2SC5096.pdf

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2SC5096
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.8dB, |S 21e | 2 = 7.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
20
V
Collector-emitter voltage
V CEO
10
V
Emitter-base voltage
V EBO
1.5
V
Base current
I B
7
mA
Collector current
I C
15
mA
Collector power dissipation
P C
100
mW
Junction temperature
T j
125
°C
Storage temperature range
T stg
55~125
°C
JEDEC ―
JEITA
TOSHIBA
2-2H1A
Microwave Characteristics (Ta = 25°C)
Weight: 2.4 mg (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f T
V CE = 6 V, I C = 7 mA
7
10
GHz
Insertion gain
S 21e 2 (1) V CE = 6 V, I C = 7 mA, f = 1 GHz
13
dB
S 21e 2 (2) V CE = 6 V, I C = 7 mA, f = 2 GHz
4.5
7.5
Noise figure
NF (1)
V CE = 6 V, I C = 3 mA, f = 1 GHz
1.4
dB
NF (2)
V CE = 6 V, I C = 3 mA, f = 2 GHz
1.8
3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 10 V, I E = 0
1 µ A
Emitter cut-off current
I EBO
EB = 1 V, I C = 0
1 µ A
DC current gain
h FE
(Note 1)
V CE = 6 V, I C = 7 mA
50
160
Output capacitance
C ob
0.5
pF
V CB = 10 V, I E = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance
C re
0.4
0.85
pF
Note 1: h FE classification R: 50~100, O: 80~160
Note 2: C re is measured by 3 terminal method with capacitance bridge.
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Marking
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S-Parameter Z O = 50 , Ta = 25°C
V CE = 6 V, I C = 3 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.835
26.1
7.069
150.4
0.046
71.0
0.899
19.3
400
0.665
46.5
5.948
130.4
0.076
60.5
0.745
30.3
600
0.501
62.7
5.021
115.2
0.095
55.7
0.630
35.9
800
0.386
74.3
4.173
104.3
0.111
53.7
0.552
38.5
1000
0.297
83.7
3.592
95.6
0.124
53.2
0.500
39.9
1200
0.226
92.7
3.140
88.5
0.137
53.6
0.465
41.1
1400
0.175
101.9
2.808
82.3
0.152
54.1
0.442
42.2
1600
0.130
113.4
2.514
76.6
0.165
54.2
0.421
43.8
1800
0.103
128.0
2.293
71.7
0.179
53.9
0.405
45.7
2000
0.081
147.4
2.114
67.3
0.193
54.8
0.388
47.4
V CE = 6 V, I C = 7 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.668
40.0
12.306
138.9
0.040
67.3
0.786
27.0
400
0.427
64.4
8.852
116.1
0.061
61.6
0.579
35.0
600
0.280
79.5
6.591
102.9
0.078
61.8
0.476
35.9
800
0.193
89.7
5.191
94.3
0.096
62.5
0.420
35.0
1000
0.134
99.3
4.288
87.8
0.112
63.2
0.390
34.2
1200
0.088
112.3
3.661
81.9
0.130
63.8
0.374
34.0
1400
0.056
129.8
3.232
76.9
0.150
63.4
0.366
34.8
1600
0.035
169.0
2.857
72.1
0.168
62.5
0.356
36.6
1800
0.040
157.0
2.574
68.1
0.185
61.4
0.347
39.0
2000
0.054
131.5
2.363
64.3
0.203
61.3
0.338
40.2
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