AF4407P.pdf

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P-Channel 30-V (D-S) MOSFET
AF4407P
Features
General Description
-Low r DS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended V GS range (±25) for battery pack
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
V DS (V)
r DS(on) (mΩ)
I D (A)
-30
9@V GS =-10V
-15
13@V GS =-4.5V
-11
Pin Assignments
Pin Descriptions
1
8
Pin Name
Description
S
D
S
Source
S
2
7
D
G
Gate
S
3
6
D
D
Drain
G
4
5
D
SOP-8
Ordering information
A X 4407P X X X
Feature
PN
Package
Lead Free
Blank : Normal
L : Lead Free Package
Packing
F :MOSFET
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
1/5
Rev. 1.0 Jul 16, 2004
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P-Channel 30-V (D-S) MOSFET
AF4407P
Absolute Maximum Ratings (T A =25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
V DS
Drain-Source Voltage
-30
V
V GS
Gate-Source Voltage
±25
V
I D
Continuous Drain Current (Note 1) T A =70ºC
T A =25ºC
-15
A
-11
I DM
Pulsed Drain Current (Note 2)
±50
A
I S
Continuous Source Current (Diode Conduction) (Note 1)
-2.1
A
T A =25ºC
3.1
P D
Power Dissipation (Note 1)
W
T A =70ºC
2.3
T J , T STG Operating and Storage Junction Temperature Range
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R θJC
Maximum Junction-to-Case (Note 1)
t < = 5 sec
25
ºC/W
R θJA
Maximum Junction-to-Ambient (Note 1)
t < = 5 sec
50
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T A =25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Limits
Unit
Min.
Typ. Max.
Static
V (BR)DSS Drain-Source breakdown Voltage
V GS =0V, I D =-250uA
-30
-
-
V
V GS(th) Gate-Threshold Voltage
V DS = V GS , I D =-250uA
-1
-1.6
-3
V
I GSS
Gate-Body Leakage
V DS =0V, V GS =±25V
-
-
±100
nA
V DS =-24V, V GS =0V
-
-
-1
I DSS
Zero Gate Voltage Drain Current
V DS =-24V, V GS =0V,
T J =55ºC
uA
-
-
-5
I D(on)
On-State Drain Current (Note 3)
V GS =-5V, V DS =-10V
-50
-
-
A
V GS =-10V, I D =-13A
-
7.3
9
r DS(on) Drain-Source On-Resistance (Note 3)
V GS =-4.5V, I D =-11A
-
10
13
mΩ
V GS =-10V, I D =-13A,
T J =55ºC
-
9
11
g fs
Forward Tranconductance (Note 3) GS =-5V, I D =-13A
-
44
-
S
V SD
Diode Forward Voltage
I S =2.1A, V GS =0V
-
-0.7
-1.2
V
Dynamic (Note 4)
Q g
Total Gate Charge
V DS =-15V, V GS =-10V,
I D =-13A
-
71
100
Q gs
Gate-Source Charge
-
12
-
nC
Q gd
Gate-Drain Charge
-
15
-
Switching
t d(on)
Turn-On Delay Time
-
19
36
t r
Rise Time
V DD =-15V, R L =6Ω,
ID=-1A, VGEN=-10V
-
11
21
nS
t d(off)
Turn-Off Delay Time
-
121
186
t f
Fall-Time
-
68
112
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
2/5
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P-Channel 30-V (D-S) MOSFET
AF4407P
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation
With Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
With Source Current and Temperature
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
3/5
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P-Channel 30-V (D-S) MOSFET
AF4407P
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction To Ambient
Figure 11. Transient Thermal Response Curve
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
4/5
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P-Channel 30-V (D-S) MOSFET
AF4407P
Marking Information
SOP-8L
( Top View )
8
Logo
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Part Number
4 4 0 7 P
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SOP-8L
L
VIEW "A "
D
0.015x45
7 (4X)
7 (4X)
e
B
VIEW "A"
y
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
1.40
1.60
1.75
0.055
0.063
0.069
A1
0.10
-
0.25
0.040
-
0.100
A2
1.30
1.45
1.50
0.051
0.057
0.059
B
0.33
0.41
0.51
0.013
0.016
0.020
C
0.19
0.20
0.25
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
-
1.27
-
-
0.050
-
H
5.79
5.99
6.20
0.228
0.236
0.244
L
0.38
0.71
1.27
0.015
0.028
0.050
y
-
-
0.10
-
-
0.004
θ
0 O
-
8 O
0 O
-
8 O
Anachip Corp.
www.anachip.com.tw Rev. 1.0 Jul 16, 2004
5/5
Lot code:
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