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Philips Semiconductors
Product specification
logic level
BT136 series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose
BT136- 500D 600D
bidirectional switching and phase
V
DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I
T(RMS)
RMS on-state current
4
4
A
are intended to be interfaced directly
I
TSM
Non-repetitive peak on-state current
25
25
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
tab
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb
£
107 ˚C
-
4
A
I
TSM
Non-repetitive peak
full sine wave; T
j
= 25 ˚C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2
t
I
2
t for fusing
t = 10 ms
-
3.1
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 6 A; I
G
= 0.2 A;
on-state current after
dI
G
/dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
m
s.
August 1997
1
Rev 1.200
Triacs
Philips Semiconductors
Product specification
logic level
BT136 series D
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
3.0
K/W
junction to mounting base half cycle
-
-
3.7
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
2.0
5
mA
T2+ G-
-
2.5
5
mA
T2- G-
-
2.5
5
mA
T2- G+
-
5.0
10
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
1.6
10
mA
T2+ G-
-
4.5
15
mA
T2- G-
-
1.2
10
mA
T2- G+
-
2.2
15
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
1.2
10
mA
V
T
On-state voltage
I
T
= 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
0.25
0.4
-
V
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
-
5
-
V/
m
s
off-state voltage
exponential waveform; R
GK
= 1 k
W
t
gt
Gate controlled turn-on
I
TM
= 6 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
-
2
-
m
s
time
dI
G
/dt = 5 A/
m
s
August 1997
2
Rev 1.200
Triacs
Philips Semiconductors
Product specification
logic level
BT136 series D
Ptot / W
BT136
Tmb(max) / C
5
IT(RMS) / A
BT136
8
101
7
104
107 C
4
= 180
120
90
60
30
6
107
1
5
110
3
4
113
3
116
2
2
119
1
1
122
0
0
1
2
3
4
125
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
a
= conduction angle.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
1000
ITSM / A
BT136
12
IT(RMS) / A
BT136
I
T
I
TSM
10
T
time
Tj initial = 25 C max
8
100
6
dI /dt limit
T
4
T2- G+ quadrant
2
10
0
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
£
107˚C.
30
ITSM / A
BT136
VGT(Tj)
VGT(25 C)
BT136
1.6
I
T
I
TSM
25
1.4
T
time
20
Tj initial = 25 C max
1.2
15
1
10
0.8
5
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
August 1997
3
Rev 1.200
Triacs
5
0
Philips Semiconductors
Product specification
logic level
BT136 series D
IGT(Tj)
IGT(25 C)
12
IT / A
Tj = 125 C
Tj = 25 C
BT136
BT136D
3
T2+ G+
T2+ G-
T2- G-
T2- G+
10
typ
max
2.5
Vo = 1.27 V
Rs = 0.091 ohms
8
2
1.5
6
1
4
0.5
2
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT136
TRIAC
3
unidirectional
2.5
bidirectional
1
2
1.5
1
0.1
P
t
p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
TRIAC
3
2.5
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
August 1997
4
Rev 1.200
Triacs
D
Philips Semiconductors
Product specification
logic level
BT136 series D
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x
)
123
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1997
5
Rev 1.200
Triacs
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