2SC5096.pdf
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2SC5096
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.8dB, |S
21e
|
2
= 7.5dB (f = 2 GHz)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
10
V
Emitter-base voltage
V
EBO
1.5
V
Base current
I
B
7
mA
Collector current
I
C
15
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
−
55~125
°C
JEDEC ―
JEITA
―
TOSHIBA
2-2H1A
Microwave Characteristics
(Ta
=
25°C)
Weight: 2.4 mg (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f
T
V
CE
=
6 V, I
C
=
7 mA
7
10
GHz
Insertion gain
S
21e
2
(1)
V
CE
=
6 V, I
C
=
7 mA, f
=
1 GHz
13
dB
S
21e
2
(2)
V
CE
=
6 V, I
C
=
7 mA, f
=
2 GHz
4.5
7.5
Noise figure
NF (1)
V
CE
=
6 V, I
C
=
3 mA, f
=
1 GHz
1.4
dB
NF (2)
V
CE
=
6 V, I
C
=
3 mA, f
=
2 GHz
1.8
3.0
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Emitter cut-off current
I
EBO
EB
=
1 V, I
C
=
0
1
µ
A
DC current gain
h
FE
(Note 1)
V
CE
=
6 V, I
C
=
7 mA
50
160
Output capacitance
C
ob
0.5
pF
V
CB
=
10 V, I
E
=
0, f
=
1 MHz (Note 2)
Reverse transfer capacitance
C
re
0.4
0.85
pF
Note 1: h
FE
classification R: 50~100, O: 80~160
Note 2: C
re
is measured by 3 terminal method with capacitance bridge.
1
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2SC5096
Marking
2
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2SC5096
3
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2SC5096
S-Parameter Z
O
=
50
Ω
, Ta
=
25°C
V
CE
=
6 V, I
C
=
3 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.835
−
26.1
7.069
150.4
0.046
71.0
0.899
−
19.3
400
0.665
−
46.5
5.948
130.4
0.076
60.5
0.745
−
30.3
600
0.501
−
62.7
5.021
115.2
0.095
55.7
0.630
−
35.9
800
0.386
−
74.3
4.173
104.3
0.111
53.7
0.552
−
38.5
1000
0.297
−
83.7
3.592
95.6
0.124
53.2
0.500
−
39.9
1200
0.226
−
92.7
3.140
88.5
0.137
53.6
0.465
−
41.1
1400
0.175
−
101.9
2.808
82.3
0.152
54.1
0.442
−
42.2
1600
0.130
−
113.4
2.514
76.6
0.165
54.2
0.421
−
43.8
1800
0.103
−
128.0
2.293
71.7
0.179
53.9
0.405
−
45.7
2000
0.081
−
147.4
2.114
67.3
0.193
54.8
0.388
−
47.4
V
CE
=
6 V, I
C
=
7 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.668
−
40.0
12.306
138.9
0.040
67.3
0.786
−
27.0
400
0.427
−
64.4
8.852
116.1
0.061
61.6
0.579
−
35.0
600
0.280
−
79.5
6.591
102.9
0.078
61.8
0.476
−
35.9
800
0.193
−
89.7
5.191
94.3
0.096
62.5
0.420
−
35.0
1000
0.134
−
99.3
4.288
87.8
0.112
63.2
0.390
−
34.2
1200
0.088
−
112.3
3.661
81.9
0.130
63.8
0.374
−
34.0
1400
0.056
−
129.8
3.232
76.9
0.150
63.4
0.366
−
34.8
1600
0.035
−
169.0
2.857
72.1
0.168
62.5
0.356
−
36.6
1800
0.040
157.0
2.574
68.1
0.185
61.4
0.347
−
39.0
2000
0.054
131.5
2.363
64.3
0.203
61.3
0.338
−
40.2
4
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2SC5096
5
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