BTA208X_SERIES_D_E_F_3.pdf

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BTA208X_SERIES_D_E_F_3
DISCRETE SEMICONDUCTORS
DATA SHEET
BTA208X series D, E and F
Three quadrant triacs guaranteed
commutation
Objective specification
October 1999
22887791.007.png
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA208X series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
SYMBOL PARAMETER
MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor control circuits
BTA208X-
600D
-
or with other highly inductive loads.
BTA208X-
600E 800E
These
devices
balance
the
BTA208X-
600F 800F
requirements
of
commutation
V DRM
Repetitive peak off-state
600
800
V
performance and gate sensitivity. The
voltages
"sensitive gate" E series and "logic level"
I T(RMS)
RMS on-state current
8
8
A
D series are intended for interfacing with
I TSM
Non-repetitive peak on-state
65
65
A
low power drivers, including micro
current
controllers.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
case isolated
12 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
-800
V DRM
Repetitive peak off-state
-
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave;
-
8
A
T hs
£
73 ˚C
I TSM
Non-repetitive peak
full sine wave;
on-state current
T j = 25 ˚C prior to
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
72
A
I 2 t
I 2 t for fusing
t = 10 ms
-
21
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 12 A; I G = 0.2 A;
100
A/
m
s
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
m
s.
October 1999
2
Rev 1.200
22887791.008.png 22887791.009.png
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA208X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
junction to heatsink
with heatsink compound
-
-
4.5
K/W
without heatsink compound
-
-
6.5
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA208X-
...D
...E
...F
I GT
Gate trigger current 2
V D = 12 V; I T = 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
-
15
20
25
mA
T2+ G-
-
-
25
30
40
mA
T2- G-
-
-
25
30
40
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
-
15
25
30
mA
V T
On-state voltage
I T = 10 A
-
1.3
1.65
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A;
0.25
0.4
-
V
T j = 125 ˚C
I D
Off-state leakage current V D = V DRM(max) ;
-
0.1
0.5
mA
T j = 125 ˚C
2 Device does not trigger in the T2-, G+ quadrant.
October 1999
3
Rev 1.200
Thermal resistance
full or half cycle
22887791.010.png 22887791.001.png 22887791.002.png
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA208X series D, E and F
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA208X-
...D
...E
...F
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ;
30
60
70
-
V/
m
s
off-state voltage
T j = 110 ˚C; exponential
waveform; gate open
circuit
dI com /dt
Critical rate of change of V DM = 400 V; T j = 110 ˚C; 1.8
3.5
4.5
-
A/ms
commutating current
I T(RMS) = 8 A;
dV com /dt = 20v/
m
s; gate
open circuit
dI com /dt
Critical rate of change of V DM = 400 V; T j = 110 ˚C; 3.5
4.5
5.5
-
A/ms
commutating current
I T(RMS) = 8 A;
dV com /dt = 0.1v/
m
s; gate
open circuit
t gt
Gate controlled turn-on
I TM = 12 A; V D = V DRM(max) ;
-
-
-
2 -
m
s
time
I G = 0.1 A; dI G /dt = 5 A/
m
s
October 1999
4
Rev 1.200
22887791.003.png
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
BTA208X series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
123
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
1.3
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1999
5
Rev 1.200
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