2SK2627.PDF
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2SK2627
Ordering number:ENN6228A
N-Channel Silicon MOSFET
2SK2627
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Low Qg.
Package Dimensions
unit:mm
2128
[2SK2627]
8.2
7.8
6.2
0.6
1.0
1 2
1.0
0.3
0.6
2.54
2.54
5.08
10.0
6.0
7.8
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
P
S
C
R
U
D
V
V
D
6
V
G
V
V
G
±
V
D
C
(
I
D
5A
D
C
(
I
D
PW
£
10
m
s, duty cycle
£
1%
2
A
A
P
D
P
D
Tc=25
°
C
4
W
C
T
T
1
˚C
˚C
S
T
T
–
+
Electrical Characteristics
at Ta = 25˚C
P
S
C
R
U
m
t
m
D
B
V
V
I
D
=
V
G
=
6
V
Z
V
D
C
I
V
D
=
V
G
=
1
m
G
L
C
I
V
G
=
V
D
=
±
n
C
V
V
G
V
D
=
I
D
=
3
5
V
F
T
A
|
y
|
V
D
=
I
D
=
1
3
S
S
D
O
R
R
D
I
D
=
V
G
=
1
2
W
I
C
C
V
D
=
f
7
p
O
C
C
V
D
=
f
2
p
R
T
C
C
V
D
=
f
1
p
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-2882 No.6228–1/4
3
t
(
D
G
2SK2627
Continued from preceding page.
P
S
C
R
U
m
t
m
T
G
C
Q
V
D
=
V
G
=
I
D
=
2
n
T
D
T
d
S
s
T
C
2
n
R
T
t
r
S
s
T
C
2
n
T
D
T
d
S
s
T
C
5
n
F
T
t
f
S
s
T
C
2
n
D
F
V
V
S
=
V
G
=
0
1
V
Switching Time Test Circuit
V
DD
=200V
V
IN
15V
0V
V
IN
I
D
=2.5A
R
L
=80.0
½
D
V
OUT
PW=1
µ
s
D.C.
²
0.5%
G
2SK2627
P.G
R
GS
=50
½
S
5
I
D
- V
DS
10
I
D
- V
DS
4
8
3
6
8V
2
7V
4
1
2
7V
V
GS
=6V
V
GS
=6V
0
0
2
4
6
8
10
0
0
10
20
30
40
50
Drain-to-Source Voltage, V
DS
– V
Drain-to-Source Voltage, V
DS
–V
I
D
- V
GS
|
y
fs
| - I
D
8
10
V
DS
=10V
V
DS
=10V
7
7
Tc=-25°C
5
6
3
2
25°C
5
4
1.0
7
3
5
2
3
2
1
0
0
2
4
6
8
10
12
14
16
0.1
0.1
23
5
7
1.0
2
3
5
7
10
Gate-to-Source Voltage, V
GS
–V
Drain Current, I
D
–A
No.6228–2/4
t
t
I
S
2SK2627
3.0
R
DS(on)
- V
GS
5
R
DS(on)
- Tc
Tc=25°C
I
D
=2.5A
2.8
2.6
4
2.4
2.2
3
2.0
1.8
1.0A
2
1.6
1.4
1
1.2
1.0
0
4
8
12
16
20
24
-60
-40
-20
0
20
40
60
80
100
120
140 160
Gate-to-Source Voltage, V
GS
–V
Case Temperature, Tc – ˚C
V
GS(off)
- Tc
SW Time - I
D
6
100
V
DS
=10V
I
D
=1mA
V
DD
=200V
V
GS
=15V
7
5
5
3
t
d
(on)
4
2
3
10
7
2
5
3
1
2
-60 -40 -20
1.0
0
20
40
60
80 100
120
140
160
3
57
1.0
2
3
57
10
2
Case Temperature, Tc – ˚C
Drain Current, I
D
–A
I
F
- V
SD
2
Ciss,Coss,Crss - V
DS
3
f=1MHz
2
10
1000
Ciss
7
7
5
5
3
3
2
1.0
2
7
5
100
3
7
2
5
0.1
3
7
5
2
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0
4
8
12
16
20
24
28
32
Diode Forward Voltage, V
SD
–V
Drain-to-Source Voltage, V
DS
–V
A S O
P
D
- Tc
5
45
3
I
DP
=20A
<1µs
2
40
10
35
7
I
D
=5A
5
30
3
2
25
1.0
7
Operation in this area
is limited by R
DS
(on).
20
3
15
2
0.1
10
7
5
Tc=25°C
Single pulse
5
3
0
23 57
10
23 57
100
23 57
1000
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, V
DS
–V
Case Temperature, Tc – ˚C
No.6228–3/4
5
2
2SK2627
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
PS No.6228–4/4
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