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BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
l
Designed for Complementary Use with the
BD746 Series
SOT-93 PACKAGE
(TOP VIEW)
l
115 W at 25°C Case Temperature
B
1
l
20 A Continuous Collector Current
l
25 A Peak Collector Current
C
2
l
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD745
BD745A
BD745B
BD745C
V
CBO
50
70
90
110
V
Collector-emitter voltage (I
B
= 0)
BD745
BD745A
BD745B
BD745C
V
CEO
45
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
20
A
Peak collector current (see Note 1)
I
CM
25
A
Continuous base current
I
B
7
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
P
tot
115
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
P
tot
3.5
W
Unclamped inductive load energy (see Note 4)
½LI
C
2
90
mJ
Operating free air temperature range
T
A
-65 to +150
°C
Operating junction temperature range
T
j
-65 to +150
°C
Storage temperature range
T
stg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
°C
NOTES: 1. This value applies for t
p
£
0.3 ms, duty cycle
£
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
W
,
V
BE(off)
= 0, R
S
= 0.1
W
, V
CC
= 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
(see Note 5)
BD745
BD745A
BD745B
BD745C
45
60
80
100
V
I
CBO
Collector cut-off
current
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
V
CE
= 50 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 110 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD745
BD745A
BD745B
BD745C
BD745
BD745A
BD745B
BD745C
0.1
0.1
0.1
0.1
5
5
5
5
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
BD745/745A
BD745B/745C
0.1
0.1
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
0.5
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 5 A
I
C
= 20 A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.5 A
I
B
= 5 A
I
C
= 5 A
I
C
= 20 A
(see Notes 5 and 6)
1
3
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
V
CE
= 4 V
I
C
= 5 A
I
C
= 20 A
(see Notes 5 and 6)
1
3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 1 A
f = 1 kHz
25
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 1 A
f = 1 MHz
5
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
£
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN
TYP MAX
UNIT
R
q
JC
Junction to case thermal resistance
1.1
°C/W
R
q
JA
Junction to free air thermal resistance
35.7
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
†
MIN
TYP MAX
UNIT
t
d
Delay time
20
ns
t
r
Rise time
I
C
= 5 A
V
BE(off)
= -4.2 V
I
B(on)
= 0.5 A
R
L
= 6
W
I
B(off)
= -0.5 A
t
p
= 20 µs, dc
£
2%
350
ns
t
s
Storage time
500
ns
t
f
Fall time
400
ns
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT INFORMATION
2
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS635AE
TCS635AF
100
10
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
I
C
I
B
= 10
t
p
= 300µs, duty cycle < 2%
1·0
0·1
10
V
CE
= 4 V
t
p
= 300 µs, duty cycle < 2%
0·01
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
0·1
1·0
10
100
0·1
1·0
10
100
I
C
- Collector Current - A
I
C
- Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS635AC
100
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD745
BD745A
BD745B
BD745C
0·01
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 3.
PRODUCT INFORMATION
3
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS635AB
120
100
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 4.
PRODUCT INFORMATION
4
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
4,1
4,0
15,2
14,7
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
1,10
0,78
0,50
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
PRODUCT INFORMATION
5
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