LM385.PDF

January 1995

LM185-1.2/LM285-1.2/LM385-1.2

Micropower Voltage Reference Diode

General Description

The LM185-1.2/LM285-1.2/LM385-1.2 are micropower

2-terminal band-gap voltage regulator diodes. Operating

over a 10 m A to 20 mA current range, they feature excep-

tionally low dynamic impedance and good temperature sta-

bility. On-chip trimming is used to provide tight voltage toler-

ance. Since the LM185-1.2 band-gap reference uses only

transistors and resistors, low noise and good long term sta-

bility result.

Careful design of the LM185-1.2 has made the device ex-

ceptionally tolerant of capacitive loading, making it easy to

use in almost any reference application. The wide dynamic

operating range allows its use with widely varying supplies

with excellent regulation.

The extremely low power drain of the LM185-1.2 makes it

useful for micropower circuitry. This voltage reference can

be used to make portable meters, regulators or general pur-

pose analog circuitry with battery life approaching shelf life.

Further, the wide operating current allows it to replace older

references with a tighter tolerance part.

The LM185-1.2 is rated for operation over a b 55 § Cto

125 § C temperature range while the LM285-1.2 is rated

b 40 § Cto85 § C and the LM385-1.2 0 § Cto70 § C. The LM185-

1.2/LM285-1.2 are available in a hermetic TO-46 package

and the LM285-1.2/LM385-1.2 are also available in a low-

cost TO-92 molded package, as well as S.O. The LM185-

1.2 is also available in a hermetic leadless chip carrier pack-

age.

Features

Y g 4mV( g 0.3%) max. initial tolerance (A grade)

Y Operating current of 10 m Ato20mA

Y 0.6 X max dynamic impedance (A grade)

Y Low temperature coefficient

Y Low voltage referenceÐ1.235V

Y 2.5V device and adjustable device also available

Ð LM185-2.5 series and LM185 series, respectively

Connection Diagrams

TO-92

Plastic Package (Z)

TO-46

Metal Can Package (H)

SO Package

TL/H/5518±10

Bottom View

Order Number LM285Z-1.2,

LM285AZ-1.2, LM285AXZ-1.2,

LM285AYZ-1.2, LM285BXZ-1.2,

LM285BYZ-1.2, LM385Z-1.2,

LM385AZ-1.2, LM385AXZ-1.2,

LM385AYZ-1.2, LM385BZ-1.2,

LM385BXZ-1.2 or LM385BYZ-1.2

See NS Package Number Z03A

TL/H/5518±6

TL/H/5518±9

Order Number LM285M-1.2,

LM285AM-1.2, LM285AXM-1.2,

LM285AYM-1.2, LM285BXM-1.2,

LM285BYM-1.2, LM385M-1.2,

LM385AM-1.2, LM385AXM-1.2,

LM385AYM-1.2, LM385BM-1.2,

LM385BXM-1.2 or LM385BYM-1.2

See NS Package Number M08A

Bottom View

Order Number LM185H-1.2,

LM185H-1.2/883, LM185BXH-1.2,

LM185BYH-1.2/883, LM285H-1.2,

LM285BXH-1.2 or LM285BYH-1.2

See NS Package Number H02A

SO Package

Alternate Pinout

Typical Application

Wide Input

Range Reference

Order Number LM385SM-1.2,

LM385ASM-1.2 or LM385BSM-1.2

See NS Package Number M08A

TL/H/5518±11

TL/H/5518±8

C 1995 National Semiconductor Corporation

TL/H/5518

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

(Note 2)

Reverse Current

Storage Temperature

b 55 § Cto a 150 § C

30 mA

Soldering Information

TO-92 package: 10 sec. 260 § C

TO-46 package: 10 sec. 300 § C

SO package: Vapor phase (60 sec.) 215 § C

Infrared (15 sec.) 220 § C

See AN-450 ``Surface Mounting Methods and Their Effect

on Product Reliability'' for other methods of soldering sur-

face mount devices.

Forward Current

10 mA

Operating Temperature Range (Note 3)

LM185-1.2

b 55 § Cto a 125 § C

LM285-1.2

b 40 § Cto a 85 § C

LM385-1.2

0 § Cto70 § C

Electrical Characteristics (Note 4)

LM285A-1.2

LM385A-1.2

LM285AX-1.2

LM385AX-1.2

Parameter

Conditions

LM285AY-1.2

LM385AY-1.2

Units

(Limit)

Tested Design

Typ

Limit Limit Typ Limit Limit

(Notes 5, 8) (Note 6)

(Note 5) (Note 6)

Reverse Breakdown I R e 100 m A

1.235

1.231

1.235 1.231

V(Min)

Voltage

1.239

V(Max)

1.230

1.220 1.235

1.225 V(Min)

1.245

1.245 V(Max)

Minimum Operating

m A

Current

(Max)

Reverse Breakdown I MIN s I R s 1mA

1.5

1.5 mV

Voltage Change with

(Max)

Current

1mA s I R s 20 mA

20 mV

(Max)

Reverse Dynamic

I R e 100 m A, f e 20 Hz

0.2

0.6

0.2

0.6 X

Impedance

1.5

1.5 (Max)

Wideband Noise (rms) I R e 100 m A,

m V

10 Hz s f s 10 kHz

Long Term Stability

I R e 100 m A, T e 1000 Hr,

ppm

T A e 25 § C g 0.1 § C

Average Temperature I MIN s I R s 20 mA

Coefficient (Note 7)

X Suffix

ppm/ § C

Y Suffix

(Max)

All Others

150

Electrical Characteristics (Continued) (Note 4)

LM185-1.2

LM185BX-1.2

LM385B-1.2

LM185BY-1.2

LM385BX-1.2

LM385-1.2

LM285-1.2

LM385BY-1.2

Units

Parameter

Conditions

Typ LM285BX-1.2

(Limit)

LM285BY-1.2

Tested Design Tested Design Tested Design

Limit Limit Limit Limit Limit Limit

(Notes 5, 8) (Note 6) (Note 5) (Note 6) (Note 5) (Note 6)

Reverse Breakdown T A e 25 § C,

1.235

1.223

1.205

V(Min)

Voltage

10 m A s I R s 20 mA

1.247

1.260

V(Max)

Minimum Operating

20 15 20 15 20 m A

Current

(Max)

Reverse Breakdown 10 m A s I R s 1mA

1 1.5 1 1.5 1 1.5 mV

Voltage Change with

(Max)

Current

1mA s I R s 20 mA

20 20 25 20 25 mV

(Max)

Reverse Dynamic

I R e 100 m A, f e 20 Hz

Impedance

Wideband Noise (rms) I R e 100 m A,

10 Hz s f s 10 kHz

Long Term Stability I R e 100 m A, T e 1000 Hr,

m V

T A e 25 § C g 0.1 § C

Average Temperature I R e 100 m A

Coefficient (Note 7) X Suffix 30 30 ppm/ § C

Y Suffix 50 50 ppm/ § C

All Others 150 150 150 ppm/ § C

(Max)

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.

The guaranteed specifications apply only for the test conditions listed.

Note 2: Refer to RETS185H-1.2 for military specifications.

Note 3: For elevated temperature operation, T j max is:

LM185 150 § C

LM285 125 § C

LM385 100 § C

Thermal Resistance

ppm

TO-92

TO-46

SO-8

i JA (junction to ambient)

180 § C/W (0.4 × leads)

440 § C/W 165 § C/W

170 § C/W (0.125 × leads)

i JC (junction to case) N/A 80 § C/W N/A

Note 4: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T A e T J e 25 § C.

Note 5: Guaranteed and 100% production tested.

Note 6: Guaranteed, but not 100% production tested. These limits are not used to calculate average outgoing quality levels.

Note 7: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T MAX

and T MIN , divided by T MAX b T MIN . The measured temperatures are b 55 § C, b 40 § C, 0 § C, 25 § C, 70 § C, 85 § C, 125 § C.

Note 8: A military RETS electrical specification is available on request.

Typical Performance Characteristics

Reverse Characteristics

Forward Characteristics

Temperature Drift of 3

Representative Units

Reverse Dynamic Impedance

Noise Voltage

Filtered Output Noise

Response Time

TL/H/5518±3

Typical Applications (Continued)

Micropower Reference

from 9V Battery

Reference from

1.5V Battery

TL/H/5518±2

Micropower* 5V Regulator

Micropower* 10V Reference

*I Q j 20 m A standby current

*I Q j 30 m A

Precision 1 m A to 1 mA Current Sources

*I OUT e

1.23V

TL/H/5518±4

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika: