2SC5583.pdf
(
46 KB
)
Pobierz
2SC5583
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0
±
0.5
5.0
±
0.3
(3.0)
φ
3.3
±
0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide area of safe operation (ASO)
(1.5)
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
(1.5)
2.7
±
0.3
Absolute Maximum Ratings
T
C
=
25
°
C
0.6
±
0.2
Parameter
Symbol
Rating
Unit
5.45
±
0.3
Collector to base voltage
V
CBO
1 500
V
10.9
±
0.5
Collector to emitter voltage
V
CES
1 500
V
1: Base
2: Collector
3: Emitter
TOP-3L Package
V
CEO
600
V
123
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
30
A
Collector current
I
C
17
A
Marking Symbol: C5583
Base current
I
B
8
A
Internal Connection
Collector power
T
C
=
25
°
C
P
C
150
W
C
dissipation
T
a
=
25
°
C
3
Junction temperature
T
j
150
°
C
B
Storage temperature
T
stg
−
55 to
+
150
°
C
E
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 1 000 V, I
E
= 0
50
µA
V
CB
= 1 500 V, I
E
= 0
1
mA
Emitter cutoff current
I
EBO
V
EB
= 7 V, I
C
= 0
50
µA
Forward current transfer ratio
h
FE
V
CE
= 5 V, I
C
= 8.5 A
6
12
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 8.5 A, I
B
= 2.13 A
3
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 8.5 A, I
B
= 2.13 A
1.5
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t
stg
I
C
= 8.5 A, Resistance loaded
2.7
µs
Fall time
t
f
I
B1
= 2.13 A, I
B2
= −4.25 A
0.2
µs
1
Plik z chomika:
aos.artur2
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