BD681.PDF

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
n
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
n
MONOLITHIC DARLINGTON
CONFIGURATION
n
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
n
APPLICATION
n
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
2 1
3
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A, BD680, BD680A and BD682
respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R 1 Typ.= 7K
W
R 2 Typ.= 230
W
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN BD677/A
BD679/A
BD681
PNP BD678/A
BD680/A
BD682
V CBO
Collector-Base Voltage (I E =0)
60
80
100
V
V CEO
Collector-Emitter Voltage (I B =0)
60
80
100
V
V EBO
Emitter-Base Voltage (I C =0)
5
V
I C
Collector Current
4
A
I CM
Collector Peak Current
6
A
I B
Base Current
0.1
A
P tot
Total Dissipation at T c
3
25 o C
40
W
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
o C
For PNP types voltage and current values are negative.
September 1997
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BD677/677A/678/678A/679/679A/680/680A/681/682
THERMAL DATA
R thj-case
R t hj- amb
Thermal Resistance Junction-case
Max
3.12
100
o C/W
o C/W
Thermal Resistance Junction-ambient
Max
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E =0)
V CE =ratedV CBO
V CE =ratedV CBO
T C = 100
o C
0.2
2
mA
mA
I CEO
Collector Cut-off
Current (I B =0)
V CE = half rated V CEO
0.5
mA
I EBO
Emitter Cut-off Current
(I C =0)
V EB =5V
2
A
V CEO(sus )
*
Collector-Emitter
Sustaining Voltage
I C =50mA
for BD677/677A/678/678A
for BD679/679A/680/680A
for BD681/682
60
80
100
V
V
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
for BD677/678/679/680/681/682
I C =1.5A I B =30mA
for BD677A/678A/679A/680A
I C =2A
2.5
V
I B =40mA
2.8
V
Base-Emitter Voltage
for BD677/678/679/680/681/682
I C =1.5A V CE =3V
for BD677A/678A/679A/680A
I C =2A
V BE
*
2.5
V
V CE =3V
2.5
V
DC Current Gain
for BD677/678/679/680/681/682
I C =1.5A V CE =3V
for BD677A/678A/679A/680A
I C =2A
h FE
*
750
V CE =3V
750
h fe
Small Signal Current
Gain
I C =1.5A V CE =3V f=1MHz
1
* Pulsed: Pulse duration = 300 m s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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BD677/677A/678/678A/679/679A/680/680A/681/682
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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BD677/677A/678/678A/679/679A/680/680A/681/682
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
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BD677/677A/678/678A/679/679A/680/680A/681/682
SOT-32 (TO-126) MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
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