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2N3055A
ON Semiconductor
NPN
2N3055A
Complementary Silicon
High-Power Transistors
MJ15015
*
*
complementary transistors designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc–to–dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
•
. . . PowerBase
MJ15016
*ON Semiconductor Preferred Device
Current–Gain — Bandwidth–Product @ I
C
= 1.0 Adc
f
T
= 0.8 MHz (Min) – NPN
= 2.2 MHz (Min) – PNP
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS
•
Safe Operating Area — Rated to 60 V and 120 V, Respectively
*MAXIMUM RATINGS
Rating
Symbol
2N3055A
MJ15015
MJ15016
Unit
Collector–Emitter Voltage
V
CEO
ÎÎÎÎ
60
120
ÎÎÎ
Vdc
Collector–Base Voltage
V
CBO
ÎÎÎÎ
100
ÎÎÎÎ
200
ÎÎÎ
Vdc
Collector–Emitter Voltage Base
Reversed Biased
V
CEV
100
ÎÎÎÎ
200
ÎÎÎ
Vdc
CASE 1–07
TO–204AA
(TO–3)
Emitter–Base Voltage
V
EBO
ÎÎÎÎÎÎÎ
7.0
Vdc
Collector Current — Continuous
I
C
15
Adc
Base Current
I
B
7.0
Adc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
115
0.65
180
1.03
Watts
W/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
ÎÎÎÎÎÎÎ
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Max
Unit
Thermal Resistance, Junction to Case
R
q
JC
1.52
0.98
C/W
*Indicates JEDEC Registered Data. (2N3055A)
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
W
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 4
1
Publication Order Number:
2N3055A/D
PNP
2N3055A MJ15015 MJ15016
200
150
MJ15015
MJ15016
100
50
2N3055A
0
0
25
50
75
100
125
150
175
200
T
C
, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
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2
2N3055A MJ15015 MJ15016
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*Collector–Emitter Sustaining Voltage
2N3055A
V
CEO(sus)
60
120
—
—
Vdc
(I
C
= 200 mAdc, I
B
= 0)
MJ15015, MJ15016
Collector Cutoff Current
(V
CE
= 30 Vdc, V
BE(off)
= 0 Vdc)
I
CEO
mAdc
2N3055A
—
—
0.7
0.1
(V
CE
= 60 Vdc, V
BE(off)
= 0 Vdc)
MJ15015, MJ15016
*Collector Cutoff Current
2N3055A
I
CEV
ÎÎÎÎ
—
—
5.0
1.0
mAdc
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
MJ15015, MJ15016
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc,
I
CEV
mAdc
2N3055A
—
—
30
6.0
T
C
= 150
C)
MJ15015, MJ15016
Emitter Cutoff Current
2N3055A
I
EBO
ÎÎÎÎ
—
—
5.0
0.2
mAdc
(V
EB
= 7.0 Vdc, I
C
= 0)
MJ15015, MJ15016
*SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non–repetitive)
I
S/b
ÎÎÎÎ
Adc
2N3055A
1.95
3.0
—
—
(V
CE
= 60 Vdc)
MJ15015, MJ15016
*ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
—
10
20
5.0
70
70
—
Collector–Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 400 mAdc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
(I
C
= 15 Adc, I
B
= 7.0 Adc)
V
CE(sat)
Vdc
—
—
—
1.1
3.0
5.0
Base–Emitter On Voltage
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
0.7
1.8
Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
2N3055A, MJ15015
f
T
0.8
2.2
6.0
18
MHz
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz)
MJ15016
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
60
ÎÎÎÎ
600
ÎÎÎÎ
pF
*SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD
Delay Time
t
d
—
ÎÎÎÎ
0.5
ÎÎÎÎ
m
s
Rise Time
(V
CC
= 30 Vdc, I
C
= 4.0 Adc,
I
B1
=I
B2
=04Adc
t
r
—
ÎÎÎÎ
4.0
ÎÎÎÎ
m
s
I
B1
= I
B2
= 0.4 Adc,
t
p
= 25
m
s Duty Cycle
2%
Storage Time
t
s
—
ÎÎÎÎ
3.0
ÎÎÎÎ
m
s
m
yy
Fall Time
t
f
—
6.0
m
s
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.
*Indicates JEDEC Registered Data. (2N3055A)
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3
m
2N3055A MJ15015 MJ15016
200
2.8
T
J
= 150
°
C
T
J
= 25
°
C
100
2.4
70
50
2
-55
°
C
I
C
= 1 A
4 A
8 A
30
1.6
20
V
CE
= 4.0 V
25
°
C
1.2
10
7
0.8
5
0.4
3
2
0.2
0.3 0.5 0.7 1
2
3
5
7
10
15
0
0.005
0.01 0.02
0.05 0.1
0.2
0.5
1
2
5
I
C
, COLLECTOR CURRENT (AMP)
I
B
, BASE CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
3.5
10
3
T
C
= 25
°
C
2.5
5.0
MJ15016
2
1.5
2.0
2N3055A
MJ15015
1
V
BE(sat)
@ I
C
/I
B
= 10
1.0
V
BE(on)
@ V
CE
= 4 V
0.5
V
CE(sat)
@ I
C
/I
B
= 10
0
0.2
0.3
0.5 0.7 1
2
3
5 7
10
20
0.1
0.2
0.3
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 4. “On” Voltages
Figure 5. Current–Gain — Bandwidth Product
10
V
CC
+30 V
7
5
3
2
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25
°
C
7.5
W
t
r
25
m
s
1
0.7
0.5
SCOPE
+13 V
30
W
0
-11 V
1N6073
0.3
0.2
t
d
t
r
, t
f
3
10 ns
DUTY CYCLE = 1.0%
-5 V
0.1
0.2
0.3
0.5 0.7 1
2
3
5
7
10
15
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
Figure 7. Turn–On Time
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4
2N3055A MJ15015 MJ15016
10
400
7
5
T
J
= 25
°
C
2N3055A
MJ15015
MJ15016
3
2
200
C
ib
t
s
0.1
t
f
100
0.7
0.5
V
CC
= 30
I
C
/I
B
= 10
I
B
1 = I
B
2
T
J
= 25
°
C
50
C
ob
0.3
0.2
30
0.1
0.2
0.3
0.5 0.7 1
2
3
5
70
15
20
1.0
2.0
5.0
10
20
50
100 200
500 1000
I
C
, COLLECTOR CURRENT (AMPS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 8. Turn–Off Times
Figure 9. Capacitances
COLLECTOR CUT–OFF REGION
NPN
PNP
10,000
1000
V
CE
= 30 V
V
CE
= 30 V
1000
100
100
10
T
J
= 150
°
C
T
J
= 150
°
C
10
1.0
100
°
C
100
°
C
I
C
= I
CES
1.0
I
C
= I
CES
0.1
REVERSE
FORWARD
REVERSE
FORWARD
0.1
0.01
25
°
C
25
°
C
0.01
+0.2
+0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
0.001
-0.2
-0.1
0
+0.1
+0.2
+0.3
+0.4
+0.5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
Figure 11. MJ15016
20
20
30
m
s
0.1ms
10
10
100
m
s
5.0
5
1 ms
1.0ms
2.0
100 ms
1.0
100ms
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2
dc
0.5
dc
1
10
20
60
100
0.2
15
20
30
60
100
120
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
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