BUK475-100A-B_1.pdf

(72 KB) Pobierz
22889733 UNPDF
Philips Semiconductors
Product specification
Isolated version of BUK455-100A/B
BUK475-100A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope. The
BUK475
-100A -100B
device is intended for use in Switched
V DS
Drain-source voltage
100
100
V
Mode Power Supplies (SMPS),
I D
Drain current (DC)
14
12
A
motor control, welding, DC/DC and
P tot
Total power dissipation
30
30
W
AC/DC converters, and in general
T j
Junction temperature
150
150
˚C
purpose switching applications.
R DS(ON)
Drain-source on-state
0.08
0.1
W
resistance
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
d
case
1
gate
2
drain
3
source
g
case isolated
12 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
100
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
100
V
±
V GS
Gate-source voltage
-
-
30
V
-100A
-100B
I D
Drain current (DC)
T hs = 25 ˚C
-
14
12
A
I D
Drain current (DC)
T hs = 100 ˚C
-
8.7
7.5
A
I DM
Drain current (pulse peak value) T hs = 25 ˚C
-
56
48
A
P tot
Total power dissipation
T hs = 25 ˚C
-
30
W
T stg
Storage temperature
-
- 55
150
˚C
T j
Junction temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to with heatsink compound
-
-
4.17 K/W
heatsink
R th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
November 1996
1
Rev 1.200
PowerMOS transistor
22889733.006.png 22889733.007.png 22889733.008.png 22889733.009.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA
100
-
-
V
voltage
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
2.1
3.0
4.0
V
I DSS
Zero gate voltage drain current V DS = 100 V; V GS = 0 V; T j = 25 ˚C
-
1
10
A
m
I DSS
Zero gate voltage drain current V DS = 100 V; V GS = 0 V; T j =125 ˚C
-
0.1
1.0
mA
I GSS
Gate source leakage current
V GS =
±
30 V; V DS = 0 V
-
10
100
nA
R DS(ON)
Drain-source on-state
V GS = 10 V;
BUK475-100A
-
0.07 0.08
W
resistance
I D = 13 A
BUK475-100B
-
0.08
0.1
W
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fs
Forward transconductance
V DS = 25 V; I D = 13 A
7.0
13.5
-
S
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
1650 2000
pF
C oss
Output capacitance
-
350
500
pF
C rss
Feedback capacitance
-
100
150
pF
t d on
Turn-on delay time
V DD = 30 V; I D = 3 A;
-
15
30
ns
t r
Turn-on rise time
V GS = 10 V; R GS = 50
W
;
-
25
40
ns
t d off
Turn-off delay time
R gen = 50
W
-
100
160
ns
t f
Turn-off fall time
-
50
80
ns
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
-
14
A
current
I DRM
Pulsed reverse drain current
-
-
-
56
A
V SD
Diode forward voltage
I F = 14 A ; V GS = 0 V
-
1.3
1.7
V
t rr
Reverse recovery time
I F = 14 A; -dI F /dt = 100 A/
m
s;
-
90
-
ns
Q rr
Reverse recovery charge
V GS = 0 V; V R = 30 V
-
0.70
-
m
C
November 1996
2
Rev 1.200
22889733.001.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
AVALANCHE LIMITING VALUE
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
W DSS
Drain-source non-repetitive
I D = 26 A ; V DD
£
50 V ;
-
-
100
mJ
unclamped inductive turn-off
V GS = 10 V ; R GS = 50
W
energy
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
100
ID / A
BUK445-100A,B
with heatsink compound
A
B
tp = 10 us
100 us
10
1 ms
1
DC
10 ms
100 ms
0.1
0
20
40
60
80
100 120 140
1
10
100
1000
Ths / C
VDS / V
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T hs )
Fig.3. Safe operating area. T hs = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
ID%
Normalised Current Derating
Zth / (K/W)
BUKx45-lv
10
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
D =
1
0.5
0.2
0.1
0.05
0.02
0.1
0.01
0
P
D
t p
D =
T
T
t
0.001
0
20
40
60
80
100 120 140
1E-07
1E-05
1E-03
1E-01
1E+01
Ths / C
t / s
Fig.2. Normalised continuous drain current.
ID% = 100
×
I D /I D 25 ˚C = f(T hs ); conditions: V GS
³
10 V
Fig.4. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
November 1996
3
Rev 1.200
t p
22889733.002.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
ID / A
BUK455-100A
gfs / S
BUK455-100A
50
20
15
15
8
7
10
40
30
10
VGS / V =
6
20
5
10
5
0
4
0
0
2
4
6
8
10
0
20
40
VDS / V
ID / A
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
Fig.8. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
0.5
RDS(ON) / Ohm
BUK455-100A
2.0
a
Normalised RDS(ON) = f(Tj)
4.5 5
5.5
0.4
6
1.5
VGS / V =
0.3
6.5
1.0
7
0.2
7.5
0.1
10
20
0.5
0
0
0
20
40
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
ID / A
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
Fig.9. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 13 A; V GS = 10 V
ID / A
BUK455-100A
VGS(TO) / V
50
max.
Tj / C =
25
150
4
40
3
typ.
30
min.
2
20
10
1
0
0
0
2
4
6
8
10
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
VGS / V
Fig.7. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.10. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
November 1996
4
Rev 1.200
22889733.003.png 22889733.004.png
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
1E-01
ID / A
SUB-THRESHOLD CONDUCTION
60
IF / A
BUK455-100A
1E-02
50
1E-03
2 %
typ
98 %
40
30
1E-04
Tj / C = 150
25
20
1E-05
10
1E-06
0
0
1
2
3
4
0
1
2
VGS / V
VSDS / V
Fig.11. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
Fig.14. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
10000
C / pF
BUK4y5-100
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
Ciss
1000
Coss
100
Crss
10
0
20
40
20
40
60
80
100
120
140
VDS / V
Ths / C
Fig.12. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
W DSS % = f(T hs ); conditions: I D = 26 A
12
VGS / V
BUK455-100
+
VDD
10
VDS / V =20
L
8
80
VDS
-
6
VGS
-ID/10 0
4
0
T.U.T.
2
RGS
R 01
shunt
0
0
10
20
30
QG / nC
Fig.16. Avalanche energy test circuit.
Fig.13. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 26 A; parameter V DS
W DSS = 0.5 × LI 2
× BV DSS /( BV DSS - V DD )
November 1996
5
Rev 1.200
22889733.005.png

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin