2n6497-d.pdf

ON Semiconductor

High Voltage NPN Silicon

Power Transistors

2N6497

. . . designed for high voltage inverters, switching regulators and

line–operated amplifier applications. Especially well suited for

switching power supply applications.

•

High Collector–Emitter Sustaining Voltage –

V CEO(sus) = 250 Vdc (Min)

5 AMPERE

POWER TRANSISTORS

NPN SILICON

250 VOLT

80 WATTS

•

Excellent DC Current Gain

h FE = 10–75 @ I C = 2.5 Adc

•

Low Collector–Emitter Saturation Voltage @ I C = 2.5 Adc –

V CE(sat) = 1.0 Vdc (Max)

MAXIMUM RATINGS (1)

Rating

Symbol ÎÎÎÎÎÎÎ

Value

Unit

Collector–Emitter Voltage ÎÎÎÎÎ

V CEO ÎÎÎÎÎÎÎ

250 ÎÎÎ

Vdc

Collector–Base Voltage

V CB ÎÎÎÎÎÎÎ

350

Vdc

Emitter–Base Voltage

V EB ÎÎÎÎÎÎÎ

6.0

Vdc

CASE 221A–09

TO–220AB

Collector Current – Continuous

– Peak

I C ÎÎÎÎÎÎÎ

5.0

Adc

Base Current

I B

2.0

Adc

Total Power Dissipation @ T C = 25 C

Derate above 25 C

P D

0.64

Watts

W/ C

Operating and Storage Junction

Temperature Range

T J ,T stg ÎÎÎÎÎÎÎ

–65 to +150

THERMAL CHARACTERISTICS

Characteristic ÎÎÎÎÎ

Symbol ÎÎÎÎÎÎÎ

Max ÎÎÎ

Unit

Thermal Resistance, Junction to Case ÎÎÎÎÎ

R q JC ÎÎÎÎÎÎÎ

1.56 ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

W Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 10

Publication Order Number:

2N6497/D

2N6497

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎÎ

Min ÎÎÎ

Typ ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I C = 25 mAdc, I B = 0)

V CEO(sus) ÎÎÎÎ

Vdc

250

–

Collector Cutoff Current

(V CE = 350 Vdc, V BE(off) = 1.5 Vdc)

(V CE = 175 Vdc, V BE(off) = 1.5 Vdc, T C = 100 C)

I CEX ÎÎÎÎ

mAdc

–

1.0

Emitter Cutoff Current

(V BE = 6.0 Vdc, I C = 0)

I EBO ÎÎÎÎ

– ÎÎÎ

– ÎÎÎÎ

1.0 ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(I C = 2.5 Adc, V CE = 10 Vdc)

(I C = 5.0 Adc, V CE = 10 Vdc)

h FE

–

3.0

–

Collector–Emitter Saturation Voltage

(I C = 2.5 Adc, I B = 500 mAdc)

(I C = 5.0 Adc, I B = 2.0 Adc)

V CE(sat) ÎÎÎÎ

Vdc

–

1.0

5.0

Base–Emitter Saturation Voltage

(I C = 2.5 Adc, I B = 500 mAdc)

(I C = 5.0 Adc, I B = 2.0 Adc)

V BE(sat)

Vdc

–

1.5

2.5

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product

(I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 MHz)

f T ÎÎÎÎ

5.0 ÎÎÎ

– ÎÎÎÎ

– ÎÎÎ

MHz

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 100 kHz)

C ob

–

150

SWITCHING CHARACTERISTICS

Rise Time

(V CC = 125 Vdc, I C = 2.5 Adc, I B1 = 0.5 Adc)

t r

–

0.4 ÎÎÎÎ

1.0 ÎÎÎ

m s

Storage Time

(V CC = 125 Vdc, I C = 2.5 Adc, V BE = 5.0 Vdc, I B1 = I B2 = 0.5 Adc)

t s ÎÎÎÎ

– ÎÎÎ

1.4 ÎÎÎÎ

2.5 ÎÎÎ

m s

Fall Time

(V CC = 125 Vdc, I C = 2.5 Adc, I B1 = I B2 = 0.5 Adc)

t f

–

0.45

1.0

m s

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width 300 m s, Duty Cycle 2.0%.

V CC

+ 125 V

1.0

25 m s

R C 50

0.7

0.5

V CC = 125 V

I C /I B = 5.0

T J = 25 ° C

+ 11 V

0.3

0.2

SCOPE

R B 20

t r

- 9.0 V

D 1

0.1

0.07

0.05

t r , t f 10 ns

DUTY CYCLE = 1.0%

- 5.0 V

R B AND R C VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.03

0.02

t d @ V BE(off) = 5.0 V

D 1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE I B 100 mA

MSD6100 USED BELOW I B 100 mA

0.01

0.05

0.07

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0

I C , COLLECTOR CURRENT (AMP)

Figure 1. Switching Time Test Circuit

Figure 2. Turn–On Time

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2N6497

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

P (pk)

0.1

0.07

0.05

R q JC(max) = 1.56 ° C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) R q JC(t)

0.02

t 1

SINGLE

PULSE

0.03

0.02

t 2

0.01

SINGLE PULSE

DUTY CYCLE, D = t 1 /t 2

0.01 0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

100

200

300

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 3. Thermal Response

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 4 is based on T C = 25

5.0

2.0

5.0 ms

1.0 ms

100 m s

1.0

0.5

T C = 25 ° C

C; T J(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% provided T J(pk)

0.2

BONDING WIRE LIMITED

THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

0.1

0.05

C. T J(pk) may be calculated from the data in

Figure 3. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltage shown on

Figure 4 may be found at any case temperature by using the

appropriate curve on Figure 6.

150

CURVES APPLY BELOW RATED V CEO

0.02

5.0

7.0

100

200

300

500

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 4. Active–Region Safe Operating Area

7.0

5.0

100

t s

V CC = 125 V

I C /I B = 5.0

T J = 25 ° C

SECOND BREAKDOWN DERATING

3.0

2.0

1.0

0.7

0.5

THERMAL DERATING

0.3

0.2

t f

0.1

0.05

0.07

0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0

0 0

100

120

140

160

I C , COLLECTOR CURRENT (AMP)

T C , CASE TEMPERATURE ( ° C)

Figure 5. Turn–Off Time

Figure 6. Power Derating

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2N6497

100

4.0

T J = 150 ° C

T J = 25 ° C

V CE = 10 V

3.2

25 ° C

2.4

-55 ° C

1.6

I C = 1.0 A

2.0 A

3.0 A

5.0 A

0.8

7.0

0.05

0.07

0.1

0.2 0.3

0.5

0.7

1.0

2.0 3.0

5.0

0 0.01

0.02

0.05 0.1

0.2

0.5

1.0

2.0

5.0

I C , COLLECTOR CURRENT (AMP)

I B , BASE CURRENT (mA)

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

1.4

+4.0

1.2

T J = 25 ° C

+3.0

*APPLIES FOR I C /I B

h FE @V CE 10V

1.0

V BE(sat) @ I C /I B = 5.0

+2.0

0.8

+1.0

* q VC for V CE(sat)

25 ° C to 150 ° C

0.6

V BE @ V CE = 10 V

-55 ° C to 25 ° C

0.4

-1.0

25 ° C to 150 ° C

q VB for V BE

0.2

V CE(sat) @ I C /I B = 5.0

-2.0

I C /I B = 2.5

-55 to 25 ° C

0.05

0.07

0.1

0.2 0.3

0.5

0.7

1.0

2.0 3.0 5.0

-3.0

0.05

0.07

0.1

0.2 0.3

0.5

0.7

1.0

2.0 3.0

5.0

I C , COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

10 4

1000

V CE = 200 V

700

10 3

500

C ib

T J = 150 ° C

300

10 2

200

T J = 25 ° C

10 1

100 ° C

100

10 0

C ob

10 -1

25 ° C

10 -2

REVERSE

FORWARD

-0.1

-0.2

+0.2

+0.4

+0.6

0.4

0.6 1.0 2.0

4.0 6.0 10

100

200 400

V BE , BASE-EMITTER VOLTAGE (VOLTS)

V R , REVERSE VOLTAGE (VOLTS)

Figure 11. Collector Cutoff Region

Figure 12. Capacitance

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5.0

2N6497

PACKAGE DIMENSIONS

CASE 221A–09

ISSUE AA

TO–220AB

–T–

SEATING

PLANE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

MILLIMETERS

DIM MIN MAX MIN MAX

A 0.570

0.620

14.48

15.75

123

B 0.380

0.405

9.66

10.28

C 0.160

0.190

4.07

4.82

D 0.025

0.035

0.64

0.88

F 0.142

0.147

3.61

3.73

G 0.095

0.105

2.42

2.66

H 0.110

0.155

2.80

3.93

J 0.018

0.025

0.46

0.64

K 0.500

0.562

12.70

14.27

L 0.045

0.060

1.15

1.52

N 0.190

0.210

4.83

5.33

Q 0.100

0.120

2.54

3.04

R 0.080

0.110

2.04

2.79

S 0.045

0.055

1.15

1.39

T 0.235

0.255

5.97

6.47

U 0.000

0.050

0.00

1.27

V 0.045

---

1.15

---

Z ---

0.080

---

2.04

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