BC369_3.pdf

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PNP medium power transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC369
PNP medium power transistor
Product specification
Supersedes data of 1997 Feb 28
1999 Apr 26
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Philips Semiconductors
Product specification
PNP medium power transistor
BC369
FEATURES
PINNING
·
High current (max. 1 A)
PIN
DESCRIPTION
·
Low voltage (max. 20 V).
1
base
2
collector
APPLICATIONS
3
emitter
·
General purpose switching and amplification
·
Power applications such as audio output stages.
handbook, halfpag 1
2
2
3
DESCRIPTION
1
NPN medium power transistor in a TO-92; SOT54 plastic
package. PNP complement: BC368.
MAM285
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
- 32
V
V CEO
collector-emitter voltage
open base
-
-
20
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
- 1
A
I CM
peak collector current
-
- 2
A
I BM
peak base current
-
-
200
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
0.83
W
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26
2
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Philips Semiconductors
Product specification
PNP medium power transistor
BC369
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
25 V
-
-
100
nA
I E = 0; V CB =
-
25 V; T j = 150
°
C
-
-
10
m
A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
100
nA
h FE
DC current gain
I C = - 5 mA; V CE = - 10 V
50
-
I C =
-
500 mA; V CE =
-
1 V; see Fig.2 85
375
I C =
-
1 A; V CE =
-
1 V; see Fig.2
60
-
DC current gain
I C =
-
500 mA; V CE =
-
1 V; see Fig.2
BC369-16
100
250
BC369-25
160
375
V CEsat
collector-emitter saturation voltage I C =
-
1 A; I B =
-
100 mA
-
-
0.5
V
V BE
base-emitter voltage
I C =
-
5 mA; V CE =
-
10 V
-
-
0.7
V
I C = - 1 A; V CE = - 1V
-
- 1
V
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz 40
-
MHz
h FE1
h FE2
DC current gain ratio of the
complementary pairs
ï
I C ï
= 500 mA;
ï
V CE ï
=1V
-
1.6
-----------
1999 Apr 26
3
°
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Philips Semiconductors
Product specification
PNP medium power transistor
BC369
MGD845
400
handbook, full pagewidth
h FE
300
200
100
0
10 - 1
10 2
10 3
10 4
-
-
1
-
10
-
-
-
I C (mA)
V CE = - 1V.
Fig.2 DC current gain; typical values.
1999 Apr 26
4
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Philips Semiconductors
Product specification
PNP medium power transistor
BC369
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1999 Apr 26
5
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