LM113.PDF

December 1994

LM113/LM313 Reference Diode

General Description

The LM113/LM313 are temperature compensated, low volt-

age reference diodes. They feature extremely-tight regula-

tion over a wide range of operating currents in addition to an

unusually-low breakdown voltage and good temperature

stability.

The diodes are synthesized using transistors and resistors

in a monolithic integrated circuit. As such, they have the

same low noise and long term stability as modern IC op

amps. Further, output voltage of the reference depends only

on highly-predictable properties of components in the IC; so

they can be manufactured and supplied to tight tolerances.

Y Dynamic impedance of 0.3 X from 500 m Ato20mA

Y Temperature stability typically 1% over b 55 § Cto125 § C

range (LM113), 0 § Cto70 § C (LM313)

Y Tight tolerance: g 5%, g 2% or g 1%

The characteristics of this reference recommend it for use in

bias-regulation circuitry, in low-voltage power supplies or in

battery powered equipment. The fact that the breakdown

voltage is equal to a physical property of siliconÐthe ener-

gy-band gap voltageÐmakes it useful for many tempera-

ture-compensation and temperature-measurement func-

tions.

Features

Y Low breakdown voltage: 1.220V

Schematic and Connection Diagrams

Metal Can Package

Order Number

LM113H, LM113H/883,

LM113-1H, LM113-1H/883,

LM113-2H, LM113-2H/883,

or LM313H

See NS Package Number H02A

TL/H/5713±1

Typical Applications

Low Voltage Regulator

Level Detector for Photodiode

Solid tantalum.

TL/H/5713±2

C 1995 National Semiconductor Corporation

TL/H/5713

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

(Note 3)

Power Dissipation (Note 1)

Storage Temperature Range

b 65 § Cto a 150 § C

Lead Temperature

(Soldering, 10 seconds)

300 § C

100 mW

Operating Temperature Range

LM113

b 55 § Cto a 125 § C

Reverse Current

50 mA

LM313

0 § Cto a 70 § C

Forward Current

50 mA

Electrical Characteristics (Note 2)

Parameter

Conditions

Min

Typ

Max

Units

Reverse Breakdown Voltage

LM113/LM313

I R e 1mA

1.160

1.220

1.280

LM113-1

1.210

1.22

1.232

LM113-2

1.195

1.22

1.245

Reverse Breakdown Voltage

0.5 mA s I R s 20 mA

6.0

Change

Reverse Dynamic Impedance

I R e 1 mA

0.2

1.0

I R e 10 mA

0.25

0.8

Forward Voltage Drop

I F e 1.0 mA

0.67

1.0

RMS Noise Voltage

10 Hz s f s 10 kHz

m V

I R e 1mA

Reverse Breakdown Voltage

0.5 mA s I R s 10 mA

Change with Current

T MIN s T A s T MAX

Breakdown Voltage Temperature

1.0 mA s I R s 10 mA

0.01

%/ § C

Coefficient T MIN s T A s T MAX

Note 1: For operating at elevated temperatures, the device must be derated based on a 150 § C maximum junction and a thermal resistance of 80 § C/W junction to

case or 440 § C/W junction to ambient.

Note 2: These specifications apply for T A e 25 § C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4

inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 m F, unless isolated by at

least a 100 X resistor, as it may oscillate at some currents.

Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.

Typical Performance Characteristics

Temperature Drift

Reverse Dynamic Impedance Reverse Characteristics

TL/H/5713±3

Typical Performance Characteristics (Continued)

Reverse Characteristics

Reverse Dynamic Impedance Noise Voltage

Forward Characteristics

Response Time

Maximum Shunt Capacitance

TL/H/5713±4

Typical Applications (Continued)

Amplifier Biasing for Constant Gain with Temperature

Constant Current Source

Thermometer

*Adjust for 0V at 0 § C

Adjust for 100 mV/ § C

TL/H/5713±5

Physical Dimensions inches (millimeters)

Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883,

LM113-2H, LM113-2H/883 or LM313H

NS Package Number H02A

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

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support device or system whose failure to perform can

into the body, or (b) support or sustain life, and whose

be reasonably expected to cause the failure of the life

failure to perform, when properly used in accordance

support device or system, or to affect its safety or

with instructions for use provided in the labeling, can

effectiveness.

be reasonably expected to result in a significant injury

to the user.

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Corporation

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