BD745.PDF

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

l Designed for Complementary Use with the

BD746 Series

SOT-93 PACKAGE

(TOP VIEW)

l 115 W at 25°C Case Temperature

l 20 A Continuous Collector Current

l 25 A Peak Collector Current

l Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

Collector-base voltage (I E = 0)

BD745

BD745A

BD745B

BD745C

V CBO

110

Collector-emitter voltage (I B = 0)

BD745

BD745A

BD745B

BD745C

V CEO

100

Emitter-base voltage

V EBO

Continuous collector current

I C

Peak collector current (see Note 1)

I CM

Continuous base current

I B

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

P tot

115

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

P tot

3.5

Unclamped inductive load energy (see Note 4)

½LI C 2

Operating free air temperature range

T A

-65 to +150

°C

Operating junction temperature range

T j

-65 to +150

°C

Storage temperature range

T stg

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

T L

260

°C

NOTES: 1. This value applies for t p £ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 0.4 A, R BE = 100 W ,

V BE(off) = 0, R S = 0.1 W , V CC = 20 V.

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP MAX

UNIT

V (BR)CEO

Collector-emitter

breakdown voltage

I C = 30 mA

I B = 0

(see Note 5)

BD745

BD745A

BD745B

BD745C

100

I CBO

Collector cut-off

current

V CE = 50 V

V CE = 70 V

V CE = 90 V

V CE = 110 V

V CE = 50 V

V CE = 70 V

V CE = 90 V

V CE = 110 V

V BE = 0

T C = 125°C

BD745

BD745A

BD745B

BD745C

BD745

BD745A

BD745B

BD745C

0.1

I CEO

Collector cut-off

current

V CE = 30 V

V CE = 60 V

I B = 0

BD745/745A

BD745B/745C

0.1

I EBO

Emitter cut-off

current

V EB = 5 V

I C = 0

0.5

h FE

Forward current

transfer ratio

V CE = 4 V

I C = 1 A

I C = 5 A

I C = 20 A

(see Notes 5 and 6)

150

V CE(sat)

Collector-emitter

saturation voltage

I B = 0.5 A

I B = 5 A

I C = 5 A

I C = 20 A

(see Notes 5 and 6)

V BE

Base-emitter

voltage

V CE = 4 V

I C = 5 A

I C = 20 A

(see Notes 5 and 6)

h fe

Small signal forward

current transfer ratio

V CE = 10 V

I C = 1 A

f = 1 kHz

| h fe |

Small signal forward

current transfer ratio

V CE = 10 V

I C = 1 A

f = 1 MHz

NOTES: 5. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle £ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

MIN

TYP MAX

UNIT

R q JC

Junction to case thermal resistance

1.1

°C/W

R q JA

Junction to free air thermal resistance

35.7

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

MIN

TYP MAX

UNIT

t d

Delay time

t r

Rise time

I C = 5 A

V BE(off) = -4.2 V

I B(on) = 0.5 A

R L = 6 W

I B(off) = -0.5 A

t p = 20 µs, dc £ 2%

350

t s

Storage time

500

t f

Fall time

400

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT INFORMATION

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR CURRENT

TCS635AE

TCS635AF

100

T C = 125°C

T C = 25°C

T C = -55°C

I C

I B

= 10

t p = 300µs, duty cycle < 2%

1·0

0·1

V CE = 4 V

t p = 300 µs, duty cycle < 2%

0·01

T C = -55°C

T C = 25°C

T C = 125°C

0·1

1·0

100

0·1

1·0

100

I C - Collector Current - A

Figure 1.

Figure 2.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS635AC

100

t p = 1 ms,

d = 0.1 = 10%

t p = 10 ms,

d = 0.1 = 10%

t p = 50 ms,

d = 0.1 = 10%

DC Operation

1·0

0·1

BD745

BD745A

BD745B

BD745C

0·01

1·0

100

1000

V CE - Collector-Emitter Voltage - V

Figure 3.

PRODUCT INFORMATION

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TIS635AB

120

100

125

150

T C - Case Temperature - °C

Figure 4.

PRODUCT INFORMATION

BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SOT-93

4,90

4,70

4,1

4,0

15,2

14,7

3,95

4,15

1,37

1,17

16,2 MAX.

12,2 MAX.

31,0 TYP.

18,0 TYP.

1,30

1,10

0,78

0,50

11,1

10,8

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

MDXXAW

PRODUCT INFORMATION

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