BS170_CNV_2.pdf

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N-channel vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
BS170
N-channel vertical D-MOS
transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
22885886.051.png
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
Drain-source voltage
V DS
max.
60 V
Gate-source voltage
V GS
max.
15 V
Drain current (DC)
I D
max.
500 mA
Total power dissipation up to T amb =25 ° C tot
max.
830 mW
Junction temperature
T j
max.
150
°
C
FEATURES
Drain-source ON-resistance
V GS = 10 V; I D = 200 mA
·
Very low R DS(on) .
R DS(on) max.
5
W
·
Direct interface to C-MOS, TTL,
etc.
·
High-speed switching.
·
No secondary breakdown.
PINNING - TO-92 VARIANT
1 = source
2 = gate
3 = drain
PIN CONFIGURATION
handbook, halfpage
1
d
2
3
g
MAM146
s
Note: Various pin configurations available.
Fig.1 Simplified outline and symbol.
April 1995
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Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
V DS
max.
60 V
Drain-gate voltage
V DG
max.
60 V
Gate-source voltage
V GS
max.
15 V
Drain current (DC) at T c = 25
°
C
I D
max.
500 mA
Total power dissipation up to T amb = 25
°
C
P tot
max.
830 mW
Storage temperature range
T stg
-
55 to +150
°
C
Junction temperature
T j
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
R th j-a
=
150 K/W
CHARACTERISTICS
T j =25
Drain-source breakdown voltage
min.
typ.
60
90
V
V
V GS = 0; I D = 100
m
A
V (BR)DS
Gate threshold voltage
min.
max.
0.8
3.0
V
V
V GS = V DS ;I D = 1 mA
V GS(th)
Gate-source leakage current
V GS = 15 V; V DS =0
I GSoff
max.
10 nA
Drain cut-off current
V DS = 25 V; V GS =0
I DSS
max.
0.5
m
A
Drain-source ON-resistance (note 1)
typ.
max.
2.5
5.0
W
W
V GS = 10 V; I D = 200 mA
R DS(on)
Forward transconductance (note 1)
V DS = 10 V; I D = 200 mA; f = 1 kHz
g fs
typ.
200 mS
Capacitances at f = 1 MHz
typ.
max.
25
40
pF
pF
V DS = 10 V; V GS =0
C iss
C os
typ.
max.
22
30
pF
pF
C rs
typ.
max.
6
10
pF
pF
Switching times at I D = 200 mA
typ.
max.
4
10
ns
ns
I D = 200 mA; V DS = 50 V;
t on
V GS = 0 to 10 V
t off
typ.
max.
4
10
ns
ns
April 1995
3
°
C unless otherwise specified
22885886.015.png 22885886.016.png
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
Note
1. t p =80 m s; d = 0,01.
handbook, halfpage
V DD = 50 V
handbook, halfpage
90 %
INPUT
10 %
10 V
90 %
0 V
I D
OUTPUT
50 W
10 %
MSA631
t on
t off
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
April 1995
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Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
SOT54 variant
c
L 2
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
max
L 2
max
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54 variant
TO-92
SC-43
97-04-14
April 1995
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