2n6547-d.pdf

ON Semiconductor

SWITCHMODE Series NPN

Silicon Power Transistors

2N6547

The 2N6547 transistor is designed for high–voltage, high–speed,

power switching in inductive circuits where fall time is critical. They

are particularly suited for 115 and 220 volt line operated switch–mode

applications such as:

•

Switching Regulators

15 AMPERE

NPN SILICON

POWER TRANSISTORS

300 and 400 VOLTS

175 WATTS

•

PWM Inverters and Motor Controls

•

Solenoid and Relay Drivers

•

Deflection Circuits

Specification Features

•

High Temperature Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

CASE 1–07

TO–204AA

(TO–3)

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO(sus)

400

Vdc

Collector–Emitter Voltage

V CEX(sus)

450

Vdc

Collector–Emitter Voltage

V CEV

850

Vdc

Emitter Base Voltage

V EB

9.0

Vdc

Collector Current — Continuous

— Peak (2)

I C

I CM

Adc

Base Current — Continuous

— Peak (2)

I B

I BM

Adc

Emitter Current — Continuous

— Peak (2)

I E

I EM

Adc

Total Power Dissipation

@ T C = 25

P D

Watts

175

100

1.0

Derate above 25

W/ C

Operating and Storage Junction Temperature Range

T J , T stg

–65 to +200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R q JC ÎÎÎÎÎÎÎÎ

1.0

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8 , from Case for 5 Seconds

T L ÎÎÎÎÎÎÎÎ

275

W Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 6

Publication Order Number:

2N6547/D

@ T C = 100

2N6547

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage

(I C = 100 mA, I B = 0)

V CEO(sus) ÎÎÎ

Vdc

2N6546

2N6547

300

400

—

Collector–Emitter Sustaining Voltage

(I C = 8.0 A, V clamp = Rated V CEX , T C = 100 C)

V CEX(sus)

Vdc

2N6546

2N6547

350

450

200

300

—

(I C = 15 A, V clamp = Rated V CEO = 100 V,

2N6546

T C = 100

2N6547

Collector Cutoff Current

(V CEV = Rated Value, V BE(off) = 1.5 Vdc)

(V CEV = Rated Value, V BE(off) = 1.5 Vdc, T C = 100

I CEV

mAdc

—

1.0

4.0

Collector Cutoff Current

(V CE = Rated V CEV , R BE = 50 W , T C = 100 C)

I CER

— ÎÎÎÎ

5.0 ÎÎÎ

mAdc

Emitter Cutoff Current

(V EB = 9.0 Vdc, I C = 0)

I EBO ÎÎÎ

— ÎÎÎÎ

1.0 ÎÎÎ

mAdc

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

t = 1.0 s (non–repetitive) (V CE = 100 Vdc)

I S/b

0.2

—

Adc

ON CHARACTERISTICS (1)

DC Current Gain

(I C = 5.0 Adc, V CE = 2.0 Vdc)

(I C = 10 Adc, V CE = 2.0 Vdc)

h FE

—

1 2

6.0

Collector–Emitter Saturation Voltage

(I C = 10 Adc, I B = 2.0 Adc)

(I C = 15 Adc, I B = 3.0 Adc)

(I C = 10 Adc, I B = 2.0 Adc, T C = 100

V CE(sat)

Vdc

—

1.5

5.0

2.5

Base–Emitter Saturation Voltage

(I C = 10 Adc, I B = 2.0 Adc)

(I C = 10 Adc, I B = 2.0 Adc, T C = 100

V BE(sat) ÎÎÎ

Vdc

—

1.6

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = 500 mAdc, V CE = 10 Vdc, f test = 1.0 MHz)

f T

6.0 ÎÎÎÎ

28 ÎÎÎ

MHz

Output Capacitance

(V CB = 10 Vdc, I E = 0, f test = 1.0 MHz)

C ob

125 ÎÎÎÎ

500 ÎÎÎ

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2N6547

SWITCHING CHARACTERISTICS

Resistive Load

Delay Time

t d

— ÎÎÎÎ

0.05 ÎÎÎ

m s

Rise Time

(V CC = 250 V, I C = 10 A,

I B1 =I B2 =20A t =100 m s

t r

— ÎÎÎÎ

1.0 ÎÎÎ

m s

I B1 = I B2 = 2.0 A, t p = 100 m s,

Duty Cycle 2.0%)

Storage Time ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Duty Cycle 2.0%)

t s

— ÎÎÎÎ

4.0 ÎÎÎ

Fall Time

t f

— ÎÎÎÎ

0.7 ÎÎÎ

m s

Inductive Load, Clamped

Storage Time ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(I C 10 A( k), V clam Rated V CEX , I B1 2.0 A,

V BE(off) = 5.0 Vdc, T C = 100

t s

— ÎÎÎÎ

5.0 ÎÎÎ

C) ÎÎÎÎÎ

Fall Time

t f

— ÎÎÎÎ

1.5 ÎÎÎ

m s

Typical

Storage Time ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(I C 10 A( k), V clam Rated V CEX , I B1 2.0 A,

V BE(off) = 5.0 Vdc, T C = 25

t s

2.0 ÎÎÎ

C) ÎÎÎÎÎ

Fall Time

t f

0.09

m s

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width = 300

s, Duty Cycle = 2%.

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(I C = 10 A(pk), V clamp = Rated V CEX , I B1 = 2.0 A,

2N6547

TYPICAL ELECTRICAL CHARACTERISTICS

100

2.0

T J = 25 ° C

T J = 150 ° C

1.6

25 ° C

1.2

I C = 2.0 A

5.0 A

10 A

15 A

0.8

-55 ° C

0.4

V CE = 2.0 V

V CE = 10 V

7.0

5.0

0.2 0.3

0.5

1.0

2.0 3.0

5.0 7.0 10

0.07

0.1

0.2 0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

I B , COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

1.4

2.5

1.2

T J = 25 ° C

2.0

*APPLIES FOR I C /I B h FE @V CE 2.0V

1.5

1.0

25 ° C to 150 ° C

V BE(sat) @ I C /I B = 5.0

* q VC for V CE(sat)

0.8

0.5

-55 ° C to 25 ° C

0.6

V BE(on) @ V CE = 2.0 V

-0.5

0.4

-1.0

-1.5

25 ° C to 150 ° C

q VB for V BE

0.2

V CE(sat) @ I C /I B = 5

-2.0

-55 ° C to 25 ° C

0.2 0.3

0.5

1.0

2.0 3.0

5.0

7.0

-2.5

0.2

0.3

0.5

0.7

1.0

2.0 3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 3. “On” Voltages

Figure 4. Temperature Coefficients

3.0 k

10 k

7.0 k

5.0 k

2.0 k

V CC = 250 V

I C /I B = 5.0

T J = 25 ° C

t r

t s

1.0 k

700

500

3.0 k

2.0 k

300

200

1.0 k

700

500

t f

V CC = 250 V

I C /I B = 5.0

I B1 = I B2

T J = 25 ° C

t d @ V BE(off) = 5.0 V

100

300

200

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

I C , COLLECTOR CURRENT (AMP)

Figure 5. Turn–On Time

Figure 6. Turn–Off Time

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2N6547

MAXIMUM RATED SAFE OPERATING AREAS

10 ms

TURN OFF LOAD LINE

BOUNDARY FOR 2N6547.

FOR 2N6546, V CEO AND

V CEX ARE 100 VOLTS LESS.

1.0 ms

5.0 ms

5.0

100 m s

2.0

1.0

V CEX(sus)

0.5

T C = 25 ° C

0.2

8.0

8.0 V

0.1

BONDING WIRE LIMITED

THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

0.05

4.0

V CEO(sus)

V CEX(sus)

V BE(off) 5 V

T C 100 ° C

0.02

2N6546

2N6547

CURVES APPLY BELOW RATED V CEO

0.01

0.005

5.0

7.0

100

200

300

400

100

200

300

400

500

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Forward Bias Safe Operating Area

Figure 8. Reverse Bias Safe Operating Area

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 7 is based on T C = 25

SECOND BREAKDOWN

DERATING

C; T J(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when T C

THERMAL DERATING

C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 7 may be found at

any case temperature by using the appropriate curve on

Figure 9.

T J(pk) may be calculated from the data in Figure 10. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

0 0

120

160

200

T C , CASE TEMPERATURE ( ° C)

Figure 9. Power Derating

1.0

0.7

0.5

0.3

0.2

D = 0.5

0.2

0.1

0.07

0.05

0.03

0.02

0.05

Z q JC (t) = r(t) R q JC

R q JC = 1.0 ° C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) Z q JC(t)

P (pk)

0.02

t 1

t 2

DUTY CYCLE, D = t 1 /t 2

0.01

SINGLE PULSE

0.01 0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

t, TIME (ms)

Figure 10. Thermal Response

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