2n3055a-d.pdf

ON Semiconductor

NPN

2N3055A

Complementary Silicon

High-Power Transistors

MJ15015

complementary transistors designed for high

power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc–to–dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

•

. . . PowerBase

MJ15016

*ON Semiconductor Preferred Device

Current–Gain — Bandwidth–Product @ I C = 1.0 Adc

f T = 0.8 MHz (Min) – NPN

= 2.2 MHz (Min) – PNP

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 120 VOLTS

115, 180 WATTS

•

Safe Operating Area — Rated to 60 V and 120 V, Respectively

*MAXIMUM RATINGS

Rating

Symbol

2N3055A

MJ15015

MJ15016

Unit

Collector–Emitter Voltage

V CEO ÎÎÎÎ

120 ÎÎÎ

Vdc

Collector–Base Voltage

V CBO ÎÎÎÎ

100 ÎÎÎÎ

200 ÎÎÎ

Vdc

Collector–Emitter Voltage Base

Reversed Biased

V CEV

100 ÎÎÎÎ

200 ÎÎÎ

Vdc

CASE 1–07

TO–204AA

(TO–3)

Emitter–Base Voltage

V EBO ÎÎÎÎÎÎÎ

7.0

Vdc

Collector Current — Continuous

I C

Adc

Base Current

I B

7.0

Adc

Total Device Dissipation @ T C = 25C

Derate above 25C

P D

115

0.65

180

1.03

Watts

W/C

Operating and Storage Junction

Temperature Range

T J , T stg ÎÎÎÎÎÎÎ

–65 to +200

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R q JC

1.52

0.98

C/W

*Indicates JEDEC Registered Data. (2N3055A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 4

Publication Order Number:

2N3055A/D

PNP

2N3055A MJ15015 MJ15016

200

150

MJ15015

MJ15016

100

2N3055A

0 0

100

125

150

175

200

T C , CASE TEMPERATURE ( ° C)

Figure 1. Power Derating

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2N3055A MJ15015 MJ15016

ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Collector–Emitter Sustaining Voltage

2N3055A

V CEO(sus)

120

—

Vdc

(I C = 200 mAdc, I B = 0)

MJ15015, MJ15016

Collector Cutoff Current

(V CE = 30 Vdc, V BE(off) = 0 Vdc)

I CEO

mAdc

2N3055A

—

0.7

0.1

(V CE = 60 Vdc, V BE(off) = 0 Vdc)

MJ15015, MJ15016

*Collector Cutoff Current

2N3055A

I CEV ÎÎÎÎ

—

5.0

1.0

mAdc

(V CEV = Rated Value, V BE(off) = 1.5 Vdc)

MJ15015, MJ15016

Collector Cutoff Current

(V CEV = Rated Value, V BE(off) = 1.5 Vdc,

I CEV

mAdc

2N3055A

—

6.0

T C = 150

MJ15015, MJ15016

Emitter Cutoff Current

2N3055A

I EBO ÎÎÎÎ

—

5.0

0.2

mAdc

(V EB = 7.0 Vdc, I C = 0)

MJ15015, MJ15016

*SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(t = 0.5 s non–repetitive)

I S/b ÎÎÎÎ

Adc

2N3055A

1.95

3.0

—

(V CE = 60 Vdc)

MJ15015, MJ15016

*ON CHARACTERISTICS (1)

DC Current Gain

(I C = 4.0 Adc, V CE = 2.0 Vdc)

(I C = 4.0 Adc, V CE = 4.0 Vdc)

(I C = 10 Adc, V CE = 4.0 Vdc)

h FE

—

5.0

—

Collector–Emitter Saturation Voltage

(I C = 4.0 Adc, I B = 400 mAdc)

(I C = 10 Adc, I B = 3.3 Adc)

(I C = 15 Adc, I B = 7.0 Adc)

V CE(sat)

Vdc

—

1.1

3.0

5.0

Base–Emitter On Voltage

(I C = 4.0 Adc, V CE = 4.0 Vdc)

V BE(on)

0.7

1.8

Vdc

*DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

2N3055A, MJ15015

f T

0.8

2.2

6.0

MHz

(I C = 1.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz)

MJ15016

Output Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C ob

60 ÎÎÎÎ

600 ÎÎÎÎ

*SWITCHING CHARACTERISTICS (2N3055A only)

RESISTIVE LOAD

Delay Time

t d

— ÎÎÎÎ

0.5 ÎÎÎÎ

Rise Time

(V CC = 30 Vdc, I C = 4.0 Adc,

I B1 =I B2 =04Adc

t r

— ÎÎÎÎ

4.0 ÎÎÎÎ

m s

I B1 = I B2 = 0.4 Adc,

t p = 25 m s Duty Cycle 2%

Storage Time

t s

— ÎÎÎÎ

3.0 ÎÎÎÎ

m s

Fall Time

t f

—

6.0

(1) Pulse Test: Pulse Width = 300

s, Duty Cycle

2%.

*Indicates JEDEC Registered Data. (2N3055A)

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2N3055A MJ15015 MJ15016

200

2.8

T J = 150 ° C

T J = 25 ° C

100

2.4

-55 ° C

I C = 1 A

4 A

8 A

1.6

V CE = 4.0 V

25 ° C

1.2

0.8

0.4

0.2

0.3 0.5 0.7 1

0.005

0.01 0.02

0.05 0.1

0.2

0.5

I C , COLLECTOR CURRENT (AMP)

I B , BASE CURRENT (AMP)

Figure 2. DC Current Gain

Figure 3. Collector Saturation Region

3.5

T C = 25 ° C

2.5

5.0

MJ15016

1.5

2.0

2N3055A

MJ15015

V BE(sat) @ I C /I B = 10

1.0

V BE(on) @ V CE = 4 V

0.5

V CE(sat) @ I C /I B = 10

0.2

0.3

0.5 0.7 1

5 7

0.1

0.2

0.3

0.5

1.0

2.0

I C , COLLECTOR CURRENT (AMP)

I C , COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages

Figure 5. Current–Gain — Bandwidth Product

V CC

+30 V

V CC = 30 V

I C /I B = 10

T J = 25 ° C

7.5 W

t r

25 m s

0.7

0.5

SCOPE

+13 V

30 W

-11 V

1N6073

0.3

0.2

t d

t r , t f 3 10 ns

DUTY CYCLE = 1.0%

-5 V

0.1

0.2

0.3

0.5 0.7 1

I C , COLLECTOR CURRENT (AMP)

Figure 6. Switching Times Test Circuit

(Circuit shown is for NPN)

Figure 7. Turn–On Time

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2N3055A MJ15015 MJ15016

400

T J = 25 ° C

2N3055A

MJ15015

MJ15016

200

C ib

t s

0.1

t f

100

0.7

0.5

V CC = 30

I C /I B = 10

I B 1 = I B 2

T J = 25 ° C

C ob

0.3

0.2

0.1

0.2

0.3

0.5 0.7 1

1.0

2.0

5.0

100 200

500 1000

I C , COLLECTOR CURRENT (AMPS)

V R , REVERSE VOLTAGE (VOLTS)

Figure 8. Turn–Off Times

Figure 9. Capacitances

COLLECTOR CUT–OFF REGION

NPN

PNP

10,000

1000

V CE = 30 V

1000

100

T J = 150 ° C

1.0

100 ° C

I C = I CES

1.0

I C = I CES

0.1

REVERSE

FORWARD

REVERSE

FORWARD

0.1

0.01

25 ° C

0.01

+0.2

+0.1

-0.1

-0.2

-0.3

-0.4

-0.5

0.001

-0.2

-0.1

+0.1

+0.2

+0.3

+0.4

+0.5

V BE , BASE-EMITTER VOLTAGE (VOLTS)

Figure 10. 2N3055A, MJ15015

Figure 11. MJ15016

30 m s

0.1ms

100 m s

5.0

1 ms

1.0ms

2.0

100 ms

1.0

100ms

BONDING WIRE LIMIT

THERMAL LIMIT @ T C = 25 ° C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT @ T C = 25 ° C

(SINGLE PULSE)

SECOND BREAKDOWN LIMIT

0.5

100

0.2 15

100

120

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area

2N3055A

Figure 13. Forward Bias Safe Operating Area

MJ15015, MJ15016

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