tda1015.pdf

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131546187 UNPDF
INTEGRATED CIRCUITS
DATA SHEET
TDA1015
1 to 4 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
131546187.003.png
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 W load impedance. The
very low applicable supply voltage of 3,6 V permits 6 V applications.
Special features are:
·
single in-line (SIL) construction for easy mounting
·
separated preamplifier and power amplifier
·
high output power
·
thermal protection
·
high input impedance
·
low current drain
·
limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range
V P
3,6 to 18
V
Peak output current
I OM
max. 2,5
A
Output power at d tot = 10%
V P = 12 V; R L = 4
W
P o
typ. 4,2
W
V P = 9 V; R L = 4 W
P o
typ. 2,3
W
V P = 6 V; R L = 4
W
P o
typ. 1,0
W
Total harmonic distortion at P o = 1 W; R L = 4
W
d tot
typ. 0,3
%
Input impedance
preamplifier (pin 8)
|Z i |
>
100
k W
power amplifier (pin 6)
|Z i |
typ. 20
k
W
Total quiescent current
I tot
typ. 14
mA
Operating ambient temperature
T amb
-
25 to + 150
°
C
Storage temperature
T stg
- 55 to + 150
° C
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.
November 1982
2
131546187.004.png 131546187.005.png
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
November 1982
3
131546187.006.png
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
RATINGS
Limiting values in accordance with Absolute Maximum System (IEC 134)
Supply voltage
V P
max.
18
V
Peak output current
I OM
max.
2,5
A
Total power dissipation
see derating curve Fig.2
Storage temperature
T stg
-
55 to + 150
°
C
Operating ambient temperature
T amb
-
25 to + 150
°
C
A.C. short-circuit duration of load
during sine-wave drive; V P = 12 V
t sc
max.
100 hours
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume V P = 12 V; R L = 4
W
; T amb = 45
°
C maximum.
The maximum sine-wave dissipation is 1,8 W.
R th j-a =R th j-tab +R th tab-h +R th h-a =
150 45
–
1 ,
= 58 K/W.
Where R th j-a of the package is 45 K/W, so no external heatsink is required.
November 1982
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----------------------
131546187.001.png
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
D.C. CHARACTERISTICS
Supply voltage range
V P
3,6 to 18
V
Repetitive peak output current
I ORM
<
2
A
Total quiescent current at V P = 12 V
I tot
typ.
14
mA
<
25
mA
A.C. CHARACTERISTICS
T amb = 25
C; V P = 12 V; R L = 4
W
; f = 1 kHz unless otherwise specified; see also Fig.3.
A.F. output power at d tot = 10% (note 1)
with bootstrap:
V P = 12 V; R L = 4
W
P o
typ.
4,2
W
V P = 9 V; R L = 4 W
P o
typ.
2,3
W
V P = 6 V; R L = 4
W
P o
typ.
1,0
W
without bootstrap:
V P = 12 V; R L = 4
W
P o
typ.
3,0
W
Voltage gain:
preamplifier (note 2)
G v1
typ.
23
dB
power amplifier
G v2
typ.
29
dB
total amplifier
G v tot
typ.
52
dB
49 to 55
dB
Total harmonic distortion at P o = 1,5 W
d tot
typ.
0,3
%
<
1,0
%
Frequency response;
-
3 dB (note 3)
B
60 Hz to 15
kHz
Input impedance:
preamplifier (note 4)
|Z i1 |
>
100
k
W
typ.
200
k
W
power amplifier
|Z i2 |
typ.
20
k
W
Output impedance preamplifier
|Z o1 |
typ.
1
k W
Output voltage preamplifier (r.m.s. value); d tot < 1% (note 2)
V o(rms)
typ.
0,8
V
Noise output voltage (r.m.s. value; note 5)
R S = 0
W
V n(rms)
typ.
0,2
mV
R S = 10 k W
V n(rms)
typ.
0,5
mV
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; R S = 0
W
V n(rms)
typ.
8
m
V
Ripple rejection (note 6); f = 100 Hz
RR
typ.
38
dB
November 1982
5
°
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