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IRF840
Data Sheet
January 2002
8A, 500V, 0.850 Ohm, N-Channel Power
MOSFET
Features
• 8A, 500V
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
•r
DS(ON)
= 0.850
Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17425.
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
D
IRF840
TO-220AB
IRF840
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF840 Rev. B
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IRF840
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF840
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
500
V
Drain to Gate Voltage (R
GS
= 20k
Ω)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
8.0
A
T
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.1
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
32
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/
o
C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
510
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
260
o
C
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
µ
A (Figure 10)
500
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
µ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
-
-
250
µ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
8.0
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 4.4A (Figures 8, 9)
-
0.8
0.85
Ω
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
D
= 4.4A (Figure 12)
4.9
7.4
-
S
Turn-On Delay Time
t
D(ON)
V
DD
=
250V, I
D
≈
8A, R
G
= 9.1
Ω
, R
L
= 30
Ω
-
15
21
ns
MOSFET Switching Times are Essentially
Independent of Operating Temperature.
Rise Time
t
r
-
21
35
ns
Turn-Off Delay Time
t
-
50
74
ns
D(OFF)
Fall Time
t
f
-
20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 8A, V
DS
= 0.8 x Rated BV
DSS
-
42
63
nC
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
g(REF)
Gate to Source Charge
Q
gs
-
7.0
-
nC
Gate to Drain “Miller” Charge
Q
-
22
-
nC
gd
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
1225
-
pF
Output Capacitance
C
OSS
-
200
-
pF
Reverse-Transfer Capacitance
C
RSS
-
85
-
pF
Internal Drain Inductance
L
D
Measured from the
Contact Screw on Tab
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
D
L D
Internal Source Inductance
L
S
Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
-
7.5
-
nH
G
L S
S
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
Free Air Operation
-
-
62.5
o
C/W
IRF840 Rev. B
C
I
30094679.017.png 30094679.001.png
IRF840
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
D
-
-
8.0
A
Pulse Source to Drain Current (Note 3)
I
SDM
-
-
32
A
G
S
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 8.0A, V
GS
= 100A/
µ
s (Figure 13)
-
-
2.0
V
Reverse Recovery Time
rr
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/
µ
s
210
475
970
ns
Reverse Recovered Charge
Q
RR
T
J
= 25
o
C, I
SD
= 8.0A, dI
SD
/dt = 100A/
µ
s
2.0
4.6
8.2
µ
C
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
≤
300
µ
s, duty cycle
≤
DD
= 50V, starting T
J
= 25
o
C, L = 14mH, R
G = 25 Ω , peak I AS = 8A.
Typical Performance Curves Unless Otherwise Specified
1.2
10
1.0
8
0.8
6
0.6
4
0.4
0.2
2
0
0
0
50
100
150
25
50
75
100
125
150
T C , CASE TEMPERATURE ( o C)
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P DM
10 -2
SINGLE PULSE
t 1
t 2
t 2
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z
θ JC x R
θ JC + T C
10 -3
10 -5
10 -4
10 -3
10 -2
0.1
1
10
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRF840 Rev. B
t
NOTES:
2. Pulse Test: Pulse width
30094679.002.png 30094679.003.png 30094679.004.png 30094679.005.png
IRF840
Typical Performance Curves Unless Otherwise Specified (Continued)
10 2
15
V GS = 10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
10
µ
s
12
V GS = 6.0V
10
100
µ
s
9
1ms
V GS = 5.5V
6
OPERATION IN THIS
REGION IS LIMITED
BY r DS(ON)
1
10ms
3
V GS = 5.0V
T C = 25 o C
DC
V GS = 4.0V
T J = MAX RATED
SINGLE PULSE
V GS = 4.5V
0.1
0
1
10
10 2
10 3
0
50
100
150
200
250
V DS , DRAIN TO SOURCE VOLTAGE (V)
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
15
100
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
V DS
≥
50V
12
10
9
V GS = 6.0V
1
6
V GS = 5.5V
T J = 150 o C
T J = 25 o C
3
V GS = 5.0V
0.1
V GS = 4.0V
V GS = 4.5V
0
0
3
6
9
12
15
0.01
0
2
4
6
8
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
V SD , GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
10
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
3.0
s
DUTY CYCLE = 0.5% MAX
I D = 4.4A, V GS = 10V
µ
8
2.4
6
1.8
V GS = 10V
4
1.2
2
V GS = 20V
0.6
0
0
0
8
16
24
32
40
-60
-40
-20
100
T J , JUNCTION TEMPERATURE ( o C)
0
20
40
60
80
120
140
160
T C , CASE TEMPERATURE ( o C)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
IRF840 Rev. B
PULSE DURATION = 80
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IRF840
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
3000
I D = 250 µ A
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
C OSS
1.15
2400
≈ C DS + C GD
1.05
1800
C ISS
0.95
1200
C OSS
0.85
600
C RSS
0.75
-60
-40
-20
100
T J , JUNCTION TEMPERATURE ( o C)
0
20
40
60
80
120
140
160
0
1
2
5
10
2
5
10 2
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
s
DUTY CYCLE = 0.5% MAX
V DS
µ
100
12
≥
50V
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
T J = 25 o C
10
9
T J = 150 o C
T J = 150 o C
6
T J = 25 o C
1.0
3
0
0.1
0
3
6
9
12
15
0
0.3
0.6
0.9
1.2
1.5
I D , DRAIN CURRENT (A)
V SD , SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I D = 8A
16
V DS = 100V
12
V DS = 250V
8
V DS = 400V
4
0
0
12
24
36
48
60
Q g , GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRF840 Rev. B
PULSE DURATION = 80
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