BT258_SERIES.pdf

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Philips Semiconductors
Product specification
Thyristors
BT258 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose
BT258- 500R 600R 800R
switching and phase control
V DRM ,
Repetitive peak off-state
500
600
800
V
applications. These devices are
V RRM
voltages
intended to be interfaced directly to
I T(AV)
Average on-state current
5
5
5
A
microcontrollers, logic integrated
I T(RMS)
RMS on-state current
8
8
8
A
circuits and other low power gate
I TSM
Non-repetitive peak on-state
75
75
75
A
trigger circuits.
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
cathode
a
k
2
anode
3
gate
g
tab anode
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
V DRM , V RRM Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(AV)
Average on-state current half sine wave; T mb
£
111 ˚C
-
5
A
I T(RMS)
RMS on-state current
all conduction angles
-
8
A
I TSM
Non-repetitive peak
half sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 10 ms
-
75
A
t = 8.3 ms
-
82
A
I 2 t
I 2 t for fusing
t = 10 ms
-
28
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 10 A; I G = 50 mA;
-
50
A/
m
s
on-state current after
dI G /dt = 50 mA/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125 2
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
W
or less.
October 1997
1
Rev 1.200
logic level
s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k
22887577.005.png
Philips Semiconductors
Product specification
Thyristors
BT258 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
-
-
2.0
K/W
junction to mounting base
R th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
-
50
200
m
A
I L
Latching current
V D = 12 V; I GT = 0.1 A
-
0.4
10
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
0.3
6
mA
V T
On-state voltage
I T = 16 A
-
1.3
1.5
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.4
1.5
V
V D = V DRM(max) ; I T = 0.1 A; T j = 110 ˚C
0.1
0.2
-
V
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
50
100
-
V/
m
s
off-state voltage
exponential waveform; R GK = 100
W
t gt
Gate controlled turn-on
I TM = 10 A; V D = V DRM(max) ; I G = 5 mA;
-
2
-
m
s
time
dI G /dt = 0.2 A/
m
s
t q
Circuit commutated
V D = 67% V DRM(max) ; T j = 125 ˚C;
-
100
-
m
s
turn-off time
I TM = 12 A; V R = 24 V; dI TM /dt = 10 A/
m
s;
dV D /dt = 2 V/
m
s; R GK = 1 k
W
October 1997
2
Rev 1.200
logic level
22887577.006.png
Philips Semiconductors
Product specification
Thyristors
BT258 series
8
Ptot / W
BT150
Tmb(max) / C
109
80
ITSM / A
BT258
conduction
angle
form
factor
a = 1.57
I TSM
7
111
70
degrees
30
60
90
120
180
a
1.9
T
4
2.8
2.2
1.9
1.57
6
2.2
113
60
T
Tj initial = 25 C max
time
5
115
50
2.8
4
4
117
40
3
119
30
2
121
20
1
123
10
0
125
0
0
1
2
3
4
5
6
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
BT150
24
IT(RMS) / A
BT150
20
dI /dt limit
T
16
100
12
I
T
I TSM
8
T
time
4
Tj initial = 25 C max
10us
100us
1ms
10ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
111˚C.
IT(RMS) / A
BT258
VGT(Tj)
VGT(25 C)
9
BT151
1.6
8
111 C
7
1.4
6
1.2
5
4
1
3
0.8
2
1
0.6
0
-50
0
50
100
150
0.4
-50
0
50
100
150
Tmb / C
Tj / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
October 1997
3
Rev 1.200
logic level
I
10
0
22887577.007.png 22887577.008.png
Philips Semiconductors
Product specification
Thyristors
BT258 series
IGT(Tj)
IGT(25 C)
30
IT / A
BT150+
BT150
3
Tj = 125 C
Tj = 25 C
25
2.5
Vo = 0.99 V
Rs = 0.0325 ohms
typ
20
max
2
1.5
15
1
10
0.5
5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT150
BT150
3
2.5
1
2
1.5
1
0.1
P
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
IH(Tj)
IH(25 C)
1000
dVD/dt (V/us)
BT150
3
2.5
RGK = 100 ohms
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
October 1997
4
Rev 1.200
logic level
D
22887577.001.png
Philips Semiconductors
Product specification
Thyristors
BT258 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x )
123
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
logic level
22887577.002.png 22887577.003.png 22887577.004.png

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