BD135_137_139_3.pdf

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NPN power transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
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Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
FEATURES
PINNING
·
High current (max. 1.5 A)
PIN
DESCRIPTION
·
Low voltage (max. 80 V).
1
emitter
2
collector, connected to metal part of
mounting surface
APPLICATIONS
·
Driver stages in hi-fi amplifiers and television circuits.
3
base
DESCRIPTION
handbook, halfpage
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
2
3
1
123 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BD135
-
45
V
BD137
-
60
V
BD139
-
100
V
V CEO
collector-emitter voltage
open base
BD135
-
45
V
BD137
-
60
V
BD139
-
80
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
1.5
A
I CM
peak collector current
-
2
A
I BM
peak base current
-
1
A
P tot
total power dissipation
T mb £ 70 ° C
-
8
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 12
2
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Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R th j-mb
thermal resistance from junction to mounting base
10
K/W
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T j =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =30V
-
-
100
nA
I E = 0; V CB =30V; T j = 125
°
C
-
-
10
m
A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
-
100
nA
h FE
DC current gain
V CE = 2 V; (see Fig.2)
I C = 5 mA
40
-
-
I C = 150 mA
63
-
250
I C = 500 mA
25
-
-
DC current gain
I C = 150 mA; V CE =2V;
(see Fig.2)
BD135-10; BD137-10; BD139-10
63
-
160
BD135-16; BD137-16; BD139-16
100
-
250
V CEsat
collector-emitter saturation voltage I C = 500 mA; I B =50mA
-
-
0.5
V
V BE
base-emitter voltage
I C = 500 mA; V CE =2V
-
-
1
V
f T
transition frequency
I C = 50 mA; V CE =5V;
f = 100 MHz
-
190
-
MHz
h FE1
h FE2
DC current gain ratio of the
complementary pairs
ï
I C ï
= 150 mA;
ï
V CE ï
=2V
-
1.3
1.6
-----------
1999 Apr 12
3
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Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
MBH729
160
handbook, full pagewidth
h FE
V CE = 2 V
120
80
40
10 - 1
10 2
10 3
1
10
I C (mA)
Fig.2 DC current gain; typical values.
1999 Apr 12
4
0
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Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P 1
P
D
L 1
L
1
2
3
b p
w M
c
e 1
Q
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b p
c
D
E
e
e 1
L
L 1 (1)
max
Q
P
P 1
w
mm
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
4.58
2.29
16.5
15.3
2.54
1.5
0.9
3.2
3.0
3.9
3.6
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT32
TO-126
97-03-04
1999 Apr 12
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