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2SC1815
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
High voltage and high current: V CEO = 50 V (min),
C = 150 mA (max)
Excellent h FE linearity: h FE (2) = 100 (typ.)
at V CE = 6 V, I C = 150 mA
: h FE (I C = 0.1 mA)/h FE (I C = 2 mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Maximum Ratings (Ta
25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
60
V
Collector-emitter voltage
V CEO
50
V
Emitter-base voltage
V EBO
5
V
JEDEC
TO-92
Collector current
I C
150
mA
JEITA
SC-43
Base current
I B
50
mA
TOSHIBA
2-5F1B
Collector power dissipation
P C
400
mW
Weight: 0.21 g (typ.)
Junction temperature
T j
125
°C
Storage temperature range
T stg
55~125
°C
Electrical Characteristics (Ta
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
CB
60 V, I E
0
0.1
A
Emitter cut-off current
I EBO
EB
5 V, I C
0
0.1
A
h FE (1)
(Note)
V CE
6 V, I C
2 mA
70
700
DC current gain
h FE (2)
CE
6 V, I C
150 mA
25
100
Collector-emitter saturation voltage
V CE (sat) I C
100 mA, I B
10 mA
0.1
0.25
V
Base-emitter saturation voltage
V BE (sat) I C
100 mA, I B
10 mA
1.0
V
Transition frequency
f T
V CE
10 V, I C
1 mA
80
MHz
Collector output capacitance
C ob
CB
10 V, I E
0, f
1 MHz
2.0
3.5
pF
Base intrinsic resistance
r bb’
V CE
10 V, I E
1 mA
50
f
30 MHz
Noise figure
NF
V CE
6 V, I C
0.1 mA
1.0
10
dB
f
1 kHz, R G
10 k
Note: h FE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
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2SC1815
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
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