BC550.PDF

(69 KB) Pobierz
11067685 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
11067685.051.png 11067685.062.png 11067685.066.png 11067685.067.png 11067685.001.png 11067685.002.png 11067685.003.png 11067685.004.png 11067685.005.png 11067685.006.png 11067685.007.png 11067685.008.png 11067685.009.png 11067685.010.png 11067685.011.png 11067685.012.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
Low noise stages in audio frequency equipment.
DESCRIPTION
handbook, halfpag 1
2
3
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
3
2
MAM182
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC549
-
30
V
BC550
-
50
V
V CEO
collector-emitter voltage
open base
BC549
-
30
V
BC550
-
45
V
I CM
peak collector current
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
h FE
DC current gain
I C = 2 mA; V CE = 5 V
200
800
f T
transition frequency
I C = 10 mA; V CE = 5 V; f = 100 MHz
100
-
MHz
1997 Jun 20
2
11067685.013.png 11067685.014.png 11067685.015.png 11067685.016.png 11067685.017.png 11067685.018.png 11067685.019.png 11067685.020.png 11067685.021.png 11067685.022.png 11067685.023.png 11067685.024.png 11067685.025.png 11067685.026.png 11067685.027.png 11067685.028.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC549
-
30
V
BC550
-
50
V
V CEO
collector-emitter voltage
open base
BC549
-
30
V
BC550
-
45
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
100
mA
I CM
peak collector current
-
200
mA
I BM
peak base current
-
200
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Jun 20
3
11067685.029.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =30V
-
-
15
nA
I E = 0; V CB =30V; T j = 150 ° C
-
-
5
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
-
100
nA
h FE
DC current gain
A; V CE =5V;
see Figs 2 and 3
m
BC549B; BC550B
-
150
-
BC549C; BC550C
-
270
-
h FE
DC current gain
I C = 2 mA; V CE =5V;
see Figs 2 and 3
BC549; BC550
200
-
800
BC549B; BC550B
200
290
450
BC549C; BC550C
420
520
800
V CEsat
collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA
-
90
250
mV
I C = 100 mA; I B =5mA
-
200
600
mV
V BEsat
base-emitter saturation voltage
I C = 10 mA; I B = 0.5 mA; note 1
-
700
-
mV
I C = 100 mA; I B = 5 mA; note 1
-
900
-
mV
V BE
base-emitter voltage
I C = 2 mA; V CE = 5 V; note 2
580
660
700
mV
I C = 10 mA; V CE = 5 V; note 2
-
-
770
mV
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
1.5
-
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
11
-
pF
f T
transition frequency
I C = 10 mA; V CE = 5 V; f = 100 MHz 100
-
-
MHz
F
noise figure
I C = 200
m
A; V CE =5V; R S =2k
W
;
-
-
4
dB
f = 10 Hz to 15.7 kHz
I C = 200 m A; V CE =5V; R S =2k W ;
f = 1 kHz; B = 200 Hz
-
-
4
dB
Notes
1. V BEsat decreases by about 1.7 mV/K with increasing temperature.
2. V BE decreases by about 2 mV/K with increasing temperature.
1997 Jun 20
4
I C =10
11067685.030.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
MBH724
300
handbook, full pagewidth
h FE
V CE = 5 V
200
100
0
10 - 2
10 - 1
10 2
10 3
1
10
I C (mA)
BC549B; BC550B.
Fig.2 DC current gain; typical values.
MBH725
600
handbook, full pagewidth
V CE = 5 V
h FE
400
200
0
10 - 2
10 - 1
10 2
10 3
1
10
I C (mA)
BC549C; BC550C.
Fig.3 DC current gain; typical values.
1997 Jun 20
5
11067685.031.png 11067685.032.png 11067685.033.png 11067685.034.png 11067685.035.png 11067685.036.png 11067685.037.png 11067685.038.png 11067685.039.png 11067685.040.png 11067685.041.png 11067685.042.png 11067685.043.png 11067685.044.png 11067685.045.png 11067685.046.png 11067685.047.png 11067685.048.png 11067685.049.png 11067685.050.png 11067685.052.png 11067685.053.png 11067685.054.png 11067685.055.png 11067685.056.png 11067685.057.png 11067685.058.png 11067685.059.png 11067685.060.png 11067685.061.png 11067685.063.png 11067685.064.png 11067685.065.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin