2n4400-d.pdf

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23103501 UNPDF
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4400/D
NPN Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage
V CEO
40
Vdc
Collector – Base Voltage
V CBO
60
Vdc
Emitter – Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous
I C
600
mAdc
Total Device Dissipation @ T A = 25 ° C
Derate above 25 ° C
P D
625
5.0
mW
mW/ ° C
Total Device Dissipation @ T C = 25 ° C
Derate above 25 ° C
P D
1.5
12
Watts
mW/ ° C
Operating and Storage Junction
Temperature Range
T J , T stg
– 55 to +150
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R JA
200
° C/W
Thermal Resistance, Junction to Case
R JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(I C = 0.1 mAdc, I E = 0)
V (BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(I E = 0.1 mAdc, I C = 0)
V (BR)EBO
6.0
—
Vdc
Base Cutoff Current
(V CE = 35 Vdc, V EB = 0.4 Vdc)
I BEV
—
0.1
m Adc
Collector Cutoff Current
(V CE = 35 Vdc, V EB = 0.4 Vdc)
I CEX
—
0.1
m Adc
1. Pulse Test: Pulse Width
3
300 s, Duty Cycle
3
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W Motorola, Inc. 1996
23103501.014.png 23103501.015.png 23103501.016.png 23103501.017.png 23103501.001.png
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
h FE
—
2N4401
20
—
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
2N4400
2N4401
20
40
—
—
(I C = 10 mAdc, V CE = 1.0 Vdc)
2N4400
2N4401
40
80
—
—
(I C = 150 mAdc, V CE = 1.0 Vdc)
2N4400
2N4401
50
100
150
300
(I C = 500 mAdc, V CE = 2.0 Vdc)
2N4400
2N4401
20
40
—
—
Collector – Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc)
Collector – Emitter Saturation Voltage (I C = 500 mAdc, I B = 50 mAdc)
V CE(sat)
—
—
0.4
0.75
Vdc
Base – Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc)
Base – Emitter Saturation Voltage (I C = 500 mAdc, I B = 50 mAdc)
V BE(sat)
0.75
—
0.95
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)
f T
MHz
2N4400
2N4401
200
250
—
—
Collector–Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
C cb
—
6.5
pF
Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
C eb
—
30
pF
Input Impedance
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h ie
k ohms
2N4400
2N4401
0.5
1.0
7.5
15
Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h re
0.1
8.0
X 10 –4
Small–Signal Current Gain
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h fe
—
2N4400
2N4401
20
40
250
500
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
h oe
1.0
30
m mhos
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V BE = 2.0 Vdc,
I C = 150 mAdc, I B1 = 15 mAdc)
t d
—
15
ns
(V CC = 30 Vdc, V BE = 2.0 Vdc,
I C = 150 mAdc, I B1 = 15 mAdc)
Rise Time
t r
—
20
ns
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc,
I B1 = I B2 = 15 mAdc)
t s
—
225
ns
(V CC = 30 Vdc, I C = 150 mAdc,
I B1 = I B2 = 15 mAdc)
Fall Time
t f
—
30
ns
1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
s,
DUTY CYCLE
m
200
W
s,
DUTY CYCLE
m
200 W
+16 V
9
2.0%
+16 V
9
2.0%
0
0
1.0 k W
– 2.0 V
1.0 k W
C S * < 10 pF
–14 V
C S * < 10 pF
< 2.0 ns
< 20 ns
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
– 4.0 V
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0 to 100
1.0 to 100
23103501.002.png 23103501.003.png 23103501.004.png 23103501.005.png
TRANSIENT CHARACTERISTICS
25 ° C
100 ° C
30
10
7.0
V CC = 30 V
I C /I B = 10
20
5.0
3.0
C obo
2.0
Q T
10
7.0
1.0
0.7
0.5
5.0
C cb
0.3
0.2
3.0
Q A
2.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10 20
30 50
0.1
10
20
30
50 70 100
200
300
500
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitances
Figure 4. Charge Data
100
100
70
I C /I B = 10
70
V CC = 30 V
I C /I B = 10
t r
50
50
30
t r @ V CC = 30 V
t r @ V CC = 10 V
t d @ V EB = 2.0 V
t d @ V EB = 0
30
t f
20
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
100
= t s – 1/8 t f
I B1 = I B2
I C /I B = 10 to 20
70
V CC = 30 V
I B1 = I B2
200
50
I C /I B = 20
30
100
20
I C /I B = 10
70
50
10
7.0
30
5.0
10
20
30
50 70 100
200 300
500
10
20
30
50 70 100
200 300
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
t s 4
23103501.006.png 23103501.007.png 23103501.008.png
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = 10 Vdc, T A = 25 ° C
Ban d width = 1.0 Hz
10
10
I C = 1.0 mA, R S = 150 W
I C = 500
f = 1.0 kHz
8.0
m
A, R S = 200
W
R S = OPTIMUM
RS = SOURCE
RS = RESISTANCE
8.0
I C = 100
m
A, R S = 2.0 k
W
I C = 50 m A
I C = 100
I C = 50
m
A, R S = 4.0 k
W
m
A
6.0
6.0
A
I C = 1.0 mA
m
4.0
4.0
2.0
2.0
0.01 0.02 0.05
0.1
0.2
0.5
1.0
2.0 5.0 10 20 50
100
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
100 k
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
V CE = 10 Vdc, f = 1.0 kHz, T A = 25 ° C
This group of graphs illustrates the relationship between
h fe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
300
50 k
200
20 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
10 k
100
70
5.0 k
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0 k
30
1.0 k
20
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
500
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Input Impedance
10
100
7.0
5.0
50
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
3.0
2.0
20
10
1.0
0.7
0.5
5.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.3
2.0
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
Figure 14. Output Admittance
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
I C = 500
0
23103501.009.png 23103501.010.png 23103501.011.png 23103501.012.png
STATIC CHARACTERISTICS
3.0
2.0
V CE = 1.0 V
V CE = 10 V
T J = 125 ° C
1.0
25
°
C
0.7
0.5
– 55 ° C
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50 70
100
200 300
500
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
T J = 25
°
C
0.6
I C = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3
0.5
0.7
1.0
2.0 3.0
5.0 7.0
10
20 30
50
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
+ 0.5
T J = 25 ° C
V BE(sat) @ I C /I B = 10
0.8
0
VC for V CE(sat)
– 0.5
0.6
V BE @ V CE = 10 V
– 1.0
0.4
– 1.5
0.2
V CE(sat) @ I C /I B = 10
– 2.0
VB for V BE
0
– 2.5
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50
100
200
500
0.1 0.2 0.5
1.0 2.0 5.0 10 20
50 100
200
500
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
23103501.013.png

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