2N5550_2N5551.pdf

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NPN high-voltage transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5550; 2N5551
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 23
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Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
FEATURES
PINNING
·
Low current (max. 300 mA)
PIN
DESCRIPTION
·
High voltage (max. 160 V).
1
collector
2
base
APPLICATIONS
3
emitter
·
Switching and amplification in high voltage applications
such as telephony.
handbook, halfpag 1
2
1
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
3
2
3
MAM279
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
2N5550
-
160
V
2N5551
-
180
V
V CEO
collector-emitter voltage
open base
2N5550
-
140
V
2N5551
-
160
V
V EBO
emitter-base voltage
open collector
-
6
V
I C
collector current (DC)
-
300
mA
I CM
peak collector current
-
600
mA
I BM
peak base current
-
100
mA
P tot
total power dissipation
T amb £
25
°
C
-
630
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
1999 Apr 23
2
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Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
200
K/W
CHARACTERISTICS
T amb =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
2N5550
I E = 0; V CB = 100 V
-
100
nA
I E = 0; V CB = 100 V; T amb = 100 ° C
-
100
m A
collector cut-off current
2N5551
I E = 0; V CB = 120 V
-
50
nA
I E = 0; V CB = 120 V; T amb = 100
°
C
-
50
m
A
I EBO
emitter cut-off current
I C = 0; V EB =4V
-
50
nA
h FE
DC current gain
I C = 1 mA; V CE = 5 V; see Fig.2
2N5550
60
-
2N5551
80
-
DC current gain
I C = 10 mA; V CE = 5 V; see Fig.2
2N5550
60
250
2N5551
80
250
DC current gain
I C = 50 mA; V CE = 5 V; see Fig.2
2N5550
20
-
2N5551
30
-
V CEsat
collector-emitter saturation voltage I C = 10 mA; I B =1mA
-
150
mV
collector-emitter saturation voltage I C = 50 mA; I B =5mA
2N5550
-
250
mV
2N5551
-
200
mV
V BEsat
base-emitter saturation voltage
I C = 10 mA; I B =1mA
-
1
V
I C = 50 mA; I B =5mA
-
1
V
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
6
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
30
pF
f T
transition frequency
I C = 10 mA; V CE = 10 V; f = 100 MHz 100
300
MHz
F
noise figure
I C = 200
m
A; V CE =5V; R S =2k
W
;
f = 10 Hz to 15.7 kHz
2N5550
-
10
dB
2N5551
-
8
dB
1999 Apr 23
3
°
214194628.029.png 214194628.030.png
Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
MGD814
160
handbook, full pagewidth
h FE
120
V CE = 5 V
80
40
10 - 1
1
10
10 2
10 3
I C mA
Fig.2 DC current gain; typical values.
1999 Apr 23
4
0
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Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1999 Apr 23
5
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