BRY56.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BRY56
Programmable unijunction
transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 21
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Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
DESCRIPTION
PINNING
Planar PNPN trigger device in a
TO-92; SOT54 plastic package.
PIN
DESCRIPTION
1
gate
2
anode
APPLICATIONS
·
3
cathode
Switching applications such as:
– Motor control
– Oscillators
– Relay replacement
– Timers
– Pulse shapers, etc.
handbook, halfpage
anode
a
1
2
3
g
gate
MSB033
k
cathode
MGL167
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V GA
gate-anode voltage
-
70
V
I A(AV)
average anode current
-
175
mA
P tot
total power dissipation
T amb £ 75 ° C
-
300
mW
T j
operating junction temperature
-
150
°
C
I P
peak point current
V S = 10 V; R G =10k
W
-
0.2
m
A
I V
valley point current
V S = 10 V; R G =10k
W
2
-
m
A
1997 Jul 21
2
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Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V GA
gate-anode voltage
-
70
V
I A(AV)
average anode current
-
175
mA
I ARM
repetitive peak anode current
t p =10 m s; d = 0.01
-
2.5
A
I ASM
non-repetitive peak anode current t p =10
m
s
-
3
A
dl A /dt
rate of rise of anode current
I A £
2.5 A
-
20
A/
m
s
P tot
total power dissipation
T amb £
75
°
C
-
300
mW
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient in free air
250
K/W
CHARACTERISTICS
T amb =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I P
peak point current
V S = 10 V; R G =10k W ; see Fig.7
-
-
200
nA
V S = 10 V; R G = 100 k
W
; see Fig.7
-
-
60
nA
I V
valley point current
V S = 10 V; R G =10k
W
; see Fig.7
2
-
-
m
A
V S = 10 V; R G = 100 k
W
; see Fig.7 1
-
-
m
A
V offset
offset voltage
typical curve; I A = 0; see Fig.7
-
V P - V S
-
V
I GAO
gate-anode leakage current
I K = 0; V GA = 70 V; see Fig.5
-
-
10
nA
I GKS
gate-cathode leakage current
V AK = 0; V KG = 70 V; see Fig.6
-
-
100
nA
V AK
anode-cathode voltage
I A = 100 mA
-
-
1.4
V
V OM
peak output voltage
V AA = 20 V; C = 10 nF;
see Figs 8 and 9
6
-
-
V
t r
rise time
V AA = 20 V; C = 10 nF; see Fig.9
-
-
80
ns
1997 Jul 21
3
11011188.086.png
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
handbook, full pagewidth
+
40 V
5 k
W
BZY88-
C8V2
R1
A
100 m F
40 K
BY206
(2x)
750
W
1 nF
R G
D.U.T
10 k
20
W
osc.
V S
MBK189
I P and I V determined by value of R1.
R1
=
1
I A
; i.e. maximum voltage drop over R1 = 1 V.
Internal resistance of oscilloscope = 10 M
W
.
Fig.2 Measuring circuit for peak and valley point currents.
handbook, halfpage
+ V B
handbook, halfpage
I A
R2
R G =
R 1 R 2
R 1
R 2
DUT
V AK
R 1
V S =
V B
R1
DUT
R 1
R 2
MBB699
MEA141
Fig.3 BRY56 with ‘program’ resistors R1 and R2.
Fig.4 Equivalent test circuit for
characteristics testing.
1997 Jul 21
4
W
----
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Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56
handbook, halfpage
DUT
handbook, halfpage
I GKS
DUT
I GAO
V GA
V GK
MBB697
MBB696
Fig.5 Equivalent test circuit for gate-anode
leakage current.
Fig.6 Equivalent test circuit for gate-cathode
leakage current.
handbook, halfpage
handbook, halfpage
V AA
3.3
M
16 k
½
DUT
I (V)
C
V O
20
½
27 k
½
I (P)
V S V (P)
V AK
MEA143
MBB698
Fig.7 Offset voltage.
Fig.8 Test circuit for peak output voltage.
1997 Jul 21
5
I A
½
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