2
1.0
0.8
0.8
0.4
0.6
0
2
4
6
8
10
12
14
-80
0
-40
0
40
80
120
160
Gate-to-Source Voltage, V GS – V
Case Temperature, Tc – °C
3
| y f s | - I D
3
| y f s | - I D
Tc = 25°C
V DS = 20V
V GS = 10V
2
2
10
10
7
7
5
5
3
3
2
2
1.0
1.0
7
7
5
5
3
3
2
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
2
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
3
Drain Current, I D – A
Drain Current, I D – A
Ciss,Coss,Crss - V DS
A S O
2
5
V GS = 0
f = 1MHz
3
I DP
10
m
s
10000
2
I D
7
10
5
7
3
Ciss
5
3
2
2
1000
1.0
Operation in this area
is limited by R DS (on).
7
7
5
5
3
3
2
2
0.1
Tc = 25°C
Single pulse
7
100
5
0
4
8
12
16
20
24
28
32
10
2
3
5
7
100
2
3
5
7
1000
2
Drain-to-Source Voltage, V DS – V
Drain-to-Source Voltage, V DS – V
No.5415-3/4
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2SK2348
5
P D - Ta
200
P D - Tc
4.6
4
160
3
120
2
80
1
40
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta –
°
Case Temperature, Ta – °C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of July, 1997. Specifications and information herein are subject to
change without notice.
No.5415-4/4
C
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