BC140_141_CNV_2.pdf

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NPN medium power transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D110
BC140; BC141
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
22885722.021.png
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
FEATURES
PINNING
·
High current (max. 1 A)
PIN
DESCRIPTION
·
Low voltage (max. 60 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to case
·
General purpose switching and amplification.
DESCRIPTION
1
handbook, halfpage
3
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
2
2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V CBO
collector-base voltage
open emitter
BC140
-
-
80
V
BC141
-
-
100
V
V CEO
collector-emitter voltage
open base
BC140
-
-
40
V
BC141
-
-
60
V
I CM
peak collector current
-
-
1.5
A
P tot
total power dissipation
T case £
45
°
C
-
-
3.7
W
h FE
DC current gain
I C = 100 mA; V CE =1V
BC140-10; BC141-10
63
100
160
BC140-16; BC141-16
100
160
250
f T
transition frequency
I C = 50 mA; V CE = 10 V; f = 100 MHz 50
-
-
MHz
1997 May 12
2
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Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC140
-
80
V
BC141
-
100
V
V CEO
collector-emitter voltage
open base
BC140
-
40
V
BC141
-
60
V
V EBO
emitter-base voltage
open collector
-
7
V
I C
collector current (DC)
-
1
A
I CM
peak collector current
-
1.5
A
I BM
peak base current
-
200
mA
P tot
total power dissipation
T case £ 45 ° C
-
3.7
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
175
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
in free air
200
K/W
R th j-c
thermal resistance from junction to case
35
K/W
1997 May 12
3
22885722.014.png
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
CHARACTERISTICS
T amb =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =60V
-
10
100
nA
I E = 0; V CB =60V; T j = 150 ° C
-
10
100
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
-
100
nA
h FE
DC current gain
I C = 100
m
A; V CE =1V
BC140-10; BC141-10
-
40
-
BC140-16; BC141-16
-
90
-
h FE
DC current gain
I C = 100 mA; V CE =1V
BC140-10; BC141-10
63
100
160
BC140-16; BC141-16
100
160
250
h FE
DC current gain
I C = 1 A; V CE =1V
BC140-10; BC141-10
-
20
-
BC140-16; BC141-16
-
30
-
V CEsat
collector-emitter saturation voltage I C = 1 A; I B = 100 mA
-
0.6
1
V
V BE
base-emitter voltage
I C = 1 A; V CE =1V
-
1.2
1.8
V
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
-
25
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
-
80
pF
f T
transition frequency
I C = 50 mA; V CE = 10 V; f = 100 MHz 50
-
-
MHz
Switching times (between 10% and 90% levels)
t on
turn-on time
I Con = 100 mA; I Bon = 5 mA;
I Boff =
-
-
250
ns
t off
turn-off time
-
5mA
-
-
850
ns
1997 May 12
4
22885722.015.png
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
j
a
seating plane
B
w
M
A
M B M
1
b
k
D 1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
b
D
D 1
j
k
L
w
a
mm
6.60
6.35
5.08
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2 45 °
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT5/11
TO-39
97-04-11
1997 May 12
5
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