BUK854-800A_1.pdf

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Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Fast-switching N-channel insulated
SYMBOL PARAMETER
MAX.
UNIT
gate bipolar power transistor in a
plastic envelope.
V CE
Collector-emitter voltage
800
V
The device is intended for use in
I C
Collector current (DC)
12
A
motor control, DC/DC and AC/DC
P tot
Total power dissipation
85
W
converters, and in general purpose
V CEsat
Collector-emitter on-state voltage
3.5
V
high frequency switching
E off
Turn-off Energy Loss
0.5
mJ
applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
c
1
gate
2
collector
3
emitter
g
tab collector
123
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CE
Collector-emitter voltage
-
-5
800
V
V CGR
Collector-gate voltage
R GE = 20 k
W
-
800
V
±
V GE
Gate-emitter voltage
-
-
30
V
I C
Collector current (DC)
T mb = 25 ˚C
-
12
A
I C
Collector current (DC)
T mb = 100 ˚C
-
6
A
I CLM
Collector Current (Clamped
T j
£
T jmax.
-
20
A
Inductive Load)
V CL
£
500 V
I CM
Collector current (pulsed peak value, T j
£
T jmax.
-
30
A
on-state)
P tot
Total power dissipation
T mb = 25 ˚C
-
85
W
T stg
Storage temperature
-
- 55
150
˚C
T j
Junction Temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R th j-mb
Junction to mounting base
-
-
1.47
K/W
R th j-a
Junction to ambient
In free air
60
-
K/W
October 1994
1
Rev.1.100
22889456.007.png
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
STATIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)CES
Collector-emitter breakdown
V GE = 0 V; I C = 0.25 mA
800
-
-
V
voltage
V GE(TO)
Gate threshold voltage
V CE = V GE ; I C = 1 mA
3
4
5.5
V
I CES
Zero gate voltage collector
V CE = 800 V; V GE = 0 V; T j = 25 ˚C
-
10
100
m
A
current
I CES
Zero gate voltage collector
V CE = 800 V; V GE = 0 V; T j =125 ˚C
-
0.1
1
mA
current
I ECS
Reverse collector current
V CE = -5 V; V GE = 0 V
-
0.1
5
mA
I GES
Gate emitter leakage current
V GE =
±
30 V; V CE = 0 V
-
10
100
nA
V CEsat
Collector-emitter saturation
V GE = 15 V; I C = 6 A
-
2.4
3.5
V
voltage
V GE = 15 V; I C = 12 A
-
3.1
-
V
DYNAMIC CHARACTERISTICS
T mb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fe
Forward transconductance
V CE = 15 V; I C = 3 A
1.5
4
-
S
C ies
Input capacitance
V GE = 0 V; V CE = 25 V; f = 1 MHz
-
400
750
pF
C oes
Output capacitance
-
45
80
pF
C res
Feedback capacitance
-
15
40
pF
t d on
Turn-on delay time
I C = 6 A; V CC = 500 V;
-
20
-
ns
t r
Turn-on rise time
V GE = 15 V; R G = 25
W
;
-
30
-
ns
E on
Turn-on Energy Loss
T j = 25˚C;
-
0.25
-
mJ
t d off
Turn-off delay time
Inductive Load
-
170
270
ns
t f
Turn-off fall time
Energy Losses include all ’tail’
-
200
400
ns
E off
Turn-off Energy Loss
losses
-
0.25
0.5
mJ
t d on
Turn-on delay time
I C = 6 A; V CC = 500 V;
-
20
-
ns
t r
Turn-on rise time
V GE = 15 V; R G = 25
W
;
-
30
-
ns
E on
Turn-on Energy Loss
T j = 125˚C;
-
0.25
-
mJ
t d off
Turn-off delay time
Inductive Load
-
200
350
ns
t f
Turn-off fall time
Energy Losses include all ’tail’
-
400
800
ns
E off
Turn-off Energy Loss
losses
-
0.5
1
mJ
October 1994
2
Rev.1.100
22889456.008.png 22889456.009.png
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
1E+01
Zth j-mb / (K/W)
IC / A
BUK8Y4-800A
30
20 15
10
D =
1E+00
0.5
0.2
0.1
0.05
0.02
20
9
1E-01
8
10
1E-02
P
t p
D =
t p
7
0
D
T
t
VGE / V = 6
T
1E-03
0
1E-07
1E-05
1E-03
1E-01
1E+01
0
5
10
15
20
t / s
VCE / V
Fig.1. Transient thermal impedance
Z th j-mb = f(t) ; parameter D = t p /T
Fig.4. Typical output characteristics, T j =25 ˚C.
I C =f(V CE ); parameter V GE
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
30
IC / A
BUK8Y4-800A
VGE / V =
15
10
20
10
0
Tj / C = 25
150
0
20
40
60
80
100 120 140
0
1
2
3
4
5
6
Tmb / C
VCEsat / V
Fig.2. Normalised power dissipation.
PD% = 100.P D /P D 25˚C = f(T mb )
Fig.5. Typical on-state characteristics
I C =f(V CE ); parameters T j, V GE
100
IC / A
BUK854-800
IC / A
Tj / C = 25
150
BUK8Y4-800A
30
ICLM
10
20
1
10
0.1
0
200
400
600
800
1000
0
0
2
4
6
8
10
12
VCE / V
VGE / V
Fig.3. Turn-off Safe Operating Area
conditions: T j
£
T jmax. ; R G = 50
W
Fig.6. Typical transfer characteristics
I C =f(V GE ) ; conditions: V CE =15 V; parameter T j
October 1994
3
Rev.1.100
22889456.010.png 22889456.001.png 22889456.002.png 22889456.003.png
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
gfe / S
BUK8Y4-800A
1000
C / pF
BUK854-800A
8
7
6
Cies
5
4
100
3
2
Coes
1
0
10
Cres
0
10
20
30
0
10
20
30
40
IC / A
VDS / V
Fig.7. Typical transconductance, T j = 25 ˚C.
g fe = f(I C ); conditions: V CE = 15 V
Fig.10. Typical capacitances, C ies , C oes , C res .
C = f(V CE ); conditions: V GE = 0 V; f = 1MHz.
16
VGE / V
BUK8Y4-800A
12
dVCE/dt (V /ns)
BUK8Y4-800A
14
10
12
10
8
8
6
6
4
4
2
2
0
0
5
10
15
20
25
30
0
1
10
100
1000
QG / nC
Rg / Ohm
Fig.8. Typical turn-on gate-charge characteristics.
V GE = f(Q G ); conditions: I C = 6 A; V CE = 500 V
Fig.11. Typical turn-off dV CE /dt vs. R G
conditions: I C = 6 A; V CL = 500 V; T j = 125 ˚C
500
t / ns
BUK8Y4-800A
0.7
E / mJ
BUK8Y4-800A
400
0.6
0.5
300
0.4
200
tf
0.3
E(on)
E(off)
td(off)
0.2
100
0.1
0
0
20 40 60 80 100 120 140
Tj / C
0
0
20 40 60 80 100 120 140
Tj / C
Fig.9. Typical Switching Times vs. T j
conditions: I C = 6 A; V CL = 500 V; R G = 25
W
Fig.12. Typical Switching losses vs. T j
conditions: I C = 6 A; V CL = 500 V; R G = 25
W
October 1994
4
Rev.1.100
22889456.004.png
Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK854-800A
10000
t / ns
BUK8Y4-800A
2
E(off) / mJ
BUK8Y4-800A
td(off)
1.5
1000
tf
1
100
0.5
10
1
10
100
1000
0
1
10
100
1000
Rg / Ohm
Rg / Ohm
Fig.13. Typical Switching Times vs. R G
conditions: I C = 6 A; V CL = 500 V; T j = 125 ˚C
Fig.16. Typical Energy loss at turn-off vs. R G
conditions: I C = 6 A; V CL = 500 V; T j = 125 ˚C
t / ns
BUK8Y4-800A
2
E(off) / mJ
BUK8Y4-800A
500
400
tf
1.5
VCL / V = 500
300
400
1
300
200
td(off)
0.5
100
0
0
0
5
10
15
20
0
5
10
15
IC / A
IC / A
Fig.17. Typical Energy loss at turn-off vs. I C
conditions: V CL = 500 V; R G = 25
Fig.14. Typical Switching Times vs. I C
conditions: V CL = 500 V; R G = 25
W
; T j = 125˚C
parameter V CL
W
; T j = 125˚C;
VCC = VCL
I
IC
90%
Lc
tr
t p
: adjust for correct Ic
tf
10%
V
td(on)
td(off)
t
VGE
VCE
D.U.T.
90%
R
G
tc
VGE
IC measure
10%
0V
0R1
t
Fig.15. Test circuit for inductive load switching times.
Fig.18. Inductive Load Switching Times definitions.
October 1994
5
Rev.1.100
22889456.005.png 22889456.006.png

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