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TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
l 50 W at 25°C Case Temperature
SOT-93 PACKAGE
(TOP VIEW)
l 10 A Continuous Collector Current
l 15 A Peak Collector Current
B
1
l Maximum V CE(sat) of 2.8 V at I C = 6.5 A
l I CEX(sus) 7 A at rated V (BR)CEO
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I E = 0)
TIP160
TIP161
TIP162
V CBO
320
350
380
V
Collector-emitter voltage (I B = 0)
TIP160
TIP161
TIP162
V CEO
320
350
380
V
Emitter-base voltage
V EBO
5
V
Continuous collector current
I C
10
A
Peak collector current (see Note 1)
I CM
15
A
Peak commutating anti-parallel diode current (I B = 0) (see Note 2)
I EM
10
A
Continuous base current
I B
1
A
Continuous device dissipation at (or below) 100°C case temperature (see Note 3)
P tot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 4)
P tot
3
W
Operating junction temperature range
T j
-65 to +150
°C
Storage temperature range
T stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T L
260
°C
NOTES: 1. This value applies for t p £ 10 ms, duty cycle £ 10%.
2. This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter.
3. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
4. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
I CEO
Collector-emitter
cut-off current
V CE = 320 V
V CE = 350 V
V CE = 380 V
I B = 0
I B = 0
I B = 0
TIP160
TIP161
TIP162
1
mA
I CEX(sus)
Collector-emitter
sustaining current
V CLAMP = V (BR)CEO
7
A
I EBO
Emitter cut-off
current
V EB = 5 V
I C = 0
100
mA
h FE
Forward current
transfer ratio
V CE = 2.2 V
I C = 4 A
(see Notes 5 and 6)
200
V CE(sat)
Collector-emitter
saturation voltage
I B = 0.1A
I B = 1 A
I C = 6.5 A
I C = 10 A
(see Notes 5 and 6)
2.8
2.9
V
V BE(sat)
Base-emitter
saturation voltage
I B = 0.1A
I C = 6.5 A
(see Notes 5 and 6)
2.2
V
V EC
Parallel diode
forward voltage
I E = 10 A
I B = 0
(see Notes 5 and 6)
3.5
V
NOTES: 5. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN
TYP MAX
UNIT
R q JC
Junction to case thermal resistance
1
°C/W
R q JA
Junction to free air thermal resistance
41.7
°C/W
C q C
Thermal capacitance of case
1.4
J/°C
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
TYP MAX
UNIT
t d
Delay time
40
ns
t r
Rise time
I C = 6.5 A
V BE(off) = -5 V
I B(on) = 100 mA
R L = 5 W
I B(off) = -100 mA
1.5
µs
t s
Storage time
2.2
µs
t f
Fall time
2.6
µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT INFORMATION
2
199644032.010.png
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
24 V
V z
L = 7 mH
Driver and
Current
Limiting
Circuit
TUT
0.22 m F
100 W
0.2 W
Figure 1. Functional Test Circuit
16.6 ms
11.6 ms
Input
Signal
0
I B
Base
Current
0
I C
Collector
Current
0
V clamp
Collector
Emitter
Voltage
0
24 V
Figure 2. Functional Test Waveforms
40 V
12 V
0.056 W
7 mH
IRF140
BY205-600
V in
= 10 V
1 k W
TUT
V clamp
Adjust for
I B
47 W
Figure 3. Switching Test Circuit
PRODUCT INFORMATION
3
199644032.011.png 199644032.001.png 199644032.002.png 199644032.003.png
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCD160AA
TCD160AB
10000
10
T C = 125°C
T C = 25°C
T C = -30°C
I C / I B = 65
t p = 300 µs, duty cycle < 2%
1000
1·0
100
10
V CE = 2.2 V
t p = 300 µs, duty cycle < 2%
0·1
T C = 125°C
T C = 25°C
T C = -30°C
0·4
1·0
10
40
1·0
10
I C - Collector Current - A
I C - Collector Current - A
Figure 4.
Figure 5.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCD160AD
TCP160AC
4·0
3·0
I C / I B = 10
t p = 300 µs, duty cycle < 2%
I C / I B = 65
t p = 300µs, duty cycle < 2%
1·0
1·0
T C = 125°C
T C = 25°C
T C = -30°C
T C = -30°C
T C = 25°C
T C = 125°C
0·4
0·6
1·0
10
1·0
10
I C - Collector Current - A
I C - Collector Current - A
Figure 6.
Figure 7.
PRODUCT INFORMATION
4
199644032.004.png
TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAD160AA
100
T C £ 100 o C
10
1·0
DC Operation
t p = 150 ms,
d = 1%
t p = 5 ms,
d = 5%
t p = 1 ms,
d = 5%
t p = 0.1 ms,
d = 5%
0.1
0·01
TIP160
TIP161
TIP162
1·0
10
100
1000
V CE - Collector-Emitter Voltage - V
Figure 8.
PRODUCT INFORMATION
5
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